• 한국세라믹학회지
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• 제41권7호
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• pp.528-533
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• 2004

입자크기가 20∼700nm인 구형 실리카입자의 자연침강 혹은 원심분리법으로 제조한 주형체에 탄화규소 전구체 polymethyl-silane (PMS) 혹은 polycarbosilane (PCS) 고분자 용액을 함침한다음, 가교 및 1000∼140$0^{\circ}C$ 열분해하고 마지막으로 불산 (HF)으로 실리카를 식각하여 84∼658nm 기공이 3차원으로 정렬된 메크로다공성(macroporous) 탄화규소 세라믹과 불규칙적인 15∼65nm 기공을 가진 메조다공성(mesoporous) 탄화규소 세라믹을 제조하였다. 전자는 112nm 실리카 입자 주형체를 사용하여 140$0^{\circ}C$로 처리했을 때, 표면적 584.64$m^2$g$^{-1}$을 나타낸 반면, 후자는 20-30nm 실리카 주형체를 사용하여 100$0^{\circ}C$로 처리하였을때, 최대의 표면적 619.4$m^2$g$^{-1}$를 나타내었다, 이와 같이 사용된 실리카 입자, 고분자 전구체, 그리고 열처리 조건에 따른 기공특성을 SEM. TEM 및 BET으로 분석 설명하였다.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• Journal of Magnetics
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• 제19권1호
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• pp.59-63
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• 2014

Nano-sized nickel substituted cobalt ferrite powders, $Ni_xCo_{1-x}Fe_2O_4$ ($0.0{\leq}x{\leq}1.0$), were fabricated by the sol-gel method, and their crystallographic and magnetic properties were studied. All the ferrite powders showed a single spinel structure, and behaved ferrimagnetically. When the nickel substitution was increased, the lattice constants and the sizes of particles of the ferrite powders decreased. The M$\ddot{o}$ssbauer absorption spectra of $Ni_xCo_{1-x}Fe_2O_4$ ferrite powders could be fitted with two six-line subspectra, which were assigned to a tetrahedral A-site and octahedral B-sites of a typical spinel crystal structure. The increase in values of the magnetic hyperfine fields indicated that the superexchange interaction was stronger, with the increased nickel concentration in $Ni_xCo_{1-x}Fe_2O_4$. This could be explained using the cation distribution, which can be written as, $(Co_{0.28-0.28x}Fe_{0.72+0.28x})[Ni_xCo_{0.72-0.72x}Fe_{1.28-0.28x}]O_4$. The two values of the saturation magnetization and the coercivity decreased, as the rate of nickel substitution was increased. These decreases could be explained using the cation distribution, the magnetic moment, and the magneto crystalline anisotropy constant of the substituted ions.

• 한국재료학회지
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• 제24권11호
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• pp.599-603
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• 2014

$NaLa_{1-x}(MoO_4)_2:Eu^{3+}/Yb^3$ phosphors with doping concentrations of $Eu^{3+}$ and $Yb^{3+}$ ($x= Eu^{3+}+Yb^{3+}$, $Eu^{3+}=0.05$, 0.1, 0.2 and $Yb^{3+}= 0.2$, 0.45) were successfully synthesized by the microwave-modified sol-gel method, and the upconversion and spectroscopic properties were investigated. Well-crystallized particles showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, $NaLa_{0.5}(MoO_4)_2:Eu_{0.05}Yb_{0.45}$ particles exhibited a strong 525-nm emission band and a weak 550-nm emission band in the green region, and a very weak 665-nm emission band in the red region. The strong 525-nm emission in the green region corresponds to the $^7F_1{\rightarrow}^5D_1$ transition and the weak 550-nm emission in the green region corresponds to the $^7F_0{\rightarrow}^5D_2$ transition, while the very weak emission 665-nm band in the red region corresponds to the $^5D_0{\rightarrow}^7F_3$ transition. The Raman spectra of the doped particles indicated the domination of strong peaks at higher frequencies of 762, 890, 1358 and $1430cm^{-1}$ and weak peaks at lower frequencies of 323, 388 and $450cm^{-1}$ induced by the disorder of the $[MoO4]^{2-}$ groups with the incorporation of the $Eu^{3+}$ and $Yb^{3+}$ elements into the crystal lattice or by a new phase formation.

