• The Korean Journal of Ceramics
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• 제2권1호
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• pp.1-10
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• 1996

Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.269-276
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• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.

• 한국세라믹학회지
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• 제51권1호
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• pp.43-50
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• 2014

We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.

• 센서학회지
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• 제14권2호
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• pp.63-68
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• 2005

The nano-grained Pd or Pt-doped $SnO_{2}$ thin films were deposited on the alumina substrate at ambient temperature or $300^{\circ}C$ by using an R.F. magnetron sputtering system and then annealed at $650^{\cir}C$ for 1 hour or 4 hours in air. The crystallinity and microstructure of the annealed films were analyzed. A grain size of the thin films was 30 nm to 50 nm. As a result of gas sensitivity measurements to an alcohol vapor of $36^{\circ}C$, the 2 wt.% Pt-doped $SnO_{2}$ thin-film sensor deposited at $300^{\circ}C$ and annealed at $650^{\circ}C$ for 4 hours showed the highest sensitivity.

• 열처리공학회지
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• 제30권1호
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• pp.1-5
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• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• Rapid Communication in Photoscience
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• 제4권3호
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• pp.50-53
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• 2015

$SnO_2$ thin films were deposited on fused silica substrate by pulsed laser deposition under transverse magnetic field. We have explored the effects of magnetic field and ablation laser wavelength on the optical properties of laser-induced plasma plume and structural characteristics of the deposited $SnO_2$ films. Optical emission from the plume was monitored using an optical fiber to examine the influence of magnetic field on the population of the excited neutral and ionic species and their decay with times after laser ablation. Also, we employed photoluminescence, x-ray diffraction, and UV-Vis absorption to characterize $SnO_2$ films.

• 열처리공학회지
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• 제25권6호
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• 한국진공학회지
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• 제6권2호
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• pp.114-121
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• 1997

투명전도성 산화주석 박막이 펄스레이저증착에 의하여 파이렉스유리 기판상에 제조 되었다. 진공, $O_2$, 및 $Sn(CH_3)_4$분위기에서 Nd-YAG레이저 빛살이 다결정 $SnO_2$ 타겟을 융제 하여 실온에서 기판상에 박막을 증착시키고, 증착된 막을 230, 420, 및 $610^{\circ}C$에서 각각 2시 간 동안 공기중에서 열처리하였다. 박막의 특성이 UV-VIS-NIR 분광법과 X-선 회절법에 의하여 조사되고, 전기적 성질이 촉심식법으로 구해진 막의 두께와 함께 사점탐침법에 의하 여 측정되었다. $Sn(CH_3)_4$이 존재할 때 $SnO_2$상들이 실온에서조차 성장되는 것이 관찰되었다. 이는 레이저 융제 동안 발생된 마이크로플라즈마가 전구물질분자의 분해에 중요한 역할을 함을 시사한다.

• Journal of Magnetics
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• 제14권4호
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• pp.161-164
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• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.

• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.