• 제목/요약/키워드: $SnO_2$sensor

검색결과 249건 처리시간 0.021초

SiC 쇼트키 장벽 다이오드를 이용한 CO 가스 감지 특성에 관한 연구 (A study on CO gas sensing characteristics using SiC Schottky diodes)

  • 김창교;노일호;조남인;유홍진;기창진
    • 한국산학기술학회논문지
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    • 제5권1호
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    • pp.83-86
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    • 2004
  • 고온용 마이크로 전자소자를 이용한 일산화탄소 가스센서를 개발하였다. 100-300℃의 영역에서 가스 감지 특성을 조사하였다. 센서의 가스 감도는 높고, 감지속도는 빠르고 센서는 재현성을 보여 주었다. Pt-SiC 및 Pt-SnO₂ 다이오드는 표준 반도체 공정을 이용하여 제작하였다. CO 가스 감지 특성은 정상상태 및 과도 상태의 조건아래에서 Ⅰ-Ⅴ 및 △Ⅰ-t법을 이용하여 CO 가스 농도와 온도의 함수로서 분석하였다. Pt-SnO₂촉매 층을 갖는 소자의 가스 감도가 Pt 게이트만으로 이루어진 소자보다 높았다. 실험 결과는 SnO₂층이 Pt막의 촉매 반응을 향상시키는 것을 보여주었다.

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용액적하법으로 제조된 WO3 첨가 SnO2 박막의 가스감응 특성 (Gas Sensing Characteristics of WO3-Doped SnO2 Thin Films Prepared by Solution Deposition Method)

  • 최중기;조평석;이종흔
    • 한국재료학회지
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    • 제18권4호
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    • pp.193-198
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    • 2008
  • $WO_3$-doped $SnO_2$ thin films were prepared in a solution-deposition method and their gas-sensing characteristics were investigated. The doping of $WO_3$ to $SnO_2$ increased the response ($R_a/R_g,\;R_a$: resistance in air, $R_g$: resistance in gas) to $H_2$ substantially. Moreover, the $R_a/R_g$ value of 10 ppm CO increased to 5.65, whereas that of $NO_2$ did not change by a significant amount. The enhanced response to $H_2$ and the selective detection of CO in the presence of $NO_2$ were explained in relation to the change in the surface reaction by the addition of $WO_3$. The $WO_3$-doped $SnO_2$ sensor can be used with the application of a $H_2$ sensor for vehicles that utilize fuel cells and as an air quality sensor to detect CO-containing exhaust gases emitted from gasoline engines.

Characterization of ZnO Nanorods and SnO2-CuO Thin Film for CO Gas Sensing

  • Lim, Jae-Hwan;Ryu, Jee-Youl;Moon, Hyung-Sin;Kim, Sung-Eun;Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • 제13권6호
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    • pp.305-309
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    • 2012
  • In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

DMMP 검출용 금속산화물을 첨가한 $SnO_2$ 가스센서 제조 (Fabrication of $SnO_2$ Gas Sensor added by Metal Oxide for DMMP)

  • 최낙진;반태현;곽준혁;백원우;김재창;허증수;이덕동
    • 한국군사과학기술학회지
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    • 제6권3호
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    • pp.54-61
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    • 2003
  • $SnO_2$ gas sensor for the detection DMMP, simulant of nerve gas was fabricated and its characteristics were examined. Sensing materials were $SnO_2$ added by TEX>$\alpha$-$Al_{2}O_{3}$ with 0∼20wt.% and $In_{2}O_{3}$ with 0∼3wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Its dimension was 7$\times$10$\times$0.6$\textrm{mm}^2$. Crystallite size 8t phase identification, specific surface area and morphology of fabricated $SnO_2$ powders were analyzed by X-ray diffraction(XRD), surface area analyzer(BET) and by a scanning electron microscope(SEM), respectively. Sensor was measured as flow type and sensor resistance change was monitored as real time using LabVIEW program. The best sensitivities were 75% at adding 4wt.% TEX>$\alpha$-$Al_{2}O_{3}$, operating temperature $300^{\circ}C$ and 87% at adding 2wt.% $In_{2}O_{3}$, operating temperature $350^{\circ}C$ to DMMP 0.5ppm. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with $\pm$3% in full scale. As a result, operating temperature was lower TEX>$\alpha$-$Al_{2}O_{3}$ than $In_{2}O_{3}$, but sensitivity was higher $In_{2}O_{3}$ than $\alpha$-$Al_{2}O_{3}$.

