• Tribology and Lubricants
• /
• v.27 no.6
• /
• pp.351-355
• /
• 2011

Al/SiC composites were fabricated by thermal spray process, and the dry sliding wear tests were performed using the various sliding speed of 10, 30, 60 and 90 RPM through 1000 cycles. The applied load was 10 N and radius of wear track was 15 mm. Wear tracks on the Al/SiC composites were investigated using scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDS). In the case of sliding speed of 10 RPM, adhesive wear behavior caused by plastic deformation of composits surface was observed. In the cases of sliding speed of 30, 60, 90 RPM, abrasive wear behavior on the adhered layer formed by debris were observed. Through this study, it was found that the wear behavior of Al/SiC composites was mainly influenced by the sliding speed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.11
• /
• pp.816-820
• /
• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• Polymer(Korea)
• /
• v.32 no.3
• /
• pp.239-245
• /
• 2008

Block copolymers of the general formula $[(-CO-R'-CO-HN-Ar-NH-CO-R'-CO)_xNH(CH_2)_3-(Me_2SiO)_y(CH_2)_3NH_2]_n$, [n=18.00 to 1175.0] where $R'=CH_2CH(CH_2GeCl_3)$;$CH_2CHGeCl_3CH_2$; and $Ar=-C_6H_4$;$-(o.CH_3C_6H_4)_2$;$-o.CH_3OC_6H_4)_2$;$-(o.CH_3C_6H_4)$ were prepared by a polycondensation reaction of polyamide containing a pendant trichlorogermyl group and terminal acid chloride $Cl(-CO-R'-CO-NH-Ar-NH-CO-R'-CO-)_xCl$ with aminopropyl-terminated polydimethylsiloxane $H_2N(CH_2)_3(Me_2SiO)_y-(CH_2)_3NH_2]$, (PDMS). These polymers were characterized by elemental analysis, $T_g$, FT-IR, $^1H$-NMR, solid state $^{13}C$-NMR, and molecular weight determination. The thermal stability of these copolymers was examined using thermal analysis techniques, such as TGA and DSC. Their molecular weights as determined by laser light scattering technique ranged $5.13{\times}10^5$ to $331{\times}10^5\;g/mol$. These polymers display their $T_g$ in the range of 337 to $393^{\circ}C$ with an average decomposition temperature at $582^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.252-255
• /
• 2004

Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

• Journal of the Semiconductor & Display Technology
• /
• v.5 no.1 s.14
• /
• pp.13-16
• /
• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Proceedings of the KIEE Conference
• /
• 1988.11a
• /
• pp.372-375
• /
• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• Journal of Acupuncture Research
• /
• v.18 no.3
• /
• pp.143-153
• /
• 2001

Objective : To investigate the relation to the organs, shu points and mu points. The labeled common locations of the spinal cord and brain were observed following injection of pseudorabies virus(PRV) into the the kidney, UB23 and GB25. Methods : After survival times of 96 hours following injection of PRV, The fifteen rats were perfused, and their spinal cord and brain were frozen sectioned($30{\mu}m$). These sections were stained by PRV immunohistochemical staining method, and observed with light microscope. Results : In spinal cord, PRV labeled neurons projecting to the kidney, BL23 and GB25 were founded in cervical, thoracic, lumbar and sacral spinal segments. Dense labeled areas of cervical segments were overlap in lateral cervical n. and lamina III-V area. Thoracic segments were overlap in lateral spinal n., intermediolateral n. and lamina V-X areas. Lumbar segments were overlap in lamina I-V areas. Sacral segments were overlap in lamina IV, V and X areas. In brain, PRV labeled areas projecting to the kidney, UB23 and GB25 were overlap in the A1 noradrenalin cells/C1 adrenalin cells/caudoventrolateral reticular n./rostroventrolaterai n., raphe obscurus n,, raphe pallidus n., raphe magnus n., gigantocellular reticular n., locus coeruleus, subcoeruleus n., A5 cell group and paraventricular hypothalamic n.. Conclusions : This results suggest that PRV labeled overlap areas of projecting to the kidney may be correlated to shu and mu points related to the kidney. These morphological results provide that organs-shu(transport) and mu(alarm) points interrelationship may be related to the central autonomic pathways.

• Korean Journal of Materials Research
• /
• v.2 no.5
• /
• pp.330-336
• /
• 1992

Four distinctive hot pressed and heat treated S${i_3}{N_4}$ceramics, S${i_3}{N_4}$-8%${Y_2}{O_3}$, S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$, S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$, 그리고 S${i_3}{N_4}$-1% MgO-1% Si$O_2$(in wt%), were prepared and characterized by X-ray diffraction, scanning electron microscopy, image analysis and mechanical tests. The fracture toughness of S${i_3}{N_4}$-8% ${Y_2}{O_3}$specimens containing large elongated grains showed the highest value of about 9.8MPa$m^{1/2}$. Two out of four S${i_3}{N_4}$, ceramics(S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$and S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$) heat treated at 200 $0^{\circ}C$retained the fracture strength of over 900MPa and fracture toughness of over 8.0MPa$m^{1/2}$. Large ${\beta}$-S${i_3}{N_4}$grains having a diameter larger than 1${\mu}$m appeared to contribute to increase in fracture toughness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.377-377
• /
• 2010

FINEMET type nanocrystalline materials synthesized by controlled crystallization of amorphous ribbons[1] exhibit excellent soft magnetic properties making them attractive for technological applications. Present work reports the electronic structure studies of Co-substituted FINEMET to get information on the effect of successive Co substitution on local environment around Fe and Co atom by using near edge x-ray absorption fine structure (NEXAFS) and x-ray magnetic circular dichroism (XMCD) measurements. NEXAFS spectroscopy and XMCD measurements have been carried out at Fe $L_{3,2}$ and Co $L_{3,2}$-edges to investigate the chemical states and electronic structure of FINEMET [$(Fe_{100-x}Co_x)_{78}Si_9Nb_3Cu_1Ba$](0$L_{3,2}$-edge reveal that Fe is in 2+ state and in tetrahedral symmetry with other elements. The magnetic properties exhibiting soft magnetic behavior[2] are discussed on the basis of the electronic structure studied through XMCD.

• Proceedings of the KIEE Conference
• /
• 1989.07a
• /
• pp.662-666
• /
• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.