• Title/Summary/Keyword: $TiO_2/TiOF_2$

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The Effect of $PtCl_4$ Concentration on Dye-Sensitized Solar Cell Efficiency ($PtCl_4$ 농도에 따른 염료감응형 태양전지의 효율 변화)

  • Seo, Hyun-Seung;Park, Mi-Ju;Choi, Eun-Chang;Lee, Sung-Uk;Kim, Hyung-Jin;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.435-436
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    • 2008
  • Dye-sensitized Solar Cells(DSSCs) which convert incident sun light into electricity were expected to overcome global warming and depletion of fossil fuels. And it is one of study that is lately getting into the spotlight because manufacturing method is more simple and inexpensive than existing silicon solar cells. In this respect, DSSCs are in the limelight as the next generation solar cells. DSSCs are generally composed of a dye-modified $TiO_2$ photoelectrode, a Pt counter electrode, and an electrolytes containing a redox couple$(I^-/I_3^-)$. Among these elements, pt electrode were prepared by applying electric potential to FTO substrate in the $H_2PtCl_6$ solution. In this study, we report the solar cell efficiency depending on $PtCl_4$ concentration change. $PtCl_4$ concentration was 1mM, 5mM, 10mM, and 20mM, and adhered on FTO glass substrate by sintering process. When applied each $PtCl_4$ counter electrode on DSSC, the best efficiency was found at 10mM of $PtCl_4$ concentration. The catalyst promotes the movement of electron from the counter electrode to the electrolyte the higher the molarity, the better the efficiency. However, in case of 20mM, it is estimated that over-deposited $PtCl_4$ tends to restrict the movement of electron due to its bundle formation.

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Planar Type Flexible Piezoelectric Thin Film Energy Harvester Using Laser Lift-off

  • Noh, Myoung-Sub;Kang, Min-Gyu;Yoon, Seok Jin;Kang, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.489.2-489.2
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    • 2014
  • The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

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Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

  • Kim, Min-Chul;Choi, Ji-Won;Kang, Chong-Yun;Yoon, Seok-Jin;Kim, Hyun-Jai;Yoon, Ki-Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.14-17
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    • 2002
  • The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

PZT thin capacitor characteristics of the using Pt-Ir($Pt_{80}Ir_{20}$)-alloy (Pt-Ir($Pt_{80}Ir_{20}$)-alloy를 이용한 PZT 박막 캐패시터 특성)

  • Jang, Yong-Un;Chang, Jin-Min;Lee, Hyung-Seok;Lee, Sang-Hyun;Moon, Byung-Moo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.47-52
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    • 2002
  • A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

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The Mineralogical and Geochemical Study on Korean Scheelites and its Application to the Ore Prospecting (한국산 灰重石鑛의 광물학적, 지화학적 연구 및 그의 探査에의 이용)

  • So, Chil-Sup;Park, Maeng-Eon
    • Economic and Environmental Geology
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    • v.12 no.2
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    • pp.79-93
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    • 1979
  • Twenty five samples of the scheelite-powellite series from twelve Korean tungsten deposits of various geologic settings were studied mineralogically and geochemically. Variations in the trace-element contents of the scheelite minerals are considered in relation to geologic settings and mineralogic properties. Scheelites from ore deposits developed in similar geologic settings and under similar physicochemical conditions are characterized by specific combinations of trace elements.

