• 제목/요약/키워드: $Spin^c$-structure

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Hot Wall Epitaxy(HWE) 방법에 의해 성장된 $CuInS_2$ (Growth and Characterization of $CuInS_2$ Single Crystal Thin Film by Hot Wall Epitaxy)

  • 최승평;홍광준
    • 한국결정학회지
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    • 제11권3호
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    • pp.137-146
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    • 2000
  • The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

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Mechanical Properties of Ultra-High Molecular Weight Polyethylene Irradiated with Gamma Rays

  • Lee, Choon-Soo;Yoo, Seung-Hoo;Jho, Jae-Young;Park, Kuiwon;Hwang, Tae-Won
    • Macromolecular Research
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    • 제12권1호
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    • pp.112-118
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    • 2004
  • With the goal of enhancing the creep resistance of ultra-high molecular weight polyethylene (UHMWPE), we performed gamma irradiation and post-irradiation annealing at a low temperature, and investigated the crystalline structures and mechanical properties of the samples. Electron spin resonance spectra reveal that most of the residual radicals are stabilized by annealing at 100$^{\circ}C$ for 72 h under vacuum. Both the melting temperature and crystallinity increase after increasing the dose and by post-irradiation annealing. When irradiated with the same dose, the quenched sample having a higher amorphous fraction exhibits a lower swell ratio than does the slow-cooled sample. The measured tensile properties correlate well to the crystalline structure of the irradiated and annealed samples. For enhancing creep resistance, high crystallinity appears to be more critical than a high degree of crosslinking.

Synthesis and Characterization of Perylene-based Pyrrolopyrone Derivative for Organic Thin Film Transistor

  • Kim, Hyung-Sun;Jung, Sung-Ouk;Kim, Yun-Hi;Do, Lee-Mi;Kwon, Soon-Ki
    • Journal of Information Display
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    • 제6권4호
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    • pp.1-5
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    • 2005
  • Perylene-based pyrrolopyrone derivative (PPD) was synthesized via condensation reaction with perylenetetracarboxylic dianhydride and 1,2-phenylenediarnine as n-type channel material. The structure of PPD was characterized by spectroscopic methods such FT-IR and $^1H$-NMR. PPD exhibited high thermal stability ($T_{d5wt%}: 560^{\circ}C$) and was found to be soluble only in protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. The PPD solution showed maximum absorption and emission at 601 and 628 nm, respectively. Thin film transistors were fabricated by vacuum deposition and solution casting method. The electron mobilities of the devices were achieved as high as $0.17{\times}10^{-6}cm^2/Vs$ for vacuum deposited device and $0.4{\times}10^{-6}cm^2/Vs$ for spin coated device, respectively.

Solution 코팅횟수에 따른 PZT(80/20)후막의 특성 (Properties of PZT(80/20) Thick Films with the Variation of the Number of Solution Coatings)

  • 박상만;이성갑;이영희;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1418-1419
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    • 2006
  • PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

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Hot wall epitaxy법에 의해 성장된 $AgInS_2$ 박막의 광전기적 특성 (Opto-electric properties for the $AgInS_2$ epilayers grown by hot wall epitaxy)

  • 이관교;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.267-270
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    • 2004
  • A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.

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고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성 (Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film)

  • 형건우;표상우;김준호;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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Validity of the Analytic Expression for the Temperature of Joule Heated Nano-wire

  • Ha, Seung-Seok;You, Chun-Yeol
    • Journal of Magnetics
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    • 제12권1호
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    • pp.7-11
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    • 2007
  • We confirm the validity of the analytic expression for the temperature of the Joule heated nano-wire [C.-Y. You et al. Appl. Phys. Lett. 89, 222513 (2006)] with finite element method. The temperature of the Joule heated nano-wire is essential information for the research of the current induced domain wall movement. The analytic expression includes an adjustable parameter which must be determined. Since the physical origin of the adjustable parameter is simplification of the heat source profile, the validity of the analytic expression must be examined for wide range of the nano-wire structure. By comparison with this analytic expression with the results of full numerical finite element method, the adjustable parameter has been determined. The numerically confirmed adjustable parameter values are in the range of 0.60$\sim$0.69, which is well matched with the theoretically expected one. Furthermore, it is found that the adjustable parameter is a slow varying function of the nano-wire geometry. Based on this numerical confirmation, we can apply the analytic expression for the wide range of the nano-wire geometry with proper adjustable parameters.

