• Title/Summary/Keyword: $Spin^c$-structure

Search Result 287, Processing Time 0.021 seconds

LOW RANK ORTHOGONAL BUNDLES AND QUADRIC FIBRATIONS

  • Insong Choe ;George H. Hitching
    • Journal of the Korean Mathematical Society
    • /
    • v.60 no.6
    • /
    • pp.1137-1169
    • /
    • 2023
  • Let C be a curve and V → C an orthogonal vector bundle of rank r. For r ≤ 6, the structure of V can be described using tensor, symmetric and exterior products of bundles of lower rank, essentially due to the existence of exceptional isomorphisms between Spin(r, ℂ) and other groups for these r. We analyze these structures in detail, and in particular use them to describe moduli spaces of orthogonal bundles. Furthermore, the locus of isotropic vectors in V defines a quadric subfibration QV ⊂ ℙV . Using familiar results on quadrics of low dimension, we exhibit isomorphisms between isotropic Quot schemes of V and certain ordinary Quot schemes of line subbundles. In particular, for r ≤ 6 this gives a method for enumerating the isotropic subbundles of maximal degree of a general V , when there are finitely many.

Post-annealing Effect of Giant Magnetoresistance-Spin Valve Device for Sensor (센서용 거대자기저항 스핀밸브소자의 열처리 효과)

  • Lee, Sang-Suk;Park, Sang-Hyun;Soh, Kwang-Sup;Joo, Ho-Wan;Kim, Gi-Wang;Hwang, D.G.
    • Journal of the Korean Magnetics Society
    • /
    • v.17 no.4
    • /
    • pp.172-177
    • /
    • 2007
  • In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.

Optical, Structural and Photo-catalytic properties of TiO2 thin films prepared by using Ti-naphthenate (Ti-naphthenate를 이용하여 제조한 광감응성 TiO2 박막의 광학적 및 구조적 특성)

  • Lim, Yong-Moo;Jung, Ju-Hyun;Hwang, Kyu-Seog
    • Journal of Korean Ophthalmic Optics Society
    • /
    • v.10 no.3
    • /
    • pp.185-191
    • /
    • 2005
  • Photo-reactive $TiO_2$ thin films on soda-lime-silica slide glass were prepared by spin coating technique with a Ti-naphthenate precursor. Optical, structural and photo-catalytic properties of the films after annealing at $500^{\circ}C{\sim}600^{\circ}C$ were evaluated. As increase with annealing temperature, absorption bands and total transmittance of the films showing an average transmittance (about 80%) at visible spectra range were shifted to UV spectra range and slightly decreased. Refractive index and thickness of the films were increased from 2.16 to 2.63 and decreased from 484 nm to 439 nm, respectively, with increase of annealing temperature. Anatase phase was visible at all annealing temperature. More rougher surface structure was obtained at $600^{\circ}C$ than those of films annealed at $500^{\circ}C$ and $550^{\circ}C$. The hydrophilic conversion was found within 45 min by UV stimulation and optical activation was UVC>UVA>UVB at the case of $500^{\circ}C{\sim}550^{\circ}C$ and UVA>UVC>UVB at the annealing temperature of $600^{\circ}C$. The lowest initial contact angle was obtained at $600^{\circ}C$.

  • PDF

Study on Mo(V) Species, Location and Adsorbates Interactions in MoH-SAPO-34 by Employing ESR and Electron Spin-Echo Modulation Spectroscopies (ESR, ESEM을 이용한 이온 교환된 MoH-SAPO-34에 대한 Mo의 화학종, 위치 및 흡착상호작용에 관한 연구)

  • Back, Gern-Ho;Jang, Chang-Ki;Ru, Chang-Kuk;Cho, Young-Hwan;So, Hyun-Soo;Kevan, Larry
    • Journal of the Korean Chemical Society
    • /
    • v.46 no.1
    • /
    • pp.26-36
    • /
    • 2002
  • A solid-state reaction of $MoO_3$ with as-synthesized H-SAPO-34 generated paramagnetic Mo(V) species. The dehydration resulted in weak Mo(V) species, and subsequent activation resulted in the formation of Mo(V) species such as $Mo(V)_{5c}$ and $Mo(V)_{6c}$ that are characterized by ESR. The data of ESR and ESEM show the oxomolybdenum species, to be $(MoO_2)^+$ or $(MoO)^{3+}$. The $(MoO_2)^+$ species seems to be more probable. Since H-SAPO-34 has a low framework negative charge, $(MoO)^{3+}$ with a high positive charge can not be easily stabilized. A solution reaction between the solution of silico-molybdic acid and calcined H-SAPO-34 resulted in only $(MoO_2)^+$ species. A rhombic ESR signal is observed on adsorption of $D_2O$, $CD_3OH$, $CH_3Ch_2OD$ and $ND_3$. The Location and coordination structure of Mo(V) species has been determined by three-pulse electron spin-echo modulation data and their simulations. After the adsorption of methanol, ethylene, ammonia, and water for MoH-SAPO-34, three molecules, one molecule, one and one molecule, respectively, are directly coordinated to $(MoO_2)^+)$.

