• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.110-111
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• 2002

최근 Y. Masumoto[1]등에 의하여 Co가 도핑된 anatase 구조의 TiO$_2$ 물질에서 상온 강자성 현상이 보고된 이후, 이에 대한 관심이 고조되면서 다른 연구 그룹들에 의해 실험적으로 상온 강자성을 성공하였다는 보고[2,3]가 있으나 현재 그 메커니즘에 대하여 명확한 해석이 되어있지 않고 있기 때문에 이것이 정말 자성반도체의 성질인지 아니면 clustering에 의한 것인지 아직 확실히 밝혀져 있지는 않다. (중략)

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.141-146
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• 2009

PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.11-19
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• 1992

$SrTiO_3$powders were synthesized from the chloride and the nitrate aqueous solution by spray pyrolysis method using ultrasonic vibrator. The concentration of mother solution was prepared 0.05M and O.lM. The carrier gas flow rate was 0.5cm/sec and 1.5cm/sec, respectively. The formation processing was investigated in the 0.05M and 0.05cm/sec. The $SrTiO_3$powders could not be synthesized from chloride aqueous solution. The prepared powders from nitrate aqueous solution was SrTi03 with cubic structure and nearly sphere particle for all samples. Mean particle size was increased from $0.49{\mu}m$ to $0.67{\mu}m$ by changing the carrier gas flow rate from O.5cm/sec to 1.5cm/sec. Also, mean particle size increased from $0.49{\mu}m$to $0.55{\mu}m$by changing the concentration of mother solution from O.05M to O.1M. Atomizing droplet size was $14.3{\mu}m$. The shape of particles was very porous by evaporation of solvent at the initial step. But through the each step upwards, shape of particles was formed themselves into a nearly roundish.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.1050-1054
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• 1990

Rutile(TiO2) single crystals were grown by FZ method. Feed rod was sintered in the longitudinal tube-shaped furnace at 135$0^{\circ}C$ and optimum growth condition was growth rate 5-8mm/hr, rotation rate 30-40rpm. When crystal was growing, atomosphere was oxidized condition, and grown single crystal was annealed at 110$0^{\circ}C$. The rutile single crystals were oriented to [001] direction and color change of single crystals were related to atmosphere, and difference of electric conductivity and resistance was due to the fact above.

• Journal of Environmental Science International
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• v.28 no.1
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• pp.65-73
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• 2019

The catalytic activity of Ni-0.2%YSZ (Yttria-Stabilized Zirconia) with different promoters was evaluated for $CO_2$ methanation. The catalysts were weighed for mixing and they were dried at $110^{\circ}C$ for molding into disks. The concentration of $CO_2$ and $CH_4$ for conducting of $CO_2$ methanation were analyzed by gas chromatography and the physical characteristics of the disk-type catalyst formed were analyzed by X-ray diffraction, scanning electron microscope and energy dispersive x-ray spectrometer. The addition of $CeO_2$ as a promoter for Ni-0.2%YSZ (denoted as Ni-5%Ce-0.2%YSZ) resulted in the highest $CO_2$ methanation. It also showed catalytic activity at a low temperature($200^{\circ}C$). Following this, $ZrO_2$, $SiO_2$, $Al_2O_3$ and $TiO_2$ were added to Ni-5%Ce-0.2%YSZ to compare the $CO_2$ methanation, and the highest efficiency was found for. Ni-1%Ti-5%Ce-0.2%YSZ Then, the concentration of Ti was increased to 10% and the catalytic activity was estimated using seven different types of commercial $TiO_2$. In conclusion, ST-01 $TiO_2$ showed the highest efficiency for $CO_2$ methanation.

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.106-110
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• 2002

Gel-type polyacrylonitrile(PAN) polymer electrolytes have been prepared using ethylene carbonate(EC), propylene carbonate(PC) and dimethyl carbonate(DMC) plasticizer, $LiPF_6$ salt and $TiO_2$ ceramic filler. Electrochemical properties, such as electrochemical stability, ionic conductivity and compatibility with lithium metal and mechanical properly of polymer electrolytes were investigated. Charge/discharge performance of lithium secondary battery using these polymer electrolytes were investigated. The maximum load that the polymer electrolyte resists increased about two times as a result of adding $TiO_2$ in the polymer electrolyte containing EC and PC. Polymer electrolyte containing EC, PC and $TiO_2$ also showed ionic conductivity of $2\times10^{-3} S/cm$ at room temperature and electrochemical stability window up to 와 4.5V. Polymer electrolyte containing EC, PC, and $TiO_2$ showed the most stable interfacial resistance of $130\Omega$ during 20 days in the impedance spectra of the cells which were constructed by lithium metals as electrodes. Lithium metal secondary battery which employed $LiCoO_2$ cathode, lithium metal anode and $TiO_2$-dispersed polymer electrolyte showed $90\%$ of charge/discharge efficiency at the 1C rate of discharge.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.374-378
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• 2010

$MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.