• Title/Summary/Keyword: $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN)

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Properties of $Sr_{0.7}Bi_{2.3}Nb_2O_9$ Thin film by RF Sputtering Method (RF 스퍼터링법에 의한 $Sr_{0.7}Bi_{2.3}Nb_2O_9$ 박막의 특성)

  • Kim, Jin-Sa;Choi, Young-Il;Kim, Hyung-Gon;Oh, Yong-Cheul;Kim, Ki-Joon;Kim, Sang-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.186-187
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. Thickness of SBN thin films was about 250[nm] in 70/30 of $Ar/O_2$ ratio. The thickness and deposition rate of SBN thin films were increased with increase of RF power. The capacitance of SBN thin films were increased with the increase of deposition temperature.

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Structural Properties of $Sr_{0.7}Bi_{2.3}Nb_2O_9$ Thin Film ($Sr_{0.7}Bi_{2.3}Nb_2O_9$ 박막의 구조적인 특성)

  • Kim, Jin-Sa;Choi, Yong-Il;Cho, Choon-Nam;Cho, Woon-Shick;Kim, Chung-Hyeok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.185-186
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    • 2008
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The rougness showed about 4.33[nm]. Deposition rate of SBN thin films was about 4.17[nm/min]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

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Structure and Influence of $Sr_{0.7}Bi_{2.3}Nb_2O_9$ Thin Film with $Ar/O_2$ Ratio ($Ar/O_2$비에 따른 $Sr_{0.7}Bi_{2.3}Nb_2O_9$ 박막의 구조 및 영향)

  • Kim, Jin-Sa;Choi, Woon-Shik
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.2
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    • pp.11-14
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

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Characteristics of the SrBi2Nb2O9 Thin Films Deposited by RF Magnetron Sputtering with Controlling of Bi Contents (RF마그네트론 스퍼터링 법에 의해 증착된 SrBi2Nb2O9 박막의 Bi 량의 조절에 따른 특성분석)

  • Lee, Jong-Han;Choi, Hoon-Sang;Sung, Hyun-Ju;Lim, Geun-Sik;Kwon, Young-Suk;Choi, In-Hoon;Son, Chang-Sik
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.962-966
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    • 2002
  • The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

열처리온도에 따른 SBN 세라믹 박막의 특성

  • Kim, Jin-Sa;Song, Min-Jong;Park, Geon-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.90-90
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode($Pt/Ti.SiO_2/Si$) using RF sputtering method. The dielectric constant of SBN thin films were increased with the increase of annealing temperature. The maximum dielectric constant of SBN thin film is obtained by annealing at 700[$^{\circ}C$]. The dielectric constant and dielectric loss had a stable value within -5~+5[V].

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Surface Morphology and Dielectric Properties of SBN Thin Film by RF Sputtering Method (RF 스퍼터링법에 의한 SBN 박막의 표면형상 및 유전특성)

  • Kim, Jin-Sa;Kim, Chung-Hyeok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.8
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    • pp.671-676
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

Polarization Characteristics of SBN Thin Film by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법에 의한 SBN 박막의 분극특성)

  • Kim, Jin-Sa
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.6
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    • pp.1175-1177
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    • 2011
  • The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

Microstructure and Properties of SBN Thin film with Deposition Temperature (증착온도에 따른 SBN 박막의 미세구조 및 특성)

  • Kim, Jin-Sa;Choi, Woon-Shik;Kim, Chung-Hyeok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.3
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    • pp.544-547
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_{2}O_{9}$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The optimum conditions of RF power and Ar/$O_2$ ratio were 60[W] and 70/30, respectively. Deposition rate of SBN thin films was about 4.17[nm/min]. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}400[^{\circ}C]$, the surface rougness showed about 4.33[nm]. The capacitance of SBN thin films were increased with the increase of deposition temperature.

AFM and C-F Properties of Ceramic Thin Film with Annealing Method (열처리 방법에 따른 세라믹 박막의 AFM 및 C-F 특성)

  • Choi, Woon-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.9
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    • pp.598-601
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    • 2015
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

Influence of Substrate Temperature of SBN Ceramic Thin Film (SBN 세라믹 박막의 기판온도에 따른 영향)

  • Kim, Jin-Sa;Oh, Yong-Cheul;Shin, Cheol-Gi;Kim, Eung-Kwon;So, Byeong-Mun;Song, Min-Jong;Kim, Chung-Hyeok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.213-214
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    • 2008
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The crystallinity of SBN thin films were increased with increase of substrate temperature in the temperature range of 100~400[$^{\circ}C$]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

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