• 제목/요약/키워드: $Si_3 N_4 O_3$

검색결과 1,045건 처리시간 0.028초

High Temperature Properties of $Si_3N_4-Re$Silicon Oxynitride (Re=Y, Yb, Er, La) Ceramics

  • Park, Heon-Jin;Lee, June-Gunn;Kim, Young-Wook;Cho, Kyeong-Sik
    • The Korean Journal of Ceramics
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    • 제5권3호
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    • pp.211-216
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    • 1999
  • Four different $\beta-Si_3N_4$ ceramics with silicon oxynitrides $[Y_10(SiO_4)_6N_2, Yb_4Si_2N_2O_7, Er_2Si_3N_4O_3, \;and La_{10}(SiO_4)_6N_2$, respectivley] as secondary phases have been fabricated by hot-pressing the $Si_3N_4-Re_4Si_2N_2O_7$ (Re=Y, Yb, Er, and La) compositions at $1820^{\circ}C$ for 2h under a pressure of 25 MPa. The high temperature strength and oxidation behavior of the hot-pressed ceramics were characterized and compared with those of the ceramics fabricated from $Si_3N_4-Si_2O_7$ compositions. The $Si_3N_4-Re_4Si_2N_2O_7$composition investigated herein showed comparable high temperature strength to those from $Si_3N_4-Re_2Si_2O_7$ compositions. Si3N4 ceramics from a $Si_3N_4-Y_4Si_2N_2O_7$ composition showed the highest strength of 877 MPa at $1200^{\circ}C$ among the compositions. All $Si_3N_4$ ceramics investigated herein showed a parabolic weight gain with oxidation time at $1400^{\circ}C$ and the oxidation products of the ceramics were $SiO_2$ and $Re_2Si_2O_7$. The $Si_3N_4-Re_4Si_2N_2O_7$ compositions showed inferior oxidation resistance to those from $Si_3n_4-Re_2Si_2O_7$ compositions, owing to the incompatibility of the secondary crystalline phases of those ceramics with $SiO_2$, the oxidation product of Si3N4.Si3N4 ceramics from a $Si_3N_4-Er_4Si_2N_2O_7$ composition showed the best oxidation resistance of 0.375mg/$\textrm{cm}^2$ after oxidation at $1400^{\circ}C$ for 102 h in air among the compositions.

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안경렌즈코팅용 소형 Sputter Coating System 설계 및 제작에 관한 연구 (Design and Fabrication of Sputter Coating System for Ophthalmic Lens)

  • 박문찬;정부영;김응순;이종근;주경복;문희성
    • 한국안광학회지
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    • 제13권1호
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    • pp.53-58
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    • 2008
  • 목적: 안경렌즈용 소형 suptter coating system을 설계하고 제작하고자 한다. 방법: sputter system의 target 설계에 있어서 Essential Macleod thinfilm design software를 이용해 AR 코팅과 mirror 코팅이 동시에 설계 가능한 Si target 을 결정하였으며. 그 후 sputtering 장비를 제작하였다. 결과: $SiO_2$$Si_3N_4$의 5층 박막으로 구성되는 AR 코팅의 최적조건은 [air|$SiO_2$(81.3)|$Si_3N_4$(102)|$SiO_2$(19.21)|$Si_3N_4$(15.95)| $SiO_2$(102)|glass] 이였다. Mirror 코팅의 경우, blue color 코팅의 최적조건은 [air|$SiO_2$(56.61)|$Si_3N_4$(135.86)|$SiO_2$(67.64)| $Si_3N_4$(55.4)|$SiO_2$ (53.53)|$Si_3N_4$(51.28)|glass] 이고, green color 코팅의 최적조건은 [air|$SiO_2$(66.2)|$Si_3N_4$(22.76)|$SiO_2$(56.58)| $Si_3N_4$(140.35) |$SiO_2$(152.35)|$Si_3N_4$(70.16)|$SiO_2$(121.87)|glass] 이였으며, gold color 코팅의 최적조건은 [air|$SiO_2$(83.59)|$Si_3N_4$(144.86) |$SiO_2$(11.82)|$Si_3N_4$(129.93)|$SiO_2$(90.01)|$Si_3N_4$(88.37)|glass] 이였다. 결론: 코팅 시간을 줄여 안경단가를 줄이기 위하여 안경렌즈 코팅 시 렌즈의 전 후면을 동시에 코팅을 해야 하기 때문에 sputtering장비 설계를 할 때 안경렌즈 전면과 후면에 동일하게 Si target을 갖춘 cathode를 사용하였고, 렌즈의 곡률을 고려하여 각 층이 동일하게 코팅이 되어야 하기 때문에 target-substrate 간의 간격은 12.5 cm에서 20 cm로 가변할 수 있도록 설계하고 제작하였다. 고품질의 안경렌즈 코팅을 위하여 고진공 펌프로 turbo pump를 이용하였으며, 코팅박막의 균일함을 얻기 위해서 치구를 회전할 수 있도록 설계하고 제작하였다.

