• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.116.1-116
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• 2002

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• Journal of information and communication convergence engineering
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• 제4권4호
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• pp.147-150
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• 2006

The thin film of PbTiO3 is fabricated at substrate temperature of 100-150$^{\circ}C$. The infrared spectrum of the ferroelectric thin film is measured as temperature of thermal treatment, 400 - 550$^{\circ}C$. According to infrared spectrum analysis, there are absorption bands at a nearby wave number of 1000 $\sim$ 400 cm-l and the thin film treated by temperature of 550$^{\circ}C$ has absorption bands of wave number 500 cm-l similar to infrared response property of PbTiO3 powder. The pyroelectric infrared detector is fabricated after deposition of Pt and PbTiO3 thin film on Si wafer by sputtering machine. The measured remnant polarization are 11.5-12.5$\muC/cm2$, breakdown electric field Ec is 100-120KV/cm, and voltage responsivity and detectivity is -280V/W, -108cm Hz/W.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.23-23
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• 2001

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.265-271
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• 2003

Ferroelectric lanthanum-substituted Bi$_4$Ti$_3$O$_{12}$(BLT) thin films were fabricated by spin-coating onto a Pt/Ti/SiO$_2$/Si substrate by metalorganic decomposition technique. The grain size in BLT thin films were prepared with controlled by various drying process. The effect of grain size on the crystallization and ferroelectric properties were investigated by x-ray diffraction and field emission scanning electron microscope. The dependence of crystallization and electrical properties are related to the grain size in BLT thin films with different drying temperature. The remanent polarization of BLT thin film increases with the increasing grain size. The value of 2P$_{r}$ and E$_{c}$ of BLT thin film dried at 45$0^{\circ}C$ were 25.9 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm, respectively. The BLT thin film with larger grain size has better fatigue properties. The fatigue properties revealed that small grained film showed more degradation of switching charge than large grained films.lms.s.

• 공업화학
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• 제8권4호
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• pp.589-594
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• 1997

화학증착법을 통하여 $650^{\circ}C$의 증착온도와 0.0126Torr의 산소분압인 증착조건에서 원료물질로 $\beta$-diketonates 킬레이트 화합물을 사용하여 Si(111) 및 $SrTiO_3(100)$ 기판에 $YBa_2Cu_3O_y$ 고온 초전도 박막을 제조하였다. $SrTiO_3(100)$기판에서 제조된 박막의 $T_{c,onset}$과 $T_{c.0}$는 각각 91K와 87K로 나타났다. 또한, Si(111)기판에서 제조된 박막의 $T_{c,onset}$은 91K였지만 $T_{c.0}$는 액체질소 비등점(77.3K)에서는 보이지 않았다. $SrTiO_3(100)$에 증착된 초전도 박막은 치밀하고 2차원적으로 배열된 미세구조를 갖고 있는 반면, Si(111)에 증착된 초전도 박막은 상대적으로 기공이 많으며 무질서한 미세구조를 형성하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.154.1-154.1
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• 2000