• 한국염색가공학회지
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• 제21권6호
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• pp.1-11
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• 2009

Super-hydrophobic surface, with a water contact angle greater than $150^{\circ}$, has a self cleaning effect termed 'lotus effect'. We introduced super-hydrophobicity onto aramid/rayon mixture fabric with dual-scale structure by assembling silica nano-sol. Mixture fabric was treated with silica nano-sol, fluoric polymer using various parameters such as particle size, concentration. Silica nano-sol size were measured using particle size analyzer. Morphological changes by particle size were observed using field emission scanning electron microscopy(FE-SEM), contact angle measurement equipment. The contact angle of water was about $134.0^{\circ}$, $137.0^{\circ}$, $143.0^{\circ}$, $139.5^{\circ}$ and $139.0^{\circ}$ for mixture fabric coated with 100.2nm, 313.7nm, 558.2nm, 628.5nm and 965.4nm silica nano-sol, compared with about $120.0^{\circ}$ for mixture fabric coated with fluoric polymer. When we mixed particle sizes of 100.2nm and 558.2nm by 7:3 volume ratio, the contact angle of water was about $146.2^{\circ}$. And we mixed particle sizes of 313.7nm and 558.2nm by 7:3 volume ratio, the contact angle of water was about $141.8^{\circ}$. Also we mixed particle sizes of 558.2nm and 965.4nm by 7:3 volume ratio, the best super-hydrophobicity was obtained. In this paper, we fabricated the water-repellent surfaces with various surface structures by using four types of silica nano-sol, and we found that the dual-scale structure was very important for the super-hydrophobicity.

• 한국세라믹학회지
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• 제40권7호
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• pp.637-643
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• 2003

PDP(Plasma Display Panel)용 녹색 형광체의 발광특성과 결정성을 향상시키기 위해 Zn$_2$SiO$_4$:Mn에 co-dopant로 Cr과 Ti 를 각각 첨가하여 졸-겔법으로 합성하였다. 이렇게 합성된 Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) 형광체는 고상반응의 경우와 비교하여 상대적으로 낮은 온도인 110$0^{\circ}C$에서 willemite 구조의 단일상이 형성되었다. 제조된 Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) 형광체에 대하여 진공자외선(Vacuum Ultraviolet, VUV) 영역의 147 nm 여기광원을 사용하여 발광특성을 조사하였다. Co-dopant의 영향을 알아보기 위해 Mn의 농도는 2 ㏖%, $H_2O$/TEOS의 비율은 36.1로 고정하였고, 이때 Cr과 Ti 모두 0.1 ㏖%에서 가장 좋은 발광특성을 나타냈다. Cr이 co-doping된 경우는 농도가 증가할수록 잔광시간은 짧아지나 발광강도는 지속적으로 감소한 반면, Ti를 co-doping했을 때는 오히려 낮은 농도에서 발광강도의 증가를 보이며 2.0 ㏖%에서 급격히 감소하였다.

• 한국정보통신학회논문지
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• 제16권3호
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• pp.558-564
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• 2012

Sol-gel 법으로 Eagle 2000 유리 기판 위에 Ga 도핑 농도와 열처리 온도에 따른 GZO 박막을 제작하여, 전기적 및 광학적 특성을 조사하였다. 1 mol% Ga 이 도핑되고 $600^{\circ}C$에서 열처리한 GZO 박막에서 가장 우수한 (002) 배향성이 관찰되었다. Hall 측정 결과, Ga 도핑 농도가 증가함에 따라 segregation 효과로 인한 캐리어 농도의 감소와 비저항 값의 증가가 관찰되었다. 1 mol% Ga 이 도핑되고 $600^{\circ}C$에서 열처리한 GZO 박막에서 가장 큰 캐리어 농도($9.13{\times}10^{18}cm^{-3}$)와 가장 낮은 비저항 ($0.87{\Omega}cm$) 값을 나타내었다. 모든 박막은 가시광 영역에서 약 80 % 이상의 투과율을 보였으며, Ga 농도가 1 에서 4 mol% 로 증가함에 따라 에너지 밴드 갭이 좁아지는 Burstein-Moss 효과가 관찰되었다.

• Bulletin of the Korean Chemical Society
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• 제27권1호
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• pp.65-70
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• 2006

An amperometric glucose biosensor has been developed based on the use of the nanoporous composite film of sol-gel-derived zirconia and perfluorosulfonated ionomer, Nafion, for the encapsulation of glucose oxidase (GOx) on a platinized glassy carbon electrode. Zirconium isopropoxide (ZrOPr) was used as a sol-gel precursor for the preparation of zirconia/Nafion composite film and the performance of the resulting glucose biosensor was tuned by controlling the water content in the acid-catalyzed hydrolysis of sol-gel stock solution. The presence of Nafion polymer in the sol-gel-derived zirconia in the biosensor resulted in faster response time and higher sensitivity compared to those obtained at the pure zirconia- and pure Nafion-based biosensors. Because of the nanoporous nature of the composite film, the glucose biosensor based on the zirconia/Nafion composite film can reach 95% of steady-state current less than 5 s. In addition, the biosensor responds to glucose linearly in the range of 0.03-15.08 mM with a sensitivity of 3.40 $\mu$A/mM and the detection limit of 0.037 mM (S/N = 3). Moreover, the biosensor exhibited good sensor-to-sensor reproducibility (~5%) and long-term stability (90% of its original activity retained after 4 weeks) when stored in 50 mM phosphate buffer at pH 7 at 4 ${^{\circ}C}$.

• 한국재료학회지
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• 제25권2호
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• pp.107-112
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• 2015

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.