• Journal of The Korean Society of Grassland and Forage Science
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• v.11 no.3
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• pp.175-181
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• 1991

The purpose of this experiment was to evaluate the effects of shade and levels of N fertilization on the dry matter yield and chemical compositions of orchardgrass grown under floor of chestnut tree. Shading conditions consist of $S_0$, (full light), $S_1$, (about 6OC4 shade) and $S_2$, (about 70% shade). And, nitrogen fertilizer was applied at 3 levels, O($N_0$), 12($N_1$), and 30($N_2$) kg per 10a, respectively. The results are may be summarized as follows: 1. Maximum total dry matter yield of $S_0$, was obtained about 1.28 ton/lOa at $N_2$, level. But, total dry matter yields of N levels in $S_1$, and $S_2$, were decreased about 42-45% compared with $S_0$. 2. The response of the dry matter yield to N fertilization were differences between shading and levels of N. Thus, the dry matter yield of $S_1$, increased almost linear up to about 30 kg/l0a level, while the dry matter yield of S, was increased slightly up to 30 kgIl0a. But. $S_2$, was increased up to 12 kg/lOa and then decreased slightly with N fertilization over the 12 kg/l0a. 3. Average increase in total dry matter yield to N fertilization were 23.85 kg, 7.97 kg and 5.08 kg DM for $S_0$, $S_1$, and $S_2$, respectively. 4. The level of 12 kg N/lOa is the limiting N level to obtain dry matter production under 60-709 shading conditions. 5. The contents of crude protein arid nitrate nitrogen were increased with shading and incremental N fertilization up to 30 kg/l0a. But, water soluble carbohydrate content was decreased greatly with high shading and high levels of N. 6. Nitrate nitrogen content indicated highly significant positive correlation with crude protein, but significant negative correlation with water soluble carbohydrate content. 7. At 30 kg N level with $S_1$, was necessary to exceed the potentially toxic nitrate nitrogen level of 0.20%.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• Communications for Statistical Applications and Methods
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• v.16 no.5
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• pp.841-849
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• 2009

Let {$X_n$, n ${\ge}$ 1} be a negatively associated sequence of identically distributed random variables with mean zeros and positive finite variances. Set $S_n$ = ${\Sigma}^n_{i=1}\;X_i$. Suppose that 0 < ${\sigma}^2=EX^2_1+2{\Sigma}^{\infty}_{i=2}\;Cov(X_1,\;X_i)$ < ${\infty}$. We prove that, if $EX^2_1(log^+{\mid}X_1{\mid})^{\delta}$ < ${\infty}$ for any 0< ${\delta}{\le}1$, then $\lim_{{\epsilon}\downarrow0}{\epsilon}^{2{\delta}}\sum_{{n=2}}^{\infty}\frac{(logn)^{\delta-1}}{n^2}ES^2_nI({\mid}S_n{\mid}\geq{\epsilon}{\sigma}\sqrt{nlogn}=\frac{E{\mid}N{\mid}^{2\delta+2}}{\delta}$, where N is the standard normal random variable. We also prove that if $S_n$ is replaced by $M_n=max_{1{\le}k{\le}n}{\mid}S_k{\mid}$ then the precise rate still holds. Some results in Fu and Zhang (2007) are improved to the complete moment case.

• Journal of the Korean Mathematical Society
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• v.34 no.2
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• pp.321-336
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• 1997

Let S be the Ricci curvature of an n-dimensional compact minimal totally real submanifold M of a quaternion projective space $HP^n (c)$ of quaternion sectional curvature c. We proved that if $S \leq \frac{16}{3(n -2)}c$, then either $S \equiv \frac{4}{n - 1}c$ (i.e. M is totally geodesic or $S \equiv \frac{16}{3(n - 2)}c$. All compact minimal totally real submanifolds of $HP^n (c)$ satisfy in $S \equiv \frac{16}{3(n - 2)}c$ are determined.

