• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• 대한전자공학회논문지SD
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• 제37권11호
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ 박막은 ULSI-DRAM 즉 1-4 Gbit급 DRAM용 셀(cell) 커패시터의 새로운 유전물질로 각광받고 있다. 본 연구에서는 ICP 장비에서 $BCl_3/Cl_2/Ar$ 플라즈마로 (Ba,Sr)$TiO_3$ 박막을 식각하였다. 이때 RF power/dc bias voltage는 600W/-250V, 반응로의 압력은 10mTorr 이었다. $Cl_2/(Cl_2+Ar)$은 0.2로 고정하였고, $BCl_3$ 가스를 첨가하면서 (Ba,Sr)$TiO_3$ 박막을 식각하였다. $BCl_3$ 가스를 10% 첨가하였을 때, $480{\AA}/min$으로 (Ba,Sr)$TiO_3$ 박막은 가장 높은 식각 속도를 나타내었다. $Cl_2/Ar$가스에 $BCl_3$의 첨가 비에 따른 Cl, BCl 및 B의 라디칼 밀도를 optical emission spectroscopy(OES)에 의해 구하였다. $BCl_3$를 10% 첨가하였을 때 Cl의 라디칼 밀도가 가장 높았다. (Ba,Sr)$TiO_3$ 박막의 표면반응을 규명하기 위하여 XPS 분석을 수행한 결과 이온 bombardment 식각이 Ba-O 결합을 파괴하고 Ba와 Cl의 결합형태인 $BaCl_2$을 제거하기 위하여 필요하다. Sr과 Cl의 결합의 양은 많지 않고, Sr은 주로 물리적인 스퍼터링에 의하여 제거된다. Ti와 Cl은 화학적으로 반응하여 $TiCl_4$ 결합형태로 용이하게 제거된다. 식각후 단면사진을 SEM을 통해 본 결과 식각단면이 약 65~70$^{\circ}$ 정도였다.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• 한국세라믹학회지
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• 제43권7호
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• pp.421-426
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• 2006

[ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.

• 한국세라믹학회지
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• 제30권6호
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• pp.441-448
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• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• 한국세라믹학회지
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• 제32권4호
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.201-204
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• 2009

$BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• 한국세라믹학회지
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• 제35권8호
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• pp.791-794
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• 1998