• 전자공학회논문지D
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• 제35D권7호
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• pp.109-116
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• 1998

In this work was produced and analyzed a z-cut Ti:LiNbO$_{3}$ optical waveguide which applies for various optical devices.A waveguide channel with a thickness 8 .mu.m and a length 66,000.mu.m and a mach-zehnder interferometer type waveguide were fabricated at a diffusion temperature 1050.deg. C for 6-8hours in a wet $O_{2}$ environment. The resulting Ti:LiNbO$_{3}$ optical waveguide was measured to have a Ti-strip thickness of 950.angs. and low loss. Surfaces and cross-sections of a fabricated waveguide were analysed. The mode pattern anaysis revealed that the waveguide showed a single mode at a 1550nm wavelength. The effective dimension of the waveguide was calculated by measuring a gaussian profile; Wx=10.95.mu. and Wy=9.14.mu.m. a propagation loss, of 0.50dB/cm for a TM mode and 0.45dB/cm for a TE mode, was low enough to be accepatable for optical devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.121-124
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• 1999

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.194-196
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• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• 한국표면공학회지
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• 제30권5호
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• pp.320-332
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• 1997

The development of colored surface on zinc coating by the oxidation of a melten alloy of zinc with a minor amount of oxygen-avid additive such as tianium has been studied. Using a galvanizing Zinc alloy containing 0.1 to 0.3wt%Ti, gold, purple or blue color was developed clearly and stably, depending upon the extent of oxidation, by air cooling after hot dipping in a bath at temperature of $550^{\circ}C$ to $600^{\circ}C$. The source of the color is light interference with surface oxide layer. THe final color depends on the thickness of the color depends on the thickness of $TiO_2$, played So compositing, temperature and time at elevated temperature after are all controlling variables. Since oxidation film such as $TiO_2$ played role of passivation film, the corrosion resistance in a colored galvanized steel sheet. It is also thought that surface oxide layer of $TiO_2$ inhibited dissolution of the coating layer.

• 한국세라믹학회지
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• 제40권9호
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• pp.902-908
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• 2003

Au/TiO$_2$ core-shell 구조 나노 미립자가 졸-겔법에 의해서 제조되었고, TiO$_2$ shell의 형상과 결정성이 TEM과 UV-Vis. absorption spectrometer에 의해서 조사되었다. Au/TiO$_2$ core-shell 나노 미립자는 Au 콜로이드 에탄올 수용액 중에서 TOAA(Titanium Oxide Acethylacetonate)의 가수분해에 의해 합성될 수 있었다. Au 나노 미립자의 표면에 형성된 TiO$_2$ shell의 두께는 약 1 nm이었다. TiO$_2$ shell의 결정성을 조사하기 위하여. TiO$_2$가 피복된 Au 콜로이드 에탄올 용액에 254 nm의 자외선과 $^{60}$Co의 방사선을 조사하였다. Au 나노 미립자의 surface plasmon 현상은 방사선이 조사되었을 때만 나타났고, 이 결과로부터 TiO$_2$ shell은 비정질 상태임을 알 수 있었으며, Au의 분산성 향상을 위해 표면에 처리된 MUA(Mercaptoundecanoic Acid)층은 전자의 이동을 방해하는 장애물로 작용하지 않음을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.292-293
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• 2007

In the study, in order to develop low temperature sintering ceramics for multilayer piezoelectric transformer, $(Pb,Ca,Sr)Ti(Mn,Sb)O_3$ ceramics were fabricated using $Na_2CO_3$, $Li_2CO_3$, $MnO_2$ and $Bi_2O_3$ as sintering aids and their dielectric and piezoelectric properties were investigated according to the amount of $Bi_2O_3$ addition. At the sintering temperature of $900^{\circ}C$, density, thickness vibration mode electromechanical coupling factor ($k_t$), thickness vibration mode mechanical quality factor ($Q_{mt}$) and dielecteic constant (${\varepsilon}_r$) showed the optimum value of $6.94[g/cm^3]$, 0.497, 3,162 and 209, respectively, for multilayer piezoelectric transformer application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.448-449
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• 2006

For the possible applicative pearl pigment, multi-layered $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ thin film was deposited on glass substrate by using sputtering method. $TiO_2$ and Al or Cr was selected as a possible high and low refraction materials at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ layers show the wavelength range of 430 - 760nm, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well matched with the experimental one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.