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Development of Textured 0.37PMN-0.29PIN-0.34PT Ceramics-Based Multilayered Actuator for Cost-Effective Replacement of Single Crystal-Based Actuators

  • Temesgen Tadeyos Zate;Jeong-Woo Sun;Nu-Ri Ko;Bo-Kun Koo;Hye-Lim Yu;Min-Soo Kim;Woo-Jin Choi;Soon-Jong Jeong;Jae-Ho Jeon;Wook Jo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.362-368
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    • 2023
  • Multilayered actuators using Pb(Mg1/3Nb2/3)O3-Pb(In1/2Nb1/2)O3-PbTiO3 (PMN-PIN-PT) crystals have demonstrated excellent properties, but are costly and lack mechanical strength. Textured PMN-PIN-PT ceramics exhibit robust mechanical strength and comparable properties to their single crystals form. However, the development of multilayered actuators using textured PMN-PIN-PT ceramics has not been achieved until now. This study presents the development of a multilayered actuator using textured 0.37PMN-0.29PIN-0.34PT ceramics with an Ag0.9/Pd0.1 inner electrode, co-fired at 950℃. A random 0.37PMN-0.29PIN-0.34PT ceramics multilayered actuator was also developed for comparison. The multilayered actuator consisted of 9 ceramic layers (36 ㎛ thickness) with an overall actuator thickness of 0.401 mm. The textured and random 0.37PMN-0.29PIN-0.34PT ceramics-based multilayered actuators achieved displacements of 0.61 ㎛ (0.15% strain) and 0.23 ㎛ (0.057% strain) at a low applied peak voltage of 100 V. These results suggest that the developed multilayered actuator using high-performance textured 0.37PMN-0.29PIN-0.34PT ceramics has the potential to replace expensive single crystal-based actuators cost-effectively.

Measurement of sonoluminescence intensity for evaluation of the amount of radical generated by ultrasonic cavitation (초음파 캐비테이션에 의해 생성되는 라디칼의 발생량 평가를 위한 소노루미네센스 발광강도의 측정)

  • Jungsoon Kim;Moojoon Kim
    • The Journal of the Acoustical Society of Korea
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    • v.42 no.1
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    • pp.50-56
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    • 2023
  • The hydroxyl radical (·OH) and superoxide anion radical (·O2- ) generated by the shock wave generated during ultrasonic cavitation collapse in TiO2 suspension are highly useful because they can sterilize and disinfect. For practical use as a sterilization method without any chemicals, in this study, we proposed a method for evaluating the generation of radicals generated by high-intensity ultrasound emitted to titanium dioxide suspension. In the proposed method, the sonoluminescence phenomenon, which emits light by ultrasonic cavitation decay energy, was utilized, and the degree of radical generation was evaluated through the amount of light energy by sonoluminescence. As a result, even at a low concentration of titanium dioxide of 0.02 wt%, light energy 5 times higher than in the absence of titanium dioxide was received. After that, as the concentration increased by 0.1 wt%, the luminous intensity of sonoluminescence increased linearly by about 14.8 × 10-12 lm. Therefore, it was confirmed that the radicals generated by radiating high-intensity ultrasound to the titanium dioxide suspension increased linearly as the concentration of titanium dioxide increased within a given concentration range.

