• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1149-1151
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• 1995

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

• 한국정보통신학회논문지
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• 제7권3호
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• pp.468-473
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• 2003

본 연구에서는 박막트랜지스터의 특성 향상을 위하여 강유전성 박막을 게이트 절연층으로 사용하기 위하여 강유전성 박막과 a-Si:H의 계면특성을 조사하였다. 먼저 강유전성 박막 중에 대표적인 SrTiO$_3$를 I-BEAM 증착기로 박막을 형성시켰다. 형성된 박막은 N2 분위기에서 $150^{\circ}C∼600^{\circ}C$로 1시간 ANNEALING하여 전자현미경으로 표면을 측정하였다. SrTiO$_3$의 유전상수는 50∼100 정도였으며 항복전계는 1∼l.5 MV/cm로 매우 우수한 유전특성을 갖고 있었다. 강유전체 박막 위에 a-SiN:H,a-Si:H(n-type a-Si:H) 등을 PECVD로 증착하여 MFNS구조를 형성하였다. 계면특성을 C-V PLOTTER로 측정한 결과 SrTiO$_3$ 박막은 SiN과의 접합이 매우 안정되어 있었고 C-V특성은 SiN/a-Si:H과 유사하였다. 그러나 FERROELECTRIC/a-S:H의 경우가 훨씬 CAPACITANCE 값이 컸으며, 이는 강유전체 박막의 높은 유전상수에 기인 된 것이라 생각된다.

• 한국세라믹학회지
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• 제31권2호
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• Journal of Korean Vacuum Science & Technology
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• 제7권2호
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• 한국진공학회지
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• 제7권3호
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• pp.195-200
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• 1998

본 연구에서는 강유전체 박막의 게이트 산화물로 사용한 $Pt/SrBi_2Ta_2O_9(SBT)/CeO_2/Si(MFS)$와 Pt/SBT/Si(MFS) 구조의 결정 구조 및 전기적 성질 의 차이를 연구하였다. XRD 및 SEM 측정 결과 SBT/$CeO_2$/Si박막은 약5nm정도의 $SiO_2$층 이 형성되었고 비교적 평탄한 계면의 미세구조를 가지는 반면, SBT/Si는 각각 약6nm와 7nm정도의 $SiO_2$층과 비정질 중간상층이 형성되었음을 알 수 있다. 즉 CeO2 박막을 완충층 으로 사용함으로써 SBT박막과 Si기판의 상호 반응을 적절히 억제할 수 있음을 확인하였다. Pt/SBT/$CeO_2/Pt/SiO_2$/와 Pt/SBT/Pt/$SiO_2$/Si구조에서 Polarization-Electric field(P-E) 특 성을 비교해 본 결과 CeO2박막의 첨가에 따라 잔류분극값은 감소하였고 항전계값은 증가하 였다. MFIS구조에서 memory window값은 항전계값과 직접적 관련이 있으므로 이러한 항 전계값의 증가는 MFIS구조에서의 memory window값이 증가할 수 있음을 나타낸다. Pt-SBT(140nm)/$CeO_2$(25nm)/Si구조에서 Capacitance-Voltage(C-V) 측정 결과로부터 동작 전압 4-6V에서 memory wondows가 1-2V정도로 나타났다. SBT박막의 두께가 증가할수록 memory window값은 증가하였는데 memory wondows가 1-2V정도로 나타났다. SBT박막의 두께가 증가할수록 memory window값은 증가하였는데 이는 SBT박막에 걸리는 전압강하가 증가하기 때문인 것으로 생각되어진다. Pt/SBT/$CeO_2$/Si의 누설전류는 10-8A/cm2정도였고 Pt/SBT/Si 구조에서는 약10-6A/cm2정도로 약간 높은 값을 나타내었다.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.377-378
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• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• 한국세라믹학회지
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• 제30권9호
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• pp.775-783
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• 1993

TiO2-SiO2 system anti-reflective(AR) film was prepared to decrease reflectance on the glass surface. The experiments were carried out as fellow, 1) preparation & hydrolysis of TiO2-SiO2 system sols. 2) glass dipping, and 3) drying & heat treatment. We investigated the refractive index and thickness of film with viscosity, zeta-potential of sol, sol concentration, withdrawal speed, drying and heat treatment condition. As a result, we prepared good qualitative Quarter-Half-Quarter type anti-reflective film that had minimum, 0.02% and average reflectance, 0.087% in the visible region.

• 한국진공학회지
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• 제9권3호
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• pp.258-262
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• 2000

$YMnO_3$박막은 고주파 스퍼터를 사용하여 Si(100)과 $Y_2O_3$/si(100)기판에 증착하였다. 증착시에 산소 분압의 조건과 열처리 온도는 YMnO$_3$ 박막의 결정성과 그 메모리 윈도우의 특성에 매우 중요한 영향을 주었다. XRD 측정 결과 산소 분압 0%에서 증착후 $870^{\circ}C$에서 1시간 동안 후열처리한 $YMnO_3$ 박막은 c-축을 따라 매우 잘 배향되었음을 확인하였다. 반면 산소분압 20%에서 Si(100)과 $Y_2O_3$/Si(100) 기판위에 증착된 $YMnO_3$박막의 결정화는 XRD측정 결과 $Y_2$O$_3$ peak가 보이는 것으로 보아 YMnO$_3$박막내에 과잉의 $Y_2O_3$가 c-축으로의 배향을 억제하는 것을 알 수 있다. 특히 산소분압 0%에서 증착한 Pt/$YMnO_3/Y_2O_3$/Si 구조에서의 메모리 윈도우 특성은 c-축으로 잘 배향된 결과로 인해 인가전압 2~12V에서 0.67-3.65V이었으며 이는 $Y_2O_3$/si 기판위에 산소분압 20%에서 증착한 박막 (0.19~1.21V)보다 동일한 인가전압에서 3배 정도의 큰 메모리 윈도우 특성을 보였다.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.