• Korean Journal of Soil Science and Fertilizer
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• v.19 no.2
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• pp.89-97
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• 1986

To clarify the soil characteristics and genesis of the clayey terrace soils in Yeongnam area, the study were carried out with 9 typifying pedons of toposequential terrace soils in Yeongcheon (inland area) and Yeongil (coastal area) region. The results of soil genesis oriented investigations on soil mineralogical compositions and weathering characteristics were summarized as follows; 1. The contents of heavy minerals contained in sand fraction of the terrace soils were less than 5%, but the content in soil layers considered to be originated from other than terrace deposits had 9.8-16.2%. The content of feldspars in light minerals were higher in Yeongcheon sequence while the Yeongil sequence were characterized by having higher content in quartz. The ratios of quartz/feldspars in the soil layers where expecting lithological discontinuity, were different from that of terrace deposits. 2. The resistate index of maturity ranged around 76.7-29.9 in Yeongcheon area and around 85.6-67.2 in Yeongil area. The indices increased with the elevations of terraces. 3. The molar ratios of $SiO_2/Al_2O_3$ in clay fraction were around 1.93-2.65. The parent materials of the terrace deposits judged by the ratios of $Al_2O_3/TiO_2$ and $Fe_2O_3/Al_2O_3$ were considered to be the felsic materials. 4. The compositions of clay minerals detected by X-ray diffractogram and D.T.A. thermogram were dominated by kaolin and illite with subsidiary minerals of vermiculite, quartz, vermiculite intergrading to illite etc. It was distinguished from terrace deposits that by having higher amount of kaolin and montmorin minerals in the substrata of Bancheon soils in Yeongcheon area and Upyeong soils in Yeongil area, respectively.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Journal of Conservation Science
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• v.29 no.4
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• pp.367-378
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• 2013

Microstructures and nonmetallic inclusions of five forged iron axes and one cast iron axe were analyzed. The axes were excavated from the Proto-Three Kingdom Period site located in Yangchon, Gimpo. The forging objects were made of almost pure iron and low carbon steel, and only one among five were quenched after its figuration. Malleable cast iron structures showing on the casting suggest that the decarbonized casting method were applied. According to the results of nonmetallic inclusion analysis, the axes were produced by hammering the iron bloom which was attained with low-temperature -solid-reduction-method. Showing higher Fe content over $SiO_2$, it is assumed that the re-collecting rate of Fe was low because of the insufficient forging temperature and the impurities were included during the smelting process. It is assumed that the lime was used as a preparation because of detecting high Ca contents.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.1-7
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• 2008

We studied a growth behavior of Intermetallic compounds(IMCs) during solder bumping with two reflow methods. Ti(50 nm), Cu($1{\mu}m$), Au(50 nm) and Ti(50 nm) thin films were deposited on $SiO_2$/Si wafer using the DC magnetron sputtering system as the under bump metallization(UBM). And the $5{\mu}m$ thick Cu bumps and $20{\mu}m$ thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• Journal of Welding and Joining
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• v.16 no.2
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• pp.93-99
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• 1998

The effects of welding conditions of gas metal arc welding on the elements loss of solid wire, oxygen content and impact toughness of weld metals were studied. Deoxidizing elements loss was increased with increase of arc voltage in both short-circuit transfer mode and globular transfer mode. It is believed that increase of arc voltage results in increase of reaction time between elements in the droplet and surrounding gas at the end of wire and in the arc column. Based on the thermodynamic equilibrium model, the oxygen content of weld metal can be predicted with the content of silicon and manganese as following : [%O] = $K([%Si][%Mn])^{-0.25}$, K = -15518/T+6.01. The equilibrium temperature was dependent on shielding gas, and it was 187$0^{\circ}C$ for $CO_2$ gas and 180$0^{\circ}C$ for 20%$CO_2$-80%Ar gas. The oxygen content of weld metal which shows maximum impact toughness was varied with deoxidizing alloy system of wires, 0.041 wt% for Si-Mn type wire and 0.026 wt% for Si-Mn-Ti type wire.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.863-869
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• 2004

The purpose of this research is to investigate the mechanical property and ductile-brittle transition temperature of Ti-Nb-P added extra low carbon interstitial free steel having a tensile strength of 440 MPa. The mechanical property and transition temperature of hot rolled steel sheets were more influenced by the coiling temperature rather than by the small amount of alloying element. Further, at the same composition, the property of the specimen coiled at low temperature was superior to that obtained at higher coiling temperature. The fracture surface of 0.005C-0.2Si-1.43Mn steel coiled at $630^{\circ}C$ showed a ductile fracture mode at $-100^{\circ}C$, but coiling at $670^{\circ}C$ showed a transgranular brittle fracture mode at $-90^{\circ}C$. The galvannealed 0.006C-0.07Si-1.33Mn steel sheet annealed at $810^{\circ}C$ has tensile strength and elongation of 442.8 MPa and $36.6\%$, respectively. The transition temperature of galvannealed 0.006C-0.07Si-1.33Mn steel sheet was increased with a drawing ratio, and the transition temperature of the galvannealed 0.006C-0.07Si-1.33Mn steel was $-60^{\circ}C$ at a drawing ratio of 1.8

• Journal of Surface Science and Engineering
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• v.41 no.3
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• pp.83-87
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• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Journal of the Korean Solar Energy Society
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• v.22 no.4
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• pp.44-50
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• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.