• 제목/요약/키워드: $SnO_{2}$

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SnO2-CoO/carbon-coated CoO core/shell 나노선 복합체의 합성 및 구조분석 (Synthesis and Characterization of SnO2-CoO/carbon-coated CoO Core/shell Nanowire Composites)

  • 이유진;구본율;안효진
    • 한국분말재료학회지
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    • 제21권5호
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    • pp.360-365
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    • 2014
  • $SnO_2-CoO$/carbon-coated CoO core/shell nanowire composites were synthesized by using electrospinning and hydrothermal methods. In order to obtain $SnO_2-CoO$/carbon-coated CoO core/shell nanowire composites, $SnO_2-Co_3O_4$ nanowire composites and $SnO_2-Co_3O_4$/polygonal $Co_3O_4$ core/shell nanowire composites are also synthesized. To demonstrate their structural, chemical bonding, and morphological properties, field-emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were carried out. These results indicated that the morphologies and structures of the samples were changed from $SnO_2-Co_3O_4$ nanowires having cylindrical structures to $SnO_2-Co_3O_4/Co_3O_4$ core/shell nanowires having polygonal structures after a hydrothermal process. At last, $SnO_2-CoO$/carbon-coated CoO core/shell nanowire composites having irregular and high surface area are formed after carbon coating using a polypyrrole (PPy). Also, there occur phases transformation of cobalt phases from $Co_3O_4$ to CoO during carbon coating using a PPy under a argon atmosphere.

Synthesis of SnO2Microrods by the Thermal Evaporation of Sn Powders

  • Kong, Myung-Ho;Kim, Hyoun-Woo
    • 한국재료학회지
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    • 제18권3호
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    • pp.123-127
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    • 2008
  • The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • 신새영;문연건;김웅선;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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탄화수소계 가스센서를 위한 SnO2-TiO2계 후막의 제조 (Fabrication of SnO2-TiO2-based Thick Films for Hydrocarbon Gas Sensors)

  • 정완영;박정은;강봉휘;이덕동
    • 한국세라믹학회지
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    • 제28권9호
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    • pp.721-729
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    • 1991
  • SnO2-TiO2(Pt or Pd), as raw material for hydrocarbon gas sensors, was prepared by a coprecipitation method. The SnO2-TiO2-based thick film gas sensors were made by screen printing technique. The titanium dioxide synthesized was shown to be anatase structure from XRD peaks and was transformed to rutile structure between 700$^{\circ}C$ and 1000$^{\circ}C$. Titanium dioxide in SnO2-TiO2 thick films devices plays a very important role in the enhancement of the sensitivity to CH4 and C4H10. In the case of SnO2-TiO2(Pt) sensors, titanium dioxide that was rutile structure enhanced the sensitivity of the thick film to CH4. Platinum added to the raw powder at coprecipitation (as chloroplatinic acid VI hydrate) improved the gas sensitivity to hydrocarbon gases. Therefore, it is expected that the SnO2-TiO2(Pt) thick film sensors fabricated in this experiment could be put into practical use as LPG (primary component : C4H10 and C3H8) and LNG (primary component : CH4) sensors.

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스크린 프린팅 기법을 이용한 $SnO_2-Ag_2O-PtO_x$계 반도체식 마이크로 수소 가스센서에 관한 연구 (Semiconductor type micro gas sensor for $H_2$ detection using a $SnO_2-Ag_2O-PtO_x$ system by screen printing technique)

  • 김일진;한상도;이희덕;왕진석
    • 한국수소및신에너지학회논문집
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    • 제17권1호
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    • pp.69-74
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    • 2006
  • Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

촉매가 첨가된 SnO2 후막형 가스센서의 특성 연구 (Characteristics of SnO2 Thick Film Gas Sensors Doped with Catalyst)

  • 이돈규;유윤식;이지영;유일
    • 한국전기전자재료학회논문지
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    • 제23권8호
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    • pp.622-626
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    • 2010
  • Cu doped $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $500^{\circ}C$ in air, respectively. Structural properties of $SnO_2$ by X-ray diffraction showed (110), (101) and (211) dominant tetragonal phase. The effects of catalyst Cu in $SnO_2$-based gas sensors were investigated. Sensitivity of $SnO_2$:Cu sensors to 2,000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas was investigated for various Cu concentration. The highest sensitivity to $CO_2$ gas and $H_2S$ gas of Cu doped $SnO_2$ gas sensors was observed at the 8 wt% and 12 wt% Cu concentration, respectively. The improved sensitivity in the Cu doped $SnO_2$ gas sensors was explained by decrease of electron depletion region in Cu and $SnO_2$ junction, and increase of reactive oxygen and surface area in the $SnO_2$.

