• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1529-1534
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• 2018

We used in-situ synchrotron X-ray scattering to investigate phase transformations of octahedral tilted monoclinic $SrRuO_3$ (MSRO) and tetragonal SRO (TSRO) thin films on $SrTiO_3$ (STO) substrates. The octahedral tilted MSRO thin films were highly crystalline and the monoclinic distortion angle was $0.45^{\circ}$. The phase transition temperature from the MSRO to TSRO phase occurred at approximately $200^{\circ}C$ as a second order transition. Conversely, no phase transformations of the TSRO thin film occurred within the range from RT to $250^{\circ}C$. The octahedral $RuO_6$ rotation was strongly affected by the phase transformation in the SRO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.855-858
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• 2011

In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-$SrTiO_3$) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.

• 한국자기학회지
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• 제19권3호
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• pp.94-99
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• 2009

Pulsed Laser Deposition 방법으로 합성된 $La_{0.7}Ca_{0.3}MnO_3$ 박막의 물리적 특성을 증착 조건에 따라 조사하였다. 기존에 알려진 바와는 매우 달리 매우 낮은 산소 분압 ($1.0{\times}10^{-5}$, $1.0{\times}10^{-6}Torr$)에서도 큐리 온도가 높은 박막의 합성이 이루어졌으며 이는 박막의 합성 과정에서 쳄버 내부의 산소 분압보다는 플라즈마 plume의 모양과 그 내부 물질들의 운동에너지가 박막의 질을 결정하는 매우 중요한 요소임을 의미한다. 이러한 양질 박막의 합성 증착 조건을 이용하여 $La_{0.7}Ca_{0.3}MnO_3$ 을 Nb가 도핑된 $SrTiO_3$ 기판위에 증착함으로써 p-n 접합을 제작하였으며 이의 전류-전압곡선이 정류 특성을 보였고 그 모양은 자기장에 의해 바뀔 수 있음을 확인하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.296.2-296.2
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• 2008

• ETRI Journal
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• 제27권6호
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• pp.677-684
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• 2005

A phased array antenna was fabricated using four-element ferroelectric phase shifters with a coplanar waveguide (CPW) transmission line structure based on a $Ba_{0.6}Sr_{0.4}TiO_3(BST)/MgO$ structure. Epitaxial BST films were deposited on MgO (001) substrates by pulsed laser deposition. To attain the large differential phase shift and small losses for a ferroelectric CPW phase shifter, an impedance-matching-part adding technique between the effective transmission line and connecting cable was used. The return loss and insertion loss for this techniqueadapted BST CPW device were improved with respect to those for a normal BST CPW device. For an X-band phased array antenna system consisting of ferroelectric BST CPW phase shifters, power divider, dc block, patch antenna, and programmed dc power, the steering beam could be tilted by $15^{\circ}$ in either direction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.198-199
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• 2008

페로브스카이트 구조의 (Ba,Sr,Ca)$TiO_3$ 분말에 $Y_2O_3$ 불순물을 첨가하여 첨가량에 따른 영향을 연구하였다. 시편의 제작은 Screen-printing을 이용하여 후막으로 제작하였으며, 구조적인 특성과 함께 유전적 특성을 관찰하였다. XRD 회절 운석을 통하여 $Y_2O_3$ 가 첨가된 모든 시편에서 전형적인 페로브스카이트 구조를 나타내는것을 알 수 있었다. 시편의 미세구조를 관찰한 결과 grain size 는 $Y_2O_3$ 첨가량이 증가 할수록 감소하였으며, 기공은 증가하는 것을 알 수 있었다. 후막의 두께는 $Y_2O_3$ 첨가량에 영향을 받지 않았으며 평균 두께는 $60{\mu}m$이었다. 유전상수는 $Y_2O_3$ 첨가량에 따라 감소하였으며, 유전손실은 모든 시편에서 1%이하의 양호한 값을 나타내었다.

• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.10-12
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• 2003

NBCO thin films have been fabricated by magnetron sputtering technique on heated $SrTiO_3$ substrates. The oxidation and crystallization of the films were strongly dependent on the distance between the targets and the substrate, as well as on the oxygen partial pressure. The critical temperatures were above 80K for the films prepared under the condition of a small target to substrate gap, in spite of a very low oxygen pressure of 0.2Pa. The results suggest the importance of the activated oxygen uptake into the films during sputtering.