• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Journal of the Korean Applied Science and Technology
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• v.16 no.1
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• pp.105-115
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• 1999

P-type의 단결정 실리콘 위에 $1000{\AA}$의 열산화막을 성장시킨후 $5500{\AA}$의 다결정 실리콘으로 증착된 시료를 가지고 $HBr/Cl_2/He-O_2$ 혼합기체로 식각할 때 시료의 식각 특성에 관한 $H_2-O_2$ 기체함량. RF 전력, 압력에 대한 영향을 XPS(X-ray photoelectron Spectroscopy)와 SEM(Scanning Electron Microscopy)으로 조사하였다. $HBr/Cl_2/He-O_2$ 혼합기체로 식각되는 동안 형성된 다결정 실리콘 식각속도는 $H_2-O_2$ 함량 증가에 따라 증가하였으며 식각잔유물은 RF 전력과 압력변화에 의해 영향은 받지 않는 것으로 나타났으며, 다결정 실리콘 측벽에서의 증착속도는 낮은 RF전력과 높은 압력에서 높게 나타났다. 다결정 실리콘 식각 잔유물의 결합에너지는 안정한 $SiO_2$인 열산화막의 경우보다 높으므로 식각 잔유물은 $SiO_{\chi}({\chi}>2)$의 화합결합을 가지는 산화물과 같은 잔유물로 생각된다.

• Journal of the Korean Chemical Society
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• v.28 no.2
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• pp.86-94
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• 1984

The single crystal ion-selective electrode,$ {\beta}-Ag_3SI/PVC-THF $membrane electrode has showed a linear potential response to the activities of iodide ion (10-1${\sim}$10-7M). The $ {\beta}-Ag_3SI$ membrane electrode was compared with AgI/PVC-THF membrane and copper metal plate membrane electrodes. In order to measure the selectivity coefficient of the electrodes toward $Cl^-$ and $Br^-$, the separation and mixed solution method were employed. The potential-time curve was obtained by the usual immersion technique and pH effect was also examined. The orders of selectivity for $Br^-$, $Cl^-$ and stability of response time are ${\beta}-Ag_3SI/PVC-THF $membrane > AgI/PVC-THF membrane > copper metal plate membrane. These electrodes could be used as indicating electrodes in the potentiometric titration of a single halide and mixed halides with the standard solution of silver nitrate.

• Journal of Microbiology and Biotechnology
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• v.18 no.12
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• pp.1903-1907
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• 2008

Prodigiosin is a natural red pigment with algicidal activity against Cochlodinium polykrikoides, a major harmful red-tide microalga. To increase the yield of prodigiosin production by Hahella chejuensis KCTC 2396, significant medium components were determined using a two-level Plackett-Burman statistical design technique. Among 12 components included in basal medium, $NaHCO_3$, ${Na}_{2}{SiO}_{3}$, ${NH_4}{NO_3}$, ${Na}_{2}{SO}_{4}$ and $CaCl_2$ were determined to be important for prodigiosin production. The medium formulation was finally optimized using a Box-Behnken design as follows: 1% sucrose; 0.4% peptone; 0.1 % yeast extract; and (g/l): NaCl, 20.0; ${Na}_{2}{SO}_{4}$, 9.0; $CaCl_2$, 1.71; KCl, 0.4; and (mg/l): ${H_3}{BO_3}$, 10.0; KBr, 50.0; NaF, 2.0; $NaHCO_3$, 45.0; ${Na}_{2}{SiO}_{3}$, 4.5; ${NH_4}{NO_3}$, 4.5. The predicted maximum yield of prodigiosin in the optimized medium was 1.198 g/l by the Box-Behnken design, whereas the practical production was 1.495 g/l, which was three times higher than the basal medium (0.492 g/l).

• Journal of the Korean Society of Environmental Restoration Technology
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• v.5 no.6
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• pp.43-48
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• 2002

This study was carried out to clarify the change characteristics of stream water quality by land-use of forest from July to September, 2000 in three stands(Pinus densiflora, Castanea crenata (I), Castanea crenata (II) stand) of Jeongpyeong-ri, Jinju-si, Gyeongnam. The mean pH of rainfall results in acid rain of 5.3. The pH of stream water in three stands was high in order of Pinus densiflora (pH 6.59), Castanea crenata (II)(pH 6.53) and Castanea crenata (I) stand(pH 6.47). The electrical conductivity of stream water was high in order of Castanea crenata (I), Pinus densiflora and Castanea crenata (II) stand. Cations contents of three stands in stream water were high in order of $Ca^{2+}$, $Na^{2+}$, $Mg^{2+}$, $K^+$ and ${NH_4}^+$. But anions of stream water in Pinus densiflora stand and Castanea crenata (II) stand were high in order of ${SO_4}^{2-}$, $Cl^-$ and ${NO_3}^-$. In Castanea crenata (I) stand cations of stream water were high in order of ${NO_3}^-$, ${SO_4}^{2-}$ and $Cl^-$. The level of pH, ${NH_4}^+$, ${NO_3}^-$, $Cl^-$ and ${SO_4}^{2-}$ of stream water in Pinus densiflora stand and Castanea crenata (II) stand reached within the level of domestic use standard for drinking water But the level of ${NO_3}^-$ of stream water in Castanea crenata (I) stand was higher than that of domestic use standard. Therefore, non-point sources like forest watersheds which are fertilizer application lands should be taken to the appropriate mitigation measures.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.26-27
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties were investigated for selective electroless nickel plating of Si farers in order to obtain an optimum condition of contact hole filling. According to RCA prosess, p-type si 1 icon (100) surface was cleaned out and activated. The effects of temperture, DMAB concentration, time, and stirring iwere investigated for activation of p-type Si(100) surface. The optimal activation condition obtained was 0.5M HF, 1mM PdCl$_2$, 2mM EDTA, 7$0^{\circ}C$, 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentration, pH, and plating ti me were studied. The optimal plating condition found was 0. 10M NiS0$_4$.$H_2O$, 0.lIM Citrate, pH 6.8, 6$0^{\circ}C$, 30 minutes. The contact resistence of fi]ms wascomparatively low. It took 30 minutes to obtain 1$\mu$m thick film with 8$\mu$M DMAB concentration. The film surface roughness was improved with increasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained with the condition of temperature 6$0^{\circ}C$ and pH 6.8. The micro-victors hardness of film was about 600Hv and was decreased wi th increasing particle size of plating layer.

• Korean Chemical Engineering Research
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• v.56 no.2
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• pp.291-296
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• 2018

Direct synthesis of methylchlorosilanes was developed by Rochow with addition of copper on the silicon surface as a catalyst and many research were followed. Most of research were focused on the increase of reaction activity through addition of promoters and concentrated on the increase of selectivity of DMDC. However, there are very few studies about the reaction mechanism. Although formation of DMDC was explained in literature, formation of other silanes were not mentioned at all. This reseach focused on the explanation about formation of all silanes obtained during direct reaction and TPD. Reaction paths were proposed by means of dissociative adsorption of methyl chloride and spillover of surface Cl and H. Surface silicon sites were considered as $=SlCl_2$ and $=Sl(CH_3)Cl$. The synthesis of all methylchlorosilanes were explained by the adsorption of methyl group on the silicon sites and by the surface diffusion of nearby Cl and H. The proposed reaction mechanism explains the formation of all silanes during the reaction and also during the TPD process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.251-251
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• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.