Planar Hall Sensor Used for Microbead Detection and Biochip Application

  • Thanh, N.T.;Kim, D.Y.;Kim, C.G.
    • Journal of Magnetics
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    • 제12권1호
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    • pp.40-44
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    • 2007
  • The Planar Hall effect in a spin valve structure has been applied as a biosensor being capable of detecting $Dynabeads^{(R)}$ M-280. The sensor performance was tested under the application of a DC magnetic field where the output signals were obtained from a nanovoltmeter. The sensor with the pattern size of $50{\times}100{\mu}m^2$ has produced high sensitivity; especially, the real-time profiles by using that sensor revealed significant performance at external applied magnetic field of around 7.0 Oe with the resolution of 0.04 beads per $\mu m^2$. Finally, a successful array including 24 patterns with the single sensor size of $3{\times}3{\mu}m^2$ has shown the uniform and stable signals for single magnetic bead detection. The comparison of this sensor signal with the others has proved feasibility for biosensor application. This, connecting with the advantages of more stable and high signal to noise of PHR sensor's behaviors, can be used to detect the biomolecules and provide a vehicle for detection and study of other molecular interaction.

Electron Transport and Magneto-optical Properties of Magnetic Shape-memory $Ni_2NnGa$ Alloy

  • Lee, Y.P.;Lee, S.J.;Kim, C.O.;Jin, X.S.;Zhou, Y.;Kudryavtsev, Y.V.;Rhee, J.Y.
    • Journal of Korean Vacuum Science & Technology
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    • 제6권1호
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    • pp.12-15
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    • 2002
  • The physical properties, including magneto-optical and transport ones, of Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states were investigated. The dependence of the temperature coefficient of resistivity on temperature shows kinks at the structural and ferro-para magnetic transitions. Electron-magnon and electron-phonon scattering are analyzed to be the dominant scattering mechanisms of the Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states, respectively. The experimental real parts of the off-diagonal components of the dielectric function present two sharp peaks, one at 1.9 eV and the other at 3.2 eV, and a broad shoulder at 3.5 eV, all are identified by the band-structure calculations. These peak positions are coincident with those in the corresponding optical-conductivity spectrum, which is thought to originate from the single-spin state in Ni$_2$MnG$_2$ alloy.

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계면활성제 수용액의 미셀형성(제1보) - Polyoxyethylene Alkyl Ether의 자기확산과 프로톤 이완 - (Studies on the Micelle Formation of Nonionic Surfactant(1) -1NMR Self-Diffusion and Proton Relaxation of Polyoxyethylene Alkyl Ether-)

  • 최성옥;정환경;이진희;남기대
    • 공업화학
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    • 제9권6호
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    • pp.822-828
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    • 1998
  • $^1H$ NMR gradient spin echo법을 이용하여 polyoxyethylene dodecyl ether[$C_{12}H_{25}(OCH_2CH_2)nOH$] 수용액에서 미셀 형성과정에 대한 것을 비교검토 하였다. 여기서 n=5($C_{12}EO_5$) 및 n=8($C_{12}EO_8$)인 비이온성 계면활성제를 사용하였으며 등방성상의 영역범위에서의 자기확산 계수는 일정온도에서 농도변화에 따른 pulsed field gradient법을 사용하여 측정하였고, 또한 여러 프로톤의 시그날에 대한 피크폭(line width)을 추적하여 액정 특성에 대한 것을 검토하였다. 알킬사슬의 메틸렌 시그날의 넓혀짐은 $C_{12}EO_5-$물 계에서는 핵사고날 액정상의 근접될 때 관찰되었지만 $C_{12}EO_8-$물 계에서는 넓혀짐이 보다 작게 관찰되었다. 낮은 온도에서 농도가 증가함에 따라 $C_{12}EO_5$에서는 막대형 미셀이 형성되지만 $C_{12}EO_8$에서는 전 농도 범위에서 작은 미셀로 이루워 진다. 계면활성제의 자기확산계수는 서서히 증가하다가 극소점에 이르러서는 농도가 증가함에 따라 급격히 감소한다. 극소점의 위치는 온도가 담점에 이르렀을 때 낮은 농도에서 나타나고 이 계에서는 두 개의 등방성 상으로 분리된다. 피크폭 연구에서 피크폭의 넓어짐은 $C_{12}EO_5$에서는 온도가 증가되었을 때 온도의 차이로 형성된다. 그 결과 담점에 이르러 계면활성제의 회합체가 커지는 것으로 생각한다. 이 회합체가 담점에 이르러 한정된 모양을 갖는 것은 아니다. $C_{12}EO_8$에서는 미셀들이 온도의 증가에 영향을 받지 않고 미셀형성이 불확실하다. 에틸렌옥사이드 일부분의 메틸렌 시그날은 일관되게 좁게 나타났다. 회합에 있어서 이들은 알킬사슬 메틸렌보다 작은 질서로 나타내었다. 회합의 크기나 모양에 있어서 여러 변화성은 상 변화에 따라 등방성과 액정상의 안정성 범위가 정하여 진다. 회합체 크기와 상 구조는 여러 온도와 농도 변화에서 분자의 효과적 모형을 고려하여 정성적인 결과에 따른다.

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