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http://dx.doi.org/10.4313/JKEM.2003.16.4.265

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Various Drying Temperature for FRAM Applications  

김경태 (중앙대학교 전기전자공학부)
김동표 (중앙대학교 전기전자공학부)
김창일 (중앙대학교 전기전자공학부)
김태형 (여주대학 전기과)
강동희 (중앙대학교 화학과)
심일운 (중앙대학교 화학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.4, 2003 , pp. 265-271 More about this Journal
Abstract
Ferroelectric lanthanum-substituted Bi$_4$Ti$_3$O$_{12}$(BLT) thin films were fabricated by spin-coating onto a Pt/Ti/SiO$_2$/Si substrate by metalorganic decomposition technique. The grain size in BLT thin films were prepared with controlled by various drying process. The effect of grain size on the crystallization and ferroelectric properties were investigated by x-ray diffraction and field emission scanning electron microscope. The dependence of crystallization and electrical properties are related to the grain size in BLT thin films with different drying temperature. The remanent polarization of BLT thin film increases with the increasing grain size. The value of 2P$_{r}$ and E$_{c}$ of BLT thin film dried at 45$0^{\circ}C$ were 25.9 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm, respectively. The BLT thin film with larger grain size has better fatigue properties. The fatigue properties revealed that small grained film showed more degradation of switching charge than large grained films.lms.s.
Keywords
BLT; FRAM; Grain size; Ferroelectric; MOD;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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