• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.360-364
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• 2010

$Li_4Ti_5O_{12}$ thin film with inverse hemispheric structure was fabricated on a Pt/Ti/$SiO_2$/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at $400^{\circ}C$. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the $Li_4Ti_5O_{12}$ film with inverse hemispheric structure was superior to that of the flat $Li_4Ti_5O_{12}$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.373-376
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• 2012

Thin films of Ag-SiO2-TiO2 composite oxides with SiO2/TiO2 of 20/80 molar compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium isopropoxide (TIP) as precursors. Ag-SiO2-TiO2 films coated on commercial glass substrates have successfully been synthesized using sol-gel method. The Ag-SiO2-TiO2 film with 0.5% Ag-added concentration and 20 mol% SiO2-mixture gives optimal results on crystalline structure, optical property, surface area, and photochromic property. Absorption near the wavelength of the incident light decreased gradually. The reversibility of the two-photon writing process in Ag-SiO2-TiO2 film is clearly seen.

• Journal of Magnetics
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• v.21 no.2
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• pp.168-172
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• 2016

$BiMnO_3$ has been a promising candidate as a magnetoelectric multiferroic while there have been many controversial reports on its ferroelectricity. The detailed analysis of its film growth, especially the growth of thin film having monoclinic symmetry has not been reported. We studied the effect of miscut angle, the substrate surface, and film thickness on the symmetry of $BiMnO_3$ thin film. A flat $SrTiO_3$ (110) substrate resulted in a thin film with three domains of $BiMnO_3$ and 1 degree miscut in the $SrTiO_3$ (110) substrate resulted in dominant domain preference in the $BiMnO_3$ thin film. The larger miscut resulted in a nearly perfect detwinned $BiMnO_3$ film with a monoclinic phase. This strong power of domain selection due to the step edge of the substrate was efficient even for the thicker film which showed a rather relaxed growth behavior along the $SrTiO_3$ [1-10] direction.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.264-269
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• 2000

TiO$_2$thin films were prepared on the glass by a conventional spin coating method with $TiO_2$ sol(30wt%, anatase). The thickness of the thin films were controlled by the number of coating cycles: one cycle is composed of spin coating, drying, and heating process. The reaction rate of the film was obtained by the photodecomposition of gaseous benzene under 0.44 and 2.0mW/$\textrm{cm}^2$ UV light on the film surface. For an incident UV light intensity of 0.44mW/$\textrm{cm}^2$, the reaction rate was increased with the thickness of the film, caused by extent of surface area, but there was no change over the thickness of about 4$\mu\textrm{m}$. The porous $TiO_2$ thin film has comparatively vast effective surface area, which under relatively high-intensity UV illumination causes the reaction rate to be controlled by the film thickness.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.30-35
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• 2023

The glass bead surface was coated using a TiO₂ sol, after which dry-treated (TB) and calcined (TBc) samples were prepared. Photocatalytic degradation of methylene blue and toluene, as well as characterization of the TiO₂ thin films, were carried out. The TiO₂ thin film of the TB sample had the same shape as the sponge foam, according to FE-SEM, XPS, and FTIR analyses, and contained both amorphous and crystalline TiO₂. On the other hand, crystalline TiO₂ was mainly present in the TiO₂ thin film of the TBc sample, and needle-shaped particles and tiny ones were mixed. The adsorption capacity for methylene blue and the degradation rate of the TBc sample were less than 10 % compared with those of the TB sample, and the adsorption capacity and degradation rate of the TBc sample decreased similarly as the amount of TiO₂ coating increased. The amount of toluene adsorption for the TBc sample (46 mg/g) was smaller than that of the TB sample with the same coating amount, but the degradation rate was similar. In the case of the TB sample, the degradation rate for toluene decreased less than the adsorption capacity as the amount of TiO₂ coating increased. This result is considered to be because, in the non-calcined TB sample, the active site reduction of the crystalline particles occurred less and the specific surface area of the amorphous texture decreased as the amount of TiO₂ coating increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.93-93
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• 2002

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.129-133
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with TiO$_2$ underlayer. Ba-ferrite thin films with TiO$_2$ underlayer were deposited by reactive RF/DC magnetron sputtering system at room temperature. TiO$_2$ underlayer was reactive sputtered with $O_2$. After deposition, the thin films were annealed at vatious temperatures to get the crystallized sample. Underlayer was used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by TiO$_2$ underlayer. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with TiO$_2$ underlayer can be used as longitudinal recording media.