Pt, Ni, Cr이 도포된 튜브형 SnO2 나노섬유의 합성과 가스 감응특성 (Preparation of Pt-, Ni- and Cr-Decorated SnO2 Tubular Nanofibers and Their Gas Sensing Properties)

  • 김보영;이철순;박준식;이종흔
    • 센서학회지
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    • 제23권3호
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    • pp.211-215
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    • 2014
  • The Pt-, Ni- and Cr-decorated tubular $SnO_2$ nanofibers for gas sensors were prepared by the electrospinning of polyvinylpyrrolidone (PVP) nanofibers containing Pt, Ni, and Cr precursors, the sputtering of $SnO_2$ on the electrospun PVP nanofibers, and the removal of sacrificial PVP parts by heat treatment at $600^{\circ}C$ for 2 h. Pt-decorated tubular $SnO_2$ nanofibers showed high response ($R_a/R_g=210.5$, $R_g$: resistance in gas, $R_a$: resistance in air) to 5 ppm $C_2H_5OH$ at $350^{\circ}C$ with negligible cross-responses to other interference gases (5 ppm trimethylamine, $NH_3$, HCHO, p-xylene, toluene and benzene). Cr-decorated tubular $SnO_2$nanofibers showed the selective detection of p-xylene at $400^{\circ}C$. In contrast, no significant selectivity to a specific gas was found in Ni-decorated tubular $SnO_2$ nanofibers. The selective and sensitive detection of gases using Pt-decorated and Cr-decorated tubular $SnO_2$ nanofibers were discussed in relation to the catalytic promotion of gas sensing reaction.

스크린 프린팅 기법을 이용한 $SnO_2-Ag_2O-PtO_x$계 반도체식 마이크로 수소 가스센서에 관한 연구 (Semiconductor type micro gas sensor for $H_2$ detection using a $SnO_2-Ag_2O-PtO_x$ system by screen printing technique)

  • 김일진;한상도;이희덕;왕진석
    • 한국수소및신에너지학회논문집
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    • 제17권1호
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    • pp.69-74
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    • 2006
  • Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

Effects of Additives on the DMMP Sensing Behavior of SnO2 Nanoparticles Synthesized by Hydrothermal Method

  • Kim, Hong-Chan;Hong, Seong-Hyeon;Kim, Sun-Jung;Lee, Jong-Heun
    • 센서학회지
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    • 제20권5호
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    • pp.294-299
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    • 2011
  • $SnO_2$ nanoparticles were synthesized by a hydrothermal method and gas sensors were fabricated using nanoparticles to detect dimethyl methylphosphonate(DMMP) gas. The prepared $SnO_2$ nanoparticles exhibited a high response(72 at $500^{\circ}C$) to 5 ppm DMMP gas compared to commercial $SnO_2$ nanopowders, but their recovery was relatively poor. Various metals(Ni, Sb, Nb) were added to the $SnO_2$ nanoparticles to improve their recovery properties. The focus of this study was to investigate the effects of metal oxide additives on DMMP sensing behavior in $SnO_2$ nanoparticles.

Effect of an Au Nanodot Nucleation Layer on CO Gas Sensing Properties of Nanostructured SnO2 Thin Films

  • Hung, Nguyen Le;Kim, Hyojin;Kim, Dojin
    • 한국재료학회지
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    • 제24권3호
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    • pp.152-158
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    • 2014
  • We report the effect of the fabric of the surface microstructure on the CO gas sensing properties of $SnO_2$ thin films deposited on self-assembled Au nanodots ($SnO_2$/Au) that were formed on $SiO_2/Si$ substrates. We characterized structural and morphological properties, comparing them to those of $SnO_2$ thin films deposited directly onto $SiO_2/Si$ substrates. We observed a significant enhancement of CO gas sensing properties in the $SnO_2$/Au gas sensors, specifically exhibiting a high maximum response at $200^{\circ}C$ and quite a low detection limit of 1 ppm level in dry air. In particular, the response of the $SnO_2/Au$ gas sensor was found to reach the maximum value of 32.5 at $200^{\circ}C$, which is roughly 27 times higher than the response (~1.2) of the $SnO_2$ gas sensor obtained at the same operating temperature of $200^{\circ}C$. Furthermore, the $SnO_2/Au$ gas sensors displayed very fast response and recovery behaviors. The observed enhancement in the CO gas sensing properties of the $SnO_2/Au$ sensors is mainly ascribed to the formation of a nanostructured morphology in the active $SnO_2$ layer having a high specific surface-reaction area by the insertion of a nanodot form of Au nucleation layer.

$SnO_2$ 소결체 반도체 Gas Sensor에 관한 연구 (On the $SnO_2$ Semiconductor Gas Sensor)

  • 박순자;이재열
    • 한국세라믹학회지
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    • 제20권2호
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    • pp.93-98
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    • 1983
  • The sensitivity characteristics of $SnO_2$-based gas sensor prepared by sintering method have been studied at the presence of CO and Propane gas. Samples mixed with 1wt% $La_2O_3$ and 1wt% $PdCl_2$ showed highest sensitivity to CO and propane gas at 250$^{\circ}$C but the addition of $CeO_2$ did not enhance the sensitivity. For slectivity for gas a $SnO_2-La_2O_3$ (1wt%) sample without $PdCl_2$ showed better results. A sample sintered sintered at 115$0^{\circ}C$ has shown the optimum condition in sensitivity and electroding

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Pt 및 Pt-$SnO_2$를 전극으로 하는 SiC 쇼트키 다이오드의 CO 가스 감응 특성 (A study on CO gas sensing Characteristics of Pt-SiC $SnO_2$-pt-SiC Schottky Diodes)

  • 김창교;노일호;양성준;이재홍;이주헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.805-808
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    • 2002
  • A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.

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