Fabrication of Various Semiconductor/Metal Structured Nanowires Using Metal Coating

금속 코팅을 통한 다양한 반도체/금속 나노선 제작

  • Park, Byoung-Jun (Department of Electrical Engineering, Korea University) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Korea University) ;
  • Kim, Hyun-Suk (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Jin-Hyong (Department of Electrical Engineering, Korea University) ;
  • Lee, Joon-Woo (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sing (Department of Electrical Engineering, Korea University)
  • Published : 2004.11.11

Abstract

Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

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