그린에너지 소재로서의 에어로젤 나노기공하이브리드 복합소재개발

  • Kim, Chang-Yeol;Jang, A-Reum;Kim, Jong-Hui
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.13.1-13.1
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    • 2009
  • 에어로젤은 인류가 개발한 소재 중에서 가장 가벼운 고체로, 기공률이 90%이상이고 비표면적은 ~1000m2/g, 기공의 크기는 10nm 크기로 이루어진 나노기공 물질이다. 1931년에 Kisley가 물유리로부터 실리카 에어로젤을 합성한 이래로 실리카 에어로젤에 대한 연구가 가장 많이 이루어져왔으며, 단열소재, 흡음재, 체렌코프우주선 디텍터, 반도체의 초저유전소재, 유출된 석유의 정제, 촉매 등에 대한 응용에 대해서도 연구가 많이 이루어져 왔다. 그리고TiO2와 같은 광촉매 에어로젤 소재, 카본 에어로젤 소재등 다양한 나노기공 소재에 대해서도 연구가 이루어지고 있으며, 카본 에어로젤의 경우 나노기공과 비표면적을이용한 전기이중층 커패시터 (EDLC)에 대한 연구도 이루어지고 이다. 본 연구에서는 첫째로, 실리카 에어로젤에 대한 연구결과를 소개하고 이의 단열소재로서의 응용가능성에대하여 언급하고자 한다. 실리카 에어로젤 나노기공 소재의 경우, 기공크기가 10nm크기로 매우 작고 공기의 자유이동길이와 거의 비슷하여서 대류에 의한 열전달을 낮출 수 있으며, 낮은 고체함량으로 인하여 포논에 의한 열전달을 낮출 수 있기 때문에 단열소재로서 최고의 성능을 나타낸다. 하지만, 문제는 높은 기공률로 인한 기계적인 취약성이 문제이다. 따라서 이를 보완하기 위항 섬유로 에어로젤을 보강할 수 있는데, 이를통하여 에어로젤 나노기공소재와 섬유보강에 의한 복합화에 대하여 말하고자 한다. 또 다른 하나의 연구방법은유기-무기 하이브리드 나노기공 소재를 합성하는 것이다. 여기서는하나의 방법으로 MTEOS-TEOS의 하이브리드화와 초임계 건조공정에 의한 나노기공 소재에 대한 연구결과를소개하고자 한다. 마지막으로 카본 에어로젤 나노기공소재의 합성과 나노기공 구조의 제어 및 물성평가에 대한 것을 말하고자하는데, 본 발표에서는 레소시놀과 포름알데히드를 촉매에 의한 중합반응을 통하여 유기 에어로젤 소재를 합성하고 분위기에서탄소화 공정을 통하여 카본에어로젤을 합성하였다. 또한 금속 니켈을 도입하는 것에 의하여 탄소/니켈 복합 하이브리드 에어로젤 소재를 합성하고 슈퍼커패시터 전기화학 특성에 대한 연구결과를 발표하고자 한다.

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Recirculating Integrated System for the Treatment of Authentic Integrated-textile-dyeing Wastewater from Dyeing Industrial Complex (염색산업단지 종합폐수처리용 재순환 통합시스템)

  • Lee, Eun Ju;Lim, Kwang-Hee
    • Korean Chemical Engineering Research
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    • v.55 no.6
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    • pp.837-845
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    • 2017
  • A recirculating integrated system composed of a fluidized biofilter filled with waste-tire crumb media fixed with return sludge from wastewater treatment facility of D dyeing industrial center, and a UV/photocatalytic reactor packed with calcined $TiO_2$ coated-glass beads as photocatalyst-support, was constructed and was run to treat authentic textile-dyeing wastewater from D-dyeing industrial center, which was mixed with an alkaline polyester-weight-reducing wastewater and a wastewater from sizing process. As a result, its total removal efficiency(RE(tot)) of $COD_{cr}$ and colors were ca. 81% and 55%, respectively. The synergy effect of the recirculating integrated system to enhance total removal efficiency(RE(tot)) of $COD_{cr}$ and colors were evaluated at most ca. 7% and 3%, respectively. The fluidized biofilter and the UV/photocatalytic reactor were responsible for ca. 94% and 6% of the total $COD_{cr}$ removal efficiency, respectively, and were also responsible for ca. 86% and 14% of the total color-removal efficiency, respectively. Thus, the degree of the UV/photocatalytic reactor-unit process's contribution to RE(tot) of color, was about 2.4 times of that to RE(tot) of $COD_{cr}$. Therefore, the UV/photocatalytic reactor facilitated the more effective elimination of colors by breaking down the chemical bonds oriented from colors of dyes such as azo-bond, than $COD_{cr}$. In addition, the effect of the removal efficiency of each unit process(i.e., the fluidized biofilter or the UV/photocatalytic reactor) of the recirculating integrated system on RE(tot) of $COD_{cr}$ and colors, was analysed by establishing its model equation with an analytic correlation.

Interface Control to get Higher Efficiency in a-Si:H Solar Cell

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.193-193
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    • 2012
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

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