• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.288-291
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• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1260-1266
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• 1996

The effects of SiO2 MnO2 and sintering atmospheres (O2, N2) on the piezoelectric properties and densification behaviors of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 were investigated. The addition of SiO2 to the system enhanced the rate of densification but supressed the rate of grain growth. On the other hand the addition of MnO2 to the system did not nearly affect the rate of densification but increased slightly the rate of grain growth The densification of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 was promoted with increasing the partial pressure of O2. The relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 sintered under O2 atmosphere were higher than under N2 atmosphere. Whereas the mechanical quality factor (Qm) of specimens sintered under O2 atmosphere were lower than under N2 atmosphere. Thus the sintering atmosphere of O2 and N2 in Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 acted as donor and acceptor respectively. As the amount of SiO2 increased the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 but the mechanical quality factor (Qm) did not nearly change, In the case of the addition of MnO2 to the system the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 sintered under O2 atmosphere decreased rapidly with increasing the amount of MnO2 but they were unchanged with increasing the amount of MnO2 under N2 sintering atmosphere. Therefore the differences of the relative dielect-ric constant ($\varepsilon$r) and piezoelectric constant (d33) due to sintering atmosphere were diminished as the amount of MnO2 increased.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.460-464
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• 2003

Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.377-392
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• 2012

It has been known that small solid particles act as a stabilizer in pickering emulsion system. In this study, we successfully prepared stable pickering emulsion in n-hexylalcohol and water system with $TiO_2$ whose surface was treated by alkylsilane. The optimum condition to prepare pickering emulsion stabilized by $TiO_2$ particles was determined by amount of $TiO_2$ particles and ratio of water and oil phase. The type of pickering emulsion was dependent on wettability of particles for water and n-hexylalcohol. When the amount of $TiO_2$ particles increased up to 5.00 wt%, the stability of pickering emulsion was showed to be improved. The most stable pickering emulsion was prepared in the case of W/O type which has the ratio of oil and water phase (3 : 7). We tried to prepare porous $SiO_2-TiO_2$ composite pigments using a pickering emulsion as template at the optimal condition. Porous pigments were synthesized with Ludox HS-30 as an inorganic material by sol-gel process. The characteristics and shape of porous pigments were measured by optical microscope, SEM, BET, XRD and EDS.