• 한국세라믹학회지
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• 제49권2호
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• pp.146-150
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• 2012

The effects of $Al_2O_3$ on the crystallization behavior of glass compositions in the $Na_2O$-CaO-$SiO_2$ system were investigated by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The effect of $Al_2O_3$ content on the mechanical properties, density, phase formation, and microstructures of $Na_2O$-CaO-$P_2O_5$-$SiO_2$ glass ceramics were studied. The thermal parameters of each glass were studied by DTA. The density of the glass ceramic samples was measured by Archimedes' method. It was found that the glass-ceramic containing 2.0 molar percent $Al_2O_3$ had desirable sintering behavior and reached an acceptable density. Phase investigation and micro-structural analysis were performed by XRD and SEM, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• 한국안전학회지
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• 제21권2호
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• pp.35-45
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• 2006

Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

• 한국세라믹학회지
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• 제23권5호
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• pp.25-34
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• 1986

This study was to refined the crystal structure of solid solution to determine the position and amount of Al in diopside and to relate crystal structure changes and properties of solid solution. Single crystals of the solid solution in the system CaO.MgO.$2 SiO_2-Al_2O_3$ were made from the melt with slow cooling and used to refine the structure. The following were obtained. 1. Tetrahedra rotated around axis parallel to the direction which the angle 03-03-03 became small. 2. Tetrahedron became large and regular. Average T-O bond distance increased 0.53 percent. 3. M1 octahedron became small and average M1-O bond distance decreased 1.1 percent. 4, M2 polyhedron became small and average M2-O bond distance decreased 0.37 percent Polythedron was affected not so much compared with any cation site. 5. Distance between metal ions distances between T and oxygens which were coordinated with M2 and meighboring tetrahedron distances between M2 and oxygens which coordinated with M1 and M2 were not changed almost. 6. $Al^{3+}$ substituted 4Mg^{2+}$ and $Si^{4+}$

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.92-97
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• 1999

The mechanical and electrical properties of the hot-pressed and annealed $\beta-Sic$+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3(6:4wt%)$. In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$, gains were observed between $\beta-SiC$ and $ZrB_2$, and the relative density was over 97.6% of the theoretical density. Phase analysis of the composites by XRD revealedmostly of $\alpha$-SiC(6H, 4H), $ZrB_2$, and weakly $\beta-SiC$(15R) phase. The fracture toughness decreased with increasing $Al_2O_3+Y_2O_3$ contents and showed the highest of $6.37MPa.m^{\fraction ane-half}$ for composite added with 4wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity increased with increasing $Al_2O_3+Y_2O_3$contents and showed the lowest of $1.51\times10^{-4}\Omega.cm$ for composite added with $Al_2O_3+Y_2O_3$ additives at $25^{\circ}C$. This reason is the increasing tendency of pore formation according to amount of liquid forming additives $Al_2O_3+Y_2O_3$. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.186-186
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• 2001

• 전기전자학회논문지
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• 제25권1호
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• pp.1-9
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• 2021

본 논문에서는 고전압, 고전류 동작에 적합한 4H-SiC UMOSFET에 대해서 연구하였다. 일반적으로 SiO2는 SiC MOSFET에서 gate dielectric으로 가장 많이 사용되는 물질이다. 하지만 4H-SiC보다 유전 상수 값이 2.5배 낮아서 높은 전계를 갖게 되므로 SiO2/SiC 접합 부분에서 열악한 특성을 갖는다. 따라서 high-k 물질을 gate dielectric으로 적용한 소자를 SiO2를 적용한 소자와 TCAD 시뮬레이션을 통해 전기적 특성을 비교하였다. 그 결과 BV 감소, VTH 감소, gm 증가, Ron 감소를 확인하였다. 특히 온도가 300K일 때, Al2O3와 HfO2의 Ron은 66.29%, 69.49%가 감소하였으며 600K일 때도 39.71%, 49.88%가 감소하였다. 따라서 Al2O3와 HfO2가 고전압 SiC MOSFET의 gate dielectric 물질로써 적합함을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.461-464
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• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 춘계학술발표대회 논문집
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• pp.109-115
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• 2000

In the present study, (10%$Al_2O_3$+5%Si)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, molten Mg was infiltrated into the preform of 10%$Al_2O_3$+5%Si and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast (RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement ($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg matrix for the squeeze cast hybrid composite. Mechanical properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast (15%$Al_2O_3$)/AZ91 Mg composite.