Variations of ferroelectric properties with the addition of Yttrium acetate in the $Pb(Zr_{0.65}Ti_{0.35})O_3$ thin films prepared by Sol-Gel processing (Sol-Ge법에 의한 $Pb(Zr_{0.65}Ti_{0.35})O_3$박막의 Yttrium acetate 첨가에 따른 강유전 특성의 변화)

  • 김준한;이규선;이두희;박창엽
    • Electrical & Electronic Materials
    • /
    • v.8 no.3
    • /
    • pp.261-266
    • /
    • 1995
  • In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

  • PDF

Analysis of Magnetic Isotropy Property using Magnetoresistance Curve of CoFe/Cu/CoFe/PtMn Multilayer Film (CoFe/Cu/CoFe/PtMn 다층박막의 자기저항 곡선을 이용한 자기 등방성 특성 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
    • /
    • v.27 no.4
    • /
    • pp.123-128
    • /
    • 2017
  • The magnetic isotropy property from the magnetoresistance (MR) curve and magnetization (MH) loop for the PtMn based spin valve (SV) multilayer films fabricated with different the bottom structure after post-annealing treatment was investigated. The exchange biased coupling field ($H_{ex}$), coercivity ($H_c$), and MR ratio of Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/Ta(4 nm) SV multilayer film without antiferromagnetic PtMn layer are 0 Oe, 25 Oe, and 3.3 %, respectively. MR curve for the Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/Ta(4 nm) SV multilayer film showed $H_{ex}=2Oe$, $H_c=316Oe$, and MR (%) = 4.4 % with one butterfly MR curve having by the effect of antiferromagnetic PtMn layer. MR curve for the dualtype Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/CoFe(3 nm)/Cu(2.5 nm)/CoFe(6 nm)/Ta(4 nm) SV multilayer film showed $H_c=37.5Oe$ and 386 Oe, MR = 3.5 % and 6.5 % with two butterfly MR curves and square-like hysteresis MH loops. The anisotropy property in CoFe spin valve-PtMn multilayer is neglected by the effects of a very small value of $H_{ex}$ and a very slightly shape magnetic anisotropy. This result is possible to explain the effect of magnetization configuration spin array of the bottom SV film and the top SV film of PtMn layer.

Mössbauer Study of (Fe0.95Ni0.05)7Se8 ((Fe0.95Ni0.05)7Se8의 뫼스바우어 분광학적 연구)

  • Kim, Eng-Chan
    • Journal of the Korean Magnetics Society
    • /
    • v.24 no.2
    • /
    • pp.41-45
    • /
    • 2014
  • By M$\ddot{o}$ssbauer spectroscopy and x-ray measurement $(Fe_{0.95}Ni_{0.05})_7Se_8$ has been studied. The crystal structure of $(Fe_{0.95}Ni_{0.05})_7Se_8$ is found to be a triclinic superstructure of the NiAs sturcture while $Fe_7Se_8$ has a orthohexagonal superstructure. Abrupt changes of quadrupole shifts near 125 K for $(Fe_{0.95}Ni_{0.05})_7Se_8$ suggests that the spin-rotation transition proceeds abruptly, in contrast with the gradual transition reported for $Fe_7Se_8$ with a triclinic superstructure. Isomer shifts indicate a ferrous state for the iron ions at all four states.

Crystal Structure and Low Temperature Magnetic Properties of Melt-Spun $Sm_{2}Co_{7}B_{3}$ Compound (급냉응고된 $Sm_{2}Co_{3}B_{7}$ 화합물의 결정구조와 저온 자기특성)

  • Yang, C.J.;Lee, W.Y.;Choi, S.D.
    • Journal of the Korean Magnetics Society
    • /
    • v.3 no.4
    • /
    • pp.284-288
    • /
    • 1993
  • Low temperature magnetic properties and crystal structures of melt-spun $Sm_{2}Co_{7}B_{3}$ compound were characterized. The magnetic measurements in the temperature range 77 K~450 K indicated that a spin-reorientation took place at about 150~160 K. A large anisotropy was observed(Ha=135 kOe at 300 K, 725 kOe at 77 K) for $Sm_{2}Co_{7}B_{3}$ although the magnetic moment is rather low. The crystal structure of the $Sm_{2}Co_{7}B_{3}$ compound was analyzed in detail by Rietveld analysis of powder diffraction pattern, and it was revealed that B(4h) atoms are not placed in the Sm(2e) layer but in between the Sm(2e) and Co($6i_{1}$) layers.

  • PDF

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Prepared by MOD (MOD 법으로 제작된 Bi3.25La0.75Ti3O12 박막의 강유전 특성)

  • 김경태;김창일;권지운;심일운
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.6
    • /
    • pp.486-491
    • /
    • 2002
  • We have fabricated $Bi_{3.25}La_{0.75}Ti_3O_12$ (BLT) thin films on the Pt/Ti/$SiO_2$/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above $600^{\circ}C$ for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at $650^{\circ}C$ was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of $25.66\mu C/\textrm{cm}^2$, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^9$ bipolar cycling at 5 V and 100 kHz.

Growth and photocurrent properties for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.74-75
    • /
    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

  • PDF