• 한국분말재료학회지
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• 제26권4호
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• pp.282-289
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• 2019

Ti has received considerable attention for aerospace, vehicle, and semiconductor industry applications because of its acid-resistant nature, low density, and high mechanical strength. A common precursor used for preparing Ti materials is $TiCl_4$. To prepare high-purity $TiCl_4$, a process based on the removal of $VOCl_3$ has been widely applied. However, $VOCl_3$ removal by distillation and condensation is difficult because of the similar physical properties of $TiCl_4$ and $VOCl_3$. To circumvent this problem, in this study, we have developed a process for $VOCl_3$ removal using Cu powder and mineral oil as purifying agents. The effects of reaction time and temperature, and ratio of purifying agents on the $VOCl_3$ removal efficiency are investigated by chemical and structural measurements. Clear $TiCl_4$ is obtained after the removal of $VOCl_3$. Notably, complete removal of $VOCl_3$ is achieved with 2.0 wt% of mineral oil. Moreover, the refined $TiCl_4$ is used as a precursor for the synthesis of Ti powder. Ti powder is fabricated by a thermal reduction process at $1,100^{\circ}C$ using an $H_2-Ar$ gas mixture. The average size of the Ti powder particles is in the range of $1-3{\mu}m$.

• 대한화학회지
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• 제16권2호
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• pp.80-83
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• 1972

The activity change of lysozyme resulted from its exposure to $Ti-H_2O_2$system in aqueous liquid at room temperature and to ${\gamma}$-irradiation in ice at $195^{\circ}K$ has been measured at room temperature with a Cary-14 spectrophotometer. The enzymatic activity of lysozyme which had been added to a previously flow-mixed solution of $TiCl_3$ and $H_2O_2$ (System I) was compared with the activity of a lysozyme-$H_2O_2$ solution after flow-mixing with $TiCl_3$ (System II), considering the differences between these two activity changes as the extent of the enzymatic inactivation by the involvement of OH radical reaction. The fraction of lysozyme inactivated by OH radical in the system containing 0.0025 M $TiCl_3-0.1M$ $H_2O_2$ (ph 3.5) was 13%, When the $TiCl_3$ concentration is double (pH 3.0), the fraction of enzyme inactivated increases to 36%. The activity of the system containing 0.025 M $TiCl_3-0.1$ M $H_2O_2$ (pH 1.5) was essentially zero. The results seem to support the previos view that the production of OH radical should be proportional to $TiCl_3$ concentration when $H_2O_2$ is present in excess. Increase in the extent of inactivation found in system I with increasing $TiCl_3$ concentration may be due to a pH effect. $H_2O_2$ seems to be less effective than $TiCl_3$ in the inactivation. 1% lysozyme solution, when ${\gamma}$-irradiated with a total dose of 3M rads, loses about 20% of its activity. Lowering of temperature also was found to yield a reduction in enzymatic activity.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1051-1056
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• 2008

In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).

• 한국세라믹학회지
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• 제23권6호
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• pp.45-51
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• 1986

$SrTiO_3$ reaction mechanism formed from $TiCl_4$ and $SrCl_2$ solution by direct-wet-process was studied. Through this study it is identified that crystalline $SrTiO_3$ is formed above pH 13.8 amorphous $SrTiO_3$ above pH7 and crystallization temperature of amorphous $SrTiO_3$ is at 37$0^{\circ}C$. the final products are composed of 60% crystalline $SrTiO_3$ and 40% amorphous $SrTiO_3$ The amorphous $SrTiO_3$ is identified with the IR absorption spectrum of Sr-Ti-O by FT-IR spectrometer. Under pH 7 gelationus metatitanate (H2TiO3) is formed from TiCl4 but above pH7 the activity by the formation of metatitnic acid ion $[TiO_3]^{2-}$ is so high that $SrTiO_3$is formed more easily through the reaction with $Sr^{2+}$.

• 전자공학회논문지D
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• 제36D권4호
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• pp.56-62
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• 1999

본 연구에서, (Ba,Sr)TiO\sub 3\ 박막이 rf 전력, dc 바이어스 전압 및 반응로 압력과 같은 식각 공정 변수를 변화하여 ICP에서 Cl\sub 2\Ar 가스 혼합비에 따라 식각되었다. 0.2의 Cl\sub 2\/(Cl\sub 2\+Ar) 가스 혼합비, 600 W의 rf 전력,250 V의 dc 바이어스 전압 및 5 mTorr의 반응로 압력의 공정 조건하에서 식각율은 56nm/min이었다. 이때 Pt, SiO\sub 2\ 막에 대한 BST 박막의 식각 선택비는 각각 0.52, 0.43이었다. 식각된 BST 박막의 표면반응은 XPS로 분석하였다. Ba는 BaCl\sub 2\ 와 같은 화학적인 반응과 물리적인 스퍼터링에 의해 제거되었다. Sr의 제거는 Sr과 Cl의 화확적인 반응보다 Ar 이온 충격이 더 효과적이었다. Ti는 TiCl\sub 4\ 와 같은 화학반응에 의해 용이하게 제거되었다. XPS 분석 결과를 비교하기 위하여 SIMS의 분석을 수행하여 비교한 결과 동일한 결론을 도출하였다.

• Tribology and Lubricants
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• 제4권2호
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.718-722
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• 2011

In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.95-99
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• 2011

$(1-x)BaTiO_3+(x)Cd_5(PO_4)_3Cl$ ceramics were prepared by the conventional ceramic technique, i.e., solid state reaction at high temperature. The concentration of $Cd_5(PO_4)_3C$ was varied from 0.01 to 0.15 mole fraction. In order to study the phase transitions of our ceramics, the Raman scattering spectra were measured as functions of concentration x and temperature. It was found that the soluble limit of $Cd_5(PO_4)_3Cl$ in $BaTiO_3$ was the x=0.05 composition and $BaTiO_3$ phase disappeared above x=0.10. A new phase identified as $Ba_4Ti_3P_2O_{15}$ was detected in all samples of our compositions. The Curie temperature shifts up to $130^{\circ}C$ as the concentration x increases from zero to 0.05 and shift down to $95^{\circ}C$ as further increases to 0.08. For the increase of the Curie temperature, it is suggested that it can result from the inhibition of displacement of $Ti^{4+}$ in the distorted octahedron due to well dispersed $Ba_4Ti_3P_2O_{15}$ and $Cd_5(PO_4)_3Cl$ phase.

• Tribology and Lubricants
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• 제4권2호
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• 한국진공학회지
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• 제11권3호
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• pp.159-165
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• 2002

본 연구에서는 $TiCl_4$과 $NH_3$을 이용하여 atomic layer deposition(ALD)법으로 TiN막을 증착한 후, 그 막의 특성에 관하여 조사하였다. 최적 공정조건에서 TiN막의 성장률은 cycle당 두께가 약 0.6 $\AA$인 것으로 나타났고, 비저항은 반응온도 구간에서 200~350 $\mu\Omega$cm 수준으로 낮게 얻어졌다. XRD분석결과 TiN-ALD온도구간에서 TiN막이 결정화되었음을 알 수 있었다. AES 분석결과 Cl불순물의 함량이 거의 없는 상태(<1 at%)로 나타났고, TiN막에서의 Ti:N비가 1:1인 것으로 보아 거의 균일하게 형성되었음을 알 수 있었다. 또한 SEM관찰로 Aspect ratio 10:1의 trench 내에 형성된 TiN막의 스텝.커버리지는 극히 우수함을 알 수 있었다.