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TiO2/Si3N4/Ag/Si3N4/TiO2 다층구조에서 Si3N4 버퍼층이 투과율에 미치는 영향 (Effect of Si3N4 Buffer Layer on Transmittance of TiO2/Si3N4/Ag/Si3N4/TiO2 Multi Layered Structure)

  • 이서희;장건익
    • 한국전기전자재료학회논문지
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    • 제25권1호
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    • pp.44-47
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    • 2012
  • The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

초전형 적외선 센서를 위한 MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si 기판 제작 (Fabrication of MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si Substrate for Pyroelectric IR Sensor)

  • 김성우;성세경;류지열;최우창;최혁환;이명교;권태하
    • 센서학회지
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    • 제9권2호
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    • pp.90-95
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    • 2000
  • $Si_3N_4/SiO_2/Si_3N_4$/Si 판위에 MgO 박막을 성장하여 MgO 단결정과 결정배향성이 유사한 초전형 적외선 센서용 기판을 제작하였다. RF 마그네트론 스퍼터링법으로 MgO 박막을 성장하였고, 그 위에 Pt 하부전극과 PLT 박막을 성장시킨 후 c축 배향성을 조사하였다. $500^{\circ}C$의 기판온도와 30 mTorr의 분위기 압력 및 160 W의 RF power에서 성장된 MgO 박막이 단결정 MgO가 가지는 배향성 정도의 우수한 a축 배향성을 보였고, 그 위에 성장된 PLT 박막은 MgO 단결정 기판위에 성장된 것과 거의 회절강도 변화가 유사한 c축 배향성을 보였다.

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청색광 검출 Si Photodiode에서 $SiO_{2}/Si_{3}N_{4}$ 광반사 방지막의 최적두께 설계

  • 서동균;황용운;장지근
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
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    • pp.67-71
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    • 2004
  • 400~450nm 파장 범위의 청색광을 검출하는 Si 포토다이오드에서 $SiO_2$, $Si_{3}N_{4}$, $SiO_{2}/Si_{3}N_{4}$를 광반사 방지막으로 사용하는 경우 광반사 방지막의 두께에 따른 표면 광반사 손실을 이론적으로 계산하였다. 400~450nm 청색 파장에서 $SiO_2$, $Si_{3}N_{4}$ 단일막에 대한 최소 광반사 손실은 각각 $d(SiO_2)=700~750{\AA}$$d(Si_{3}N_{4})=500${\AA}$에서 나타났으며, $SiO_{2}/Si_{3}N_{4}$ 이중막에 대한 최소 광반사 손실은 $d(SiO_{2}/Si_{3}N_{4})=750{\AA}/(180~200){\AA}$에서 나타났다.

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알콕사이드로부터 Si-Al-O-N계 분말합성 I. 알콕사이드로부터 Si3N4와 $\beta$-Sialon 초미분말 합성 (Synthesis of Powder of the System Si-Al-O-N from Alkoxides I. Synthesis of Si3N4 and $\beta$-Sialon Ultrafine Powders from Alkoxides)

  • 이홍림;유영창
    • 한국세라믹학회지
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    • 제24권1호
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    • pp.23-32
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    • 1987
  • Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

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반도성 $BaTiO_3$ 세라믹스의 미세구조 및 PTCR 특성에 미치는 $Si_3N_4$ 첨가효과 (Effect of $Si_3N_4$ Addition on the Microstructure and PTCR Characteristics in Semiconducting $BaTiO_3$ Ceramics)

  • 김준수;정윤해;이병하
    • 한국세라믹학회지
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    • 제31권10호
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    • pp.1089-1098
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    • 1994
  • The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

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S${i_3}{N_4}$-BN복합재료의 제조 및 열적 특성 (Processing and Thermal Properties of S${i_3}{N_4}$-BN Composites)

  • 이오상;박희동;이재도
    • 한국재료학회지
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    • 제3권4호
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    • pp.381-387
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    • 1993
  • ${Si_3}{N_4}$와 BN의 선택적 산화반응과 질소분위기 소결에 의하여 $Si_2N_2O$로 결합된$Si_3N_4-BN$복합재료를 개발하였으며, 이때 산화반응 온도와 CaO의 첨가가 $Si_2N_2O$의 생성에 미치는 영향을 고찰하였다. $Si_2N_2O$상이 도입된 $Si_3N_4-BN$복합재료는 내열충격성 및 용강에 대한 내침식성이 우수하여 연속제강새안의 부품인 break ring등의 소재로 사용될 수 있다.

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고온 내화물 응용을 위한 질화규소철 (Ferro-Si3N4)의 분해거동 (Decomposition Behavior of Ferro-Si3N4 for High Temperature Refractory Application)

  • 최도문;이진석;최성철
    • 한국세라믹학회지
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    • 제43권9호
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    • pp.582-587
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    • 2006
  • Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

폴리머 Precursor를 이용한 in-situ 나노 복합체의 제조 : I. 질화규소 표면에서의 $SiO_2$ 피막형성에 따른 폴리머의 흡착거동 (Fabrication of in-situ Formed Namo-Composite Using Polymer Precursor : I. Adsorption Behavior of Polymer Followed $SiO_2$ Surface formation onto Silicon Nitride Surface)

  • 정연길;백운규
    • 한국세라믹학회지
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    • 제37권3호
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    • pp.280-287
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    • 2000
  • Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

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