• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.771-775
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• 2007

In this study, in order to develop low temperature sintering ceramics for thickness vibration mode multilayer piezoelectric transformer, $PbTiO_3$ system ceramics were fabricated using $Na_2CO_3,\;Li_2CO_3,\;MnO_2\;and\;Bi_2O_3$ as sintering aids and their dielectric and piezoeletric properties were investigated according to the amount of $Bi_2O_3$ addition. At the sintering temperature of $900^{\circ}C\;and\;Bi_2O_3$ addition of 0.1 wt%, density, grain size, thickness vibration mode eletromechanical coupling factor($k_t$), thickness vibration mode mechanical quality factor($Q_{mt}$) and dielecteic constant(${\varepsilon}_r$) showed the optimum value of $6.94g/cm^3,\;2.413{\mu}m$, 0.497, 3,162 and 209, respectively, for thickness vibration mode multilayer piezoelectric transformer application.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.2
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• Journal of the Korean Professional Engineers Association
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• v.21 no.1
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• pp.5-12
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• 1988

The purpose of this paper is to investigate on the optimum coating thickness layer of TiC-Al$_2$O$_3$ coated cemented carbide tool. Chemical Vapor Deposition (CVD) of a thick film of TiC-A1$_2$O$_3$ on a cemented carbide produces an intermediate layer, $1.5mutextrm{m}$, 4.5${\mu}{\textrm}{m}$, 7.5${\mu}{\textrm}{m}$ 10.5${\mu}{\textrm}{m}$, 4 kind of TiC between the substrate and the $1.5mutextrm{m}$ constant thick A1$_2$O$_3$ coating. Experiments were carried out with the test relationship between coating thickness and shear angle, surface roughness, cutting force, microphotograph of crater wear, flank wear, tool life. From the experimental results, it was found that the optimum coating thickness of TiC-A1$_2$O$_3$ is 6${\mu}{\textrm}{m}$. Although the coating thickness layer 9${\mu}{\textrm}{m}$. 12${\mu}{\textrm}{m}$ have a much loger tool wear than an 3${\mu}{\textrm}{m}$, 6${\mu}{\textrm}{m}$ coating tool in cutting condition feed 0.05mm/rev, and the condition of feed 0.2mm/rev, 0.3mm/rev has upon in the shot time phenomenon of chipping.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.9
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• pp.1233-1238
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• 2014

In this thesis, it is investigated the characteristics of Dye Sensitized Solar Cell (DSSC) according to variation of $TiO_2$ thickness (6, 12, 18, and $24{\mu}m$) and three distinct $TiO_2$ sintering temperatures (350, 450 and $550^{\circ}C$) by XRD, SEM, I-V and UV-Vis spectrophotometer. According to sintering temperature, $TiO_2$ was transformed into the anatase structure at $350^{\circ}C$, rutile structure at $550^{\circ}C$ and further into the two structure at $450^{\circ}C$. With increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$, respectively, the irradiance rate increased in the range of 9~26 percent and 2.80~5.10 percent. Whereas a further increase to $24{\mu}m$ and $550^{\circ}C$, the irradiance rate decrease in the range of 4~11 percent and 30~47 percent. The conversion efficiency increased in the range of 2.80~5.01 and 3.03~5.01 with increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$. By contrast, increase to $24{\mu}m$ and $550^{\circ}C$, the conversion efficiency decreased in the range of 3.31~5.01 and 2.80~3.89, respectively. The DSSC that thickness of $TiO_2$ were $18{\mu}m$ and sintered at $450^{\circ}C$ exhibited the most excellent characteristics, in which open-circuit voltage, short-circuit current, Fill Factor and conversion efficiency are 0.69 V, $11.4mA/cm^2$, 0.64 and 5.01%, respectively.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.264-269
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• 2000

TiO$_2$thin films were prepared on the glass by a conventional spin coating method with $TiO_2$ sol(30wt%, anatase). The thickness of the thin films were controlled by the number of coating cycles: one cycle is composed of spin coating, drying, and heating process. The reaction rate of the film was obtained by the photodecomposition of gaseous benzene under 0.44 and 2.0mW/$\textrm{cm}^2$ UV light on the film surface. For an incident UV light intensity of 0.44mW/$\textrm{cm}^2$, the reaction rate was increased with the thickness of the film, caused by extent of surface area, but there was no change over the thickness of about 4$\mu\textrm{m}$. The porous $TiO_2$ thin film has comparatively vast effective surface area, which under relatively high-intensity UV illumination causes the reaction rate to be controlled by the film thickness.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.242-248
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• 1996

The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.746-752
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• 2014

Photo electrode is an important component of DSSC, so this paper did some research on it. Through the method of adding PEG additive into $TiO_2$ paste, the electrical characteristics and efficiencies of DSSCs with photo electrode surface area were studied. In the case of not adding PEG in $TiO_2$ paste, $26{\mu}m$ thickness $TiO_2$ photo electrode shows 5.081% efficiency. The highest short circuit current density was $10.476mA/cm2^$. The structure of porous $TiO_2$ film can be controlled through changing the PEG additive amount in $TiO_2$ paste and the molecular weight of PEG. When the additive amount of PEG 20,000 in $TiO_2$ paste reaches 5%, the peak efficiency with $26{\mu}m$ thickness $TiO_2$ photo electrode was 5.387% and its highest current density were $11.084mA/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.684-688
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• 2001

The structural, piezoelectric and dynamic range characteristics of modified PbTi $O_3$ceramics were investigated as a function of Mn $O_2$addition. With the increase of Mn $O_2$addition, Curie temperature was decreased. As the increase of Mn $O_2$addition, mechanical quality factor ( $Q_{mt3}$) in the third over tone thickness mode was increased. Dynamic range in the third over tone thickness mode was also increased with the increase of Mn $O_2$addition. The composition ceramics added to 0.075wt% Mn $O_2$showed the best properties for SMD type resonator using third over tone thickness vibration in terms of high Curie temperature more than 31$0^{\circ}C$ and dynamic range of 49.38dB.B.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.