The Electrochemical Properties of SnO2 as Cathodes for Lithium Air Batteries

  • Lee, Yoon-Ho;Park, Heai-Ku
    • 전기화학회지
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    • 제22권4호
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    • pp.164-171
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    • 2019
  • Nano-sized $SnO_2$ powders were synthesized via a solvent thermal reaction using $SnClO_4$, NaOH, and ethylene glycol at $150^{\circ}C$. TGA, SEM, FT-IR, XRD, and Potentiostat/Galvanostat were employed to investigate the chemical and electrochemical characteristics of the synthesized $SnO_2$. The structure of $SnO_2$ was amorphous, and when heat treated at $500^{\circ}C$, it was transformed into a crystalline structure. The morphology obtained by SEM micrographs of the as-synthesized $SnO_2$ showed powder features that had diameters ranging 100 to 200 nm. The electrochemical performance of the crystalline $SnO_2$ as a Li-air battery cathode was better than that of the amorphous $SnO_2$. The specific capacity of the crystalline $SnO_2$ was at least 350 mAh/g at 10 mA/g discharge rate. However, there was some capacity loss of all the cells during the consecutive cycles. Keywords : Lithium-Air Battery.

Sn-Zr계 촉매 상에서 CO와 H2를 이용한 SO2 환원 반응특성 (The Reactivity for the SO2 Reduction with CO and H2 over Sn-Zr Based Catalysts)

  • 한기보;박노국;류시옥;이태진
    • Korean Chemical Engineering Research
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    • 제44권4호
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    • pp.356-362
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    • 2006
  • 본 연구에서는 석탄가스화복합발전(integrated gas combined cycle, 이하 IGCC) 시스템의 석탄가스화기로부터 생산되는 석탄가스가 환원제로 이용되는 $SO_2$ 환원공정인 직접 황 회수 공정(direct sulfur recovery process, 이하 DSRP)에서 이용 가능한 Sn-Zr계 촉매 상에서의 $SO_2$ 환원반응특성을 조사하였다. Sn-Zr계 촉매는 0/1, 1/4, 1/1, 2/1, 3/1, 1/0의 Sn/Zr 몰비로 조절하여 침전법 및 공침법으로 제조되었다. 공간속도가 $10,000ml/g_{-cat.}{\cdot}h$, 반응물 몰비$([CO(or\;H_2)]/[SO_2])$가 2.0인 반응조건 하에서 Sn-Zr계 촉매를 이용하여 온도를 변화시킨 가운데 석탄가스에 포함되어 있는 $H_2$ 또는 CO를 환원제로 사용하여 $SO_2$ 환원에 대한 반응특성이 조사되었다. 실험 결과, 환원제의 종류에 상관없이 $SnO_2$$ZrO_2$보다 Sn-Zr계 촉매가 활성이 더 높았으며, 환원제의 종류에 대한 반응성 조사 결과, $H_2$보다 CO가 $SO_2$ 환원에 더 높은 반응성을 나타내었다. $H_2$가 환원제로 이용된 $SO_2$ 환원특성을 조사한 결과, Sn/Zr 비에 따라 제조된 Sn-Zr계 촉매의 종류에 상관없이 온도가 증가함에 따라 반응성이 증가하는 경향을 보이며 Sn/Zr 몰비가 1/4인 촉매를 사용한 경우 $550^{\circ}C$에서 $SO_2$전환율이 94.4%, 원소 황 수율이 66.4%로 높은 반응성을 나타내었다. 반면 CO를 환원제로 이용한 경우에는 Sn/Zr 몰비가 높은 촉매일수록 최적 반응온도가 감소되는 특이한 경향을 나타내었다. Sn-Zr계 촉매 중 Sn/Zr 몰비가 3/1인 $SnO_2-ZrO_2$ 촉매가 가장 낮은 최적 반응온도에서 높은 반응성을 나타내었는데, $325^{\circ}C$에서 $SO_2$전환율이 약 100%, 원소 황 수율이 약 99.5%로 가장 높은 반응성을 얻었다. 그리고 CO가 $H_2$보다 더 많이 포함되어 있는 석탄모사가스에 대하여 환원제로서의 이용가능성을 확인하고자 $CO/H_2$ 비를 달리한 각각의 합성가스에 대하여 $SO_2$ 환원반응실험을 수행하였다. Sn/Zr 몰비가 2/1인 Sn-Zr계 촉매 상에서 $SO_2$ 환원반응 실험 결과, CO 함량이 높은 합성가스일수록 효과적인 환원제임을 확인할 수 있었다. 따라서 Sn-Zr계 촉매가 적용된 DSRP에서 석탄모사가스가 환원제로 이용 가능하다는 것을 알 수 있었다.

