• 한국공작기계학회논문집
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• 제10권6호
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• pp.78-84
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• 2001

In the present study, SiCSi-$Si_3 N_4$-SiC ceramic composites that contained up to 30 wt% of dispersed SiC particles were fabricat-ed cia hot-pressing with an oxynitride glass. The microstructure, the mechanical properties and the cutting performance of resulting ceramic composites were investigated. By fixing the composition as $Si_3 N_4$-20wf%SiC, the effect of sintering time on the microstructure, the mechanical properties and the cutting performance were also investigated. The longer sir-tering time is, the bigger the grain size of SiC is. The fracture toughness(-$K_k$) of the $Si_3 N_4$-SiC ceramic composites increased with the increase of gain size, while the flexural strengthh($\sigma$) decreased. For machining SCM440, the insert with 20wt%r SiC sintered for 8 hours showed the longest tool life while the insert with 20wt% SiC sintered for 12 hours showed the longest tool life for machining gray cast iron.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.151-151
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• 2001

• 한국세라믹학회지
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• 제28권3호
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• pp.189-196
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• 1991

Si(OC2H5)4, commercial AlN and Y2O3 powder were used as the precusor of Si3N4, AlN, Y2O3, respectively. After Si3N4 powder was synthesized by carbothermal reduction and nitridation at 135$0^{\circ}C$ for 13h in N2 atmosphere, characteristics of synthesized powder and the ceramics sintered at 178$0^{\circ}C$ for 1h under 30MPa were investigated. In order to evaluate the reliability of sintered body, Weibull modulus was investigated. Premixing of carbon black as a reduction agent had no effect on Si(OH)4 formation, and Si3N4 powder synthesized from Si(OC2H5)4 was $\alpha$-Si3N4 single phase. Mechanical properties of sintered body were measured as follows : flexural strength ; 750MPa, fracture toughness ; 3.71Mn/3/2, hardness : 17.4GPa, thermal shock resistence temperature ; $600^{\circ}C$. Flexural strength at room temperature was 750MPa and was retained up to 110$0^{\circ}C$. The Weibull modulus of sintered body was 10.7.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.412-415
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• 2003

[ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.

• 한국세라믹학회지
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• 제28권1호
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• pp.53-59
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• 1991

The reaction product between Si3N4 and ZrO2 has been studied by heat treatment of Si3N4-Zr(Y)O2 composite in high vacuum(<10-5 torr) and in air at $700^{\circ}C$. ZrN was formed after heat treatment in vacuum and easily oxidized after heat treatment in air. The amount of ZrN is related to the Y2O3 content dissolved in ZrO2. After the heat treatment in air the toughness increased and the spalling due to the oxidation of ZrN in specimen surface was observed. As a result, it is suggested that the formation of ZrN phase in Si3N4-ZrO2 composite enhance the toughness of the composite in an oxidation conditon.

• 새물리
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• 제68권11호
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• pp.1196-1202
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• 2018

고상 반응법을 이용하여 처음으로 $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ 형광체를 제조하고, 제조된 시료들에 대한 결정성 및 광학적 특성을 비교, 분석하였다. 제조된 시료들은 모두 230~530 nm의 넓은 영역에서 효율적인 여기 특성을 보이고 있다. 본 연구에 사용된 시료들 모두 568 nm에서 최대 발광 세기를 보이는데 이는 현재 상용 중인 $YAG:Ce^{3+}$에 비하여 최대 발광 세기가 약 18 nm 장파장 영역으로 이동함을 의미한다. 따라서 450 nm의 빛을 발하는 청색 LED와 결합하면, $YAG:Ce^{3+}$를 사용하여 상용화된 기존의 백색광보다 보다 따듯한 느낌의 백색광원용 형광체로 활용될 수 있으리라 판단한다. 또한 질소의 원료 물질로 사용된 $Si_3N_4$의 분말크기가 마이크론인 경우에 광활성 이온인 $Eu^{2+}$가 첨가되지 않아도 모체발광이 일어난다는 것을 처음으로 알게 되었다.

• 대한기계학회논문집A
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• 제33권7호
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• pp.652-657
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• 2009

Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

• 한국세라믹학회지
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• 제40권9호
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• pp.867-873
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• 2003

$Si_{3}N_{4}$-BN계 기계 가공서 세라믹스를 $1800^{\circ}C$에서 2시간동안 25MPa의 압력하에서 열간 가압소결하여 제조하였다. $Si_{3}N_{4}$ 매트릭스에 판상의 h-BN 첨가량을 5-30 vol%까지 증가함에 따라 굽힘강도는 $Si_{3}N_{4}$ 단미의 1000 MPa에서 720~400 MPa로 감소하였고, 파괴인성도 $Si_{3}N_{4}$ 단미의 7.6MPaㆍ$m^{1/2}$에서 6.5~4.1 MPaㆍ$m^{1/2}$로 감소하였다. $\beta$-$Si_{3}N_{4}$의 결정립 크기와 형상비는 h-BN 첨가에 의해 약간 감소하였다. $Si_{3}N_{4}$ 단미는 절삭시 취성 파괴를 나타내어 절삭이 불가능하였으나, $Si_{3}N_{4}$-BN계 기계 가공서 세라믹스는 파괴가 발생하지 않으면서 절삭이 가능하여, 우수한 기계 가공성을 나타내었다. h-BN 함량이 증가할수록 절삭과 마이크로 드릴링시의 절삭력은 감소하였다.

• 한국세라믹학회지
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• 제49권4호
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• pp.333-336
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• 2012

The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.