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http://dx.doi.org/10.4313/JKEM.2011.24.9.718

A Study of the Dry Etching Properties of TiN Thin Film in He/BCl3/Cl2 Inductively Coupled Plasma  

Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University)
Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University)
Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.9, 2011 , pp. 718-722 More about this Journal
Abstract
In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.
Keywords
TiN; Etch; $BCl_3$; He; ICP;
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