높은 표면적을 갖는 SnO 나노구조물의 열처리 효과에 관한 연구 (A Study on the Annealing Effect of SnO Nanostructures with High Surface Area)

  • 김종일;김기출
    • 한국산학기술학회논문지
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    • 제19권9호
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    • pp.536-542
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    • 2018
  • 이산화주석은 Rutile 구조를 갖는 Oxygen-Deficient n-type 반도체 물질로서, $H_2$, CO, $CO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 가지고 있고, 이러한 성질을 활용하면 다양한 가스의 감지가 가능하기 때문에 가스센서로 연구가 활발히 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체의 흡착이 유리하고, 가스 센서의 성능이 향상될 수 있다. 본 연구에서는 Thermal CVD 공정을 이용하여 SnO Nanoplatelet을 Si 기판위에 Dense하게 성장시켰다. 기상 수송 방법(Vapor Transport Method)으로 성장된 SnO 나노구조물을 Thermal CVD System을 이용하여 산소분위기에서 $830^{\circ}C$$1030^{\circ}C$에서 열처리(Post-Annealing)하여 $SnO_2$ 상(Phase)을 갖도록 하였다. 열처리 과정동안 쳄버의 압력을 4.2 Torr로 일정하게 유지시켰다. 열처리 된 SnO 나노구조물의 결정학적 특성을 Raman Spectroscopy 및 XRD 분석을 통하여 확인하였고, 형태학적 변화를 주사전사현미경(Scanning Electron Microscopy)을 통하여 확인하였다. 분석결과 SnO 나노구조물은 열처리 과정을 통하여 $SnO_2$ 나노구조물로 상변환 되었다.

입자크기에 따른 SnO2:Ni 가스센서의 감응 특성 (Effect of the Particle Size of SnO2:Ni on Gas Sensing Properties)

  • 이지영;유일
    • 한국재료학회지
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    • 제21권4호
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    • pp.207-211
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    • 2011
  • Ni 8 wt.%-doped tin oxide ($SnO_2$) thick films were fabricated into gas sensors by the method of screen printing onto alumina substrates. The particle size of $SnO_2$ was controlled by changing the ball-mill time between 0~120 h. The structural and morphological properties of these thick films were investigated using X-ray diffraction and scanning electron microscopy. The structural properties of $SnO_2$ powders showed a tetragonal phase with (110) dominant orientation. The particle size of the $SnO_2$:Ni powders after ball-mill of 120 h was about 0.05 ${\mu}m$. The gas sensitivity (S = Rg/Ra) to 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air (Ra) with that of the target gases (Rg). The sensitivity of the $SnO_2$ gas sensors was enhanced by increasing the ball-mill time. There was an association between the sensitivity of both the $CH_4$ gas and the $CH_3CH_2CH_3$ gas and the particle size of the $SnO_2$. $SnO_2$ gas sensors prepared by 72 h ball-mill showed a sensitivity of about 13 to 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas. The response time of the $SnO_2$:Ni gas sensors to the $CH_4$ gas was about 20 seconds.