• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.73-76
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• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.95-99
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• 2011

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various $N_2/(Ar+N_2)$ flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.

• Bulletin of the Korean Mathematical Society
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• v.54 no.1
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• pp.343-358
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• 2017

Let {$X_i$} be a sequence of stationary ${\alpha}-mixing$ random variables with probability density function f(x). The recursive kernel estimators of f(x) are defined by $$\hat{f}_n(x)={\frac{1}{n\sqrt{b_n}}{\sum_{j=1}^{n}}b_j{^{-\frac{1}{2}}K(\frac{x-X_j}{b_j})\;and\;{\tilde{f}}_n(x)={\frac{1}{n}}{\sum_{j=1}^{n}}{\frac{1}{b_j}}K(\frac{x-X_j}{b_j})$$, where 0 < $b_n{\rightarrow}0$ is bandwith and K is some kernel function. Under appropriate conditions, we establish the Berry-Esseen bounds for these estimators of f(x), which show the convergence rates of asymptotic normality of the estimators.

• Journal of Information Display
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• v.13 no.3
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• pp.97-100
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• 2012

We have conducted two kinds of the so-called charge-compensated aliovalent element substitutions to control the photoluminescence properties of $NaAlSiO_4:Eu^{2+}$ with a special focus on the enhancement of the excitation intensity at 400 nm. The aliovalent element substitutions include cation-cation and cation-anion co-substitutions according to the general formulas $Na_{1-x}M_xAl_{1+x}Si_{1-x}O_4:Eu^{2+}$ and $Na_{1-x}M_xAlSiO_{4-x}N_x:Eu^{2+}$ (M = $Mg^{2+}$, $Ca^{2+}$, and $Sr^{2+}$), respectively. The increase in the relative excitation intensity at 400 nm has been achieved in both types of the co-substitutions. Thus, the present research has demonstrated the effectiveness of the charge-compensated element substitution.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.65.1-65
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• 2003

The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi$\sub$x/O$\sub$y. with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y//Si sample is thermally stable up to 880$^{\circ}C$, but is less stable compared to the ZrO$_2$/SiO$_2$/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y/Si to 925$^{\circ}C$, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of∼13 nm with a dielectric constant of ∼21 and a leakage current of 3.2${\times}$10e-3 A/$\textrm{cm}^2$ at 1.5V. Upon oxygen or ammonia annealing, the formation of SiO$\sub$x/ and SiH$\sub$x/N$\sub$y/O$\sub$z/ at the interface reduced the overall dielectric constants.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.417-422
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• 1997

본 연구에서는 LPCVD, PECVD, ECR plasma CVD방법을 이용하여 x선 노광 공정용 마스크의 투과막재료로써의 실리콘질화막의 증착과 그의 물성에 관하여 실험하였다. X선 노광 마스크용 투과막의 재질로써 요구되는 적정인장응력에 가지는 증착조건으로 실리콘질화막을 1$\mu\textrm{m}$정도의 두께로 증착하였으며 이 조건에서의 물성을 SIMS, XPS, ESR, AFM, spectrophoto-metry를 이용하여 비교 분석하였다. ECR plasma CVD방법으로 얻은 실리콘 질화막은 화학양론적 조성(Si/N=0.75)에 근접하는 막을 얻을 수 있었으며 표면 평활도와 가시광투과도가 가장 우수한 결과를 얻었다. 저온 증착법인 PECVD로 얻은 막은 Si/N비가 약 0.86정도이고 산소와 수소의 불순물함량이 가장 높게 나타났다. SiH$_{2}$CI$_{2}$를 이용한 LPCVD막의 경우는 Si-rich조성을 가지지만 수소 불순물의 함량이 가장 작게 나타났고 표면거칠기는 가장 나쁘게 나타났다. 그러나 위의 방법으로 얻은 실리콘 질화막의 최대 가시광투과도는 633nm파장에서 모두 90%이상의 값을 나타내었고, 또한 표면 평활도도 0.64-2.6nm(rms)로 현재 연구되고 있는 다른 X선 투과막재료보다 월등히 우수한 결과를 보였다.