• Journal of Surface Science and Engineering
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• v.31 no.6
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• pp.334-344
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• 1998

Yew coating pmccss t.o form a surface layer ol CrN phasc on mild steel (A81 1020!, AlSI Hi3, 1Cr-0.5Mo steel (ASTM A213 and Nickrl-base superalloy (Inconel 718) was developed. Surlaces of various alloys t,n.ateii by chromizing for the formation ol Cr diffusion layer was subsequently trcaled by plasma nitriding in order t.o form the hard CrS coating layer on the surfaces. This duplex plasma surface tri-atments of chromizing and plasma nitriding have induced a lormation of a duplex-lrcated surfacr hyer of approximat~ls 70-80 $\mu\textrm{m}$thickncss with a iargcly improved microiiardnrss up to approxiniateW 1500Hv(50gf). The main cause for the lage improvment in the surface hardncss is altribilted to [.he fact that CrN and $Fe_xN$ phases are created successfully by ccliromizins and plasma nilriding treatment. High tenipera1,urc wear resislance of the duplex-treated mild steel and HI3 steels at $600^{\circ}C$ was examined. Comparing the duplex-treated specimens with the specimens treated only by chromizing, the rcsults shovmi that, thc wear volume of the duplex-treated mild skcl and 1113 stcel aSt.er a wear test, at $600^{\circ}C$ were reduced hy a Iactor of 8 and 3, respectively. Characteristics of the CrS phase by duplrx treatment were compared with $CrN_x$,/TEX> film by ion plating and the wear behaviors of CrN film lormed by two different nroccsses arc nea.riy identical.

• Journal of Surface Science and Engineering
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• v.42 no.6
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• pp.251-255
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• 2009

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.287-291
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• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.209-213
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• 2010

This paper describes the fabrication and characteristics of AlN piezoelectric MPG(micro power generator). The micro energy harvester was fabricated to convert ambient vibration energy to electrical power as a AlN piezoelectric cantilever with Si proof-mass. To be compatible with CMOS process, AlN thin film was grown at low temperature by RF magnetron sputtering and micro power generators were fabricated by MEMS technologies. X-ray diffraction pattern proved that the grown AlN film had highly(002) orientation with low value of FWHM(full width at the half maximum, $\theta=0.276^{\circ}$) in the rocking curve around(002) reflections. The implemented harvester showed the $198.5\;{\mu}m$ highest membrane displacement and generated 6.4 nW of electrical power to $80\;k{\Omega}$ resistive load with $22.6\;mV_{rms}$ voltage from 1.0 G acceleration at its resonant frequency of 389 Hz. From these results, the AlN piezoelectric MPG will be possible to suitable with the batch process and confirm the possibility for power supply in portable, mobile and wearable microsystems.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Journal of the Korean Electrochemical Society
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• v.17 no.2
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• pp.86-93
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• 2014

Mesoporous tin oxide (meso-$SnO_2$) with 5 nm mesopore and well-aligned $SnO_2$ nanowire-bundles with 5~7 nm diameters were prepared by template synthesis method. In addition to meso-$SnO_2$, meso-$SnO_2$/$SiO_2$, which has almost the same structure as meso-$SnO_2$ including $SiO_2$ used as the template were prepared by the modification of template synthesis. X-ray diffraction, N2 adsorption-desorption isotherms, transmission electron microscopy observed structures of meso-$SnO_2$ and meso-$SnO_2$/$SiO_2$. Although the meso-$SnO_2$/$SiO_2$ showed some positive evidences to suppress the volume change of meso-$SnO_2$ through cyclic voltammogram, electrochemical impedance spectroscopy, and voltage profiles during cycling, its cycle life was not improved highly to address modified structural effects. Thus, further study might be done to control the nanostructure of meso-$SnO_2$/$SiO_2$ for enhanced cycle performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.624-627
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• 2001

Two kinds of Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$, the sintering samples and zone melting samples, were heat treated under pure Ar at 95$0^{\circ}C$. The substitution of Nd ion for Ba ion in the Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ before and after the heat treatment were investigated by XRD. In order to know the effects of the heat treatment, the T$_{c}$ and J$_{c}$ of samples with the heat treatment and those without the heat treatment by Ar were comparatively studied. The results show that the substitution of Nd for Ba decreased, T$_{c}$, and J$_{c}$ increased after the treatment under Ar at 95$0^{\circ}C$. The Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ samples were oxygenated under pure oxygen at 30$0^{\circ}C$. From the XRD pattern it was found that the sample with x< 0.4 could transfer from tetragonal phase to orthorhombic phase after the oxygenation, but the sample with x>0.4 could not make the phase transition even after a long time oxygenation.ion even after a long time oxygenation.ation.n.ation.ation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.39-39
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• 2009

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.62-62
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• 2009

Electrical properties of SGS-TFT with 5/5 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42 $cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to $100^{\circ}C$. Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and $I_{on/off}$ ratio decreased from $5.05{\times}10^7$ to $6.93{\times}10^5$.