• Clean Technology
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• v.30 no.3
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• pp.258-266
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• 2024

Rechargeable Li-SnO₂ batteries suffer from issues such as poor electronic/ionic conductivity and huge volume changes. In order to overcome these inherent limitations, this study designed a cell with a unique hierarchical structure, denoted as SnO₂@PCNF. The SnO₂@PCNF cell design incorporates in-situ generated SnO₂ nanoparticles strategically positioned within N-doped porous carbon nanofibers (PCNF). The in-situ generated SnO₂ nanoparticles can alleviate strains during cycling and shorten the pathway for the ions and electrons, improving the utilization of active materials. Moreover, the N-doped PCNF establishes a continuously conductive network to further increase the electrical conductivity and also buffers the significant volume changes that occur during charging and discharging. The resulting SnO₂@PCNF cell exhibits outstanding electrochemical performance and stable cycling characteristics. Notably, a reversible capacity of 520 mAh g^-1 was achieved after 100 cycles at 70 mA g^-1. Even under a higher current density of 1 A g^-1, the cell maintained a capacity retention of 393 mAh g^-1 after 1,000 cycles. These results highlight the SnO₂@PCNF cell's exceptional cycling stability and superior rate capability.

• Journal of Powder Materials
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• v.31 no.2
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• pp.146-151
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• 2024

Pure SnO₂ has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO₂ with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO₂ have a porous microstructure, with a porosity of > 40%. In pure SnO₂, a high sintering temperature of approximately 1300℃ is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO₂, the compositions of the samples were Sn_1-xTi_xO₂-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO₂, densification was shown to be improved when the samples were sintered at 950℃. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950℃.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.121-126
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• 2003

The electromagnetic properties and microstructures of the basic composition of (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$ were invested by changing of the additive Sn $O_2$, CaO amounts and ferrite processes. There is no variation of grain size by changing additive amount. It can reduce the total loss when (N $i_{0.2}$C $u_{0.2}$Z $n_{0.6}$)$_{1.085}$(F $e_2$ $O_3$)$_{0.915}$ composition sintered at 1150 $^{\circ}C$ better than 130$0^{\circ}C$. Additive CaO confirmed of useful addition for the reduce total loss, because it increasing sintering density. Decreasing total loss were observed by adding both Sn $O_2$ 0.06 wt％ and CaO 0.4 wt％.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.373-378
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• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• Journal of Electrical Engineering and Technology
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• v.7 no.4
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• pp.596-600
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• 2012

ZnO-$SnO_2$ films were deposited by rf magnetron sputtering using a ZnO-$SnO_2$ (2:1 molar ratio) target. The target was made from a mixture of ZnO and $SnO_2$ powders calcined at $800^{\circ}C$. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon ($O_2$:Ar) was varied from 0% to 10%, and the substrate temperature was varied from $27^{\circ}C$ to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-$SnO_2$ films deposited in $O_2$:Ar = 10% exhibited resistivity higher than $10^6{\Omega}cm$ and transmittance of more than 80% in the visible range.

• Journal of Surface Science and Engineering
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• v.49 no.1
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• pp.98-103
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• 2016

The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.272-272
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• 2014

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A stack structure of $SnO_2/SnO$, where few nanometers of $SnO_2$ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films were introduced. The electrical behavior of the as-sputtered films during the annealing was recorded to investigate the working conditions for the SnO sensor. Subsequently, The NH3 sensing properties of the SnO sensor at operating temperature of $50-200^{\circ}C$ were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to $NH_3$ vapor. The sensor properties toward several gases like $H_2S$, $CH_4$ and $C_3H_8$ were also introduced. Finally, a sensing mechanism was proposed and discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.231-233
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• 1987

A study has been made on the electrical properties of sintered Ag-$SnO_2$ composite materials. Hardness increased with $SnO_2$ contents increasing while the electrical conductivity decreased. The weight loss after are erosion test was decreased with $SnO_2$ contents increasing to 10 (w/o) $SnO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.269-276
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• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.