• Journal of applied mathematics & informatics
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• v.9 no.1
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• pp.239-252
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• 2002

A sort sequence $S_n$ is sequence of all unordered pairs of indices in $I_n$={1,2,…n}. With a sort sequence $S_n$ = ($s_1,S_2,...,S_{\frac{n}{2}}$),one can associate a predictive sorting algorithm A($S_n$). An execution of the a1gorithm performs pairwise comparisons of elements in the input set X in the order defined by the sort sequence $S_n$ except that the comparisons whose outcomes can be inferred from the results of the preceding comparisons are not performed. A sort sequence is said to be extremal if it maximizes a given objective function. First we consider the extremal sort sequences with respect to the objective function $\omega$($S_n$) - the expected number of tractive predictions in $S_n$. We study $\omega$-extremal sort sequences in terms of their prediction vectors. Then we consider the objective function $\Omega$($S_n$) - the minimum number of active predictions in $S_n$ over all input orderings.

• Journal of applied mathematics & informatics
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• v.28 no.3_4
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• pp.977-986
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• 2010

Let $X_1$, $X_2$, $\cdots$ be identically distributed negatively associated random variables with $EX_1\;=\;0$ and $E|X_1|^3$ < $\infty$. In this paper we prove $lim_{{\epsilon\downarrow}0}\;\frac{1}{-\log\;\epsilon}\sum\limits_{n=1}^\infty\frac{1}{n^2}ES_n^2I\{|S_n|\;{\geq}\;{\sigma\epsilon}n\}\;=\;2$ and $lim_{\epsilon\downarrow0}\;\epsilon^{2-p}\sum\limits_{n=1}^\infty\frac{1}{n^p}$ $E|S_n|^pI\{|S_n|\;{\geq}\;{\sigma\epsilon}n\}\;=\;\frac{2}{2-p}$ for 0 < p < 2, where $S_n\;=\;\sum\limits_{i=1}^{n}X_i$ and 0 < $\sigma^2\;=\;EX_1^2\;+\;\sum\limits_{i=2}^{\infty}Cov(X_1,\;X_i)$ < $\infty$. We consider some results of i.i.d. random variables obtained by Liu and Lin(2006) under negative association assumption.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.4
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• pp.18-23
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• 1976

We have obtained the solution of van der Pol's equation characterized by an arctangent nonlinearity, using the perturbation method by writing periodicity conditions: $$X^{(n)}(2{\pi})-X^{(n)}(0)=0$$ $$X^{(n)'}(2{\pi})-X^{(n)'}(0)=0 (n=0,1,2......)$$ together with the starting condition: $$X^{(n)}(\frac{\pi}{2})=0,\;X^{(n)}'(\frac{\pi}{2})=-R^{(n)}$$. Our results agree with Liapunov's theorem and our calculated value is more similar to Murata's measured value than Murata's calculated value.

• Korean Journal of Mathematics
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• v.20 no.3
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• pp.307-314
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• 2012

Let M be a left R-module and R be a ring with unity, and $S=\{0,2,3,4,{\ldots}\}$ be a submonoid. Then $M[x^{-s}]=\{a_0+a_2x^{-2}+a_3x^{-3}+{\cdots}+a_nx^{-n}{\mid}a_i{\in}M\}$ is an $R[x^s]$-module. In this paper we show some properties of $M[x^{-s}]$ as an $R[x^s]$-module. Let $f:M{\rightarrow}N$ be an R-linear map and $\overline{M}[x^{-s}]=\{a_2x^{-2}+a_3x^{-3}+{\cdots}+a_nx^{-n}{\mid}a_i{\in}M\}$ and define $N+\overline{M}[x^{-s}]=\{b_0+a_2x^{-2}+a_3x^{-3}+{\cdots}+a_nx^{-n}{\mid}b_0{\in}N,\;a_i{\in}M}$. Then $N+\overline{M}[x^{-s}]$ is an $R[x^s]$-module. We show that given a short exact sequence $0{\rightarrow}L{\rightarrow}M{\rightarrow}N{\rightarrow}0$ of R-modules, $0{\rightarrow}L{\rightarrow}M[x^{-s}]{\rightarrow}N+\overline{M}[x^{-s}]{\rightarrow}0$ is a short exact sequence of $R[x^s]$-module. Then we show $E_1+\overline{E_0}[x^{-s}]$ is not an injective left $R[x^s]$-module, in general.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• Bulletin of the Korean Mathematical Society
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• v.30 no.1
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• pp.65-70
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• 1993

In this paper we will extend some notions of bounded linear operators to some unbounded linear operators. Let H be a complex separable Hilbert space and let B(H) denote the algebra of bounded linear operators. A closed densely defind linear operator S in H, with domain domS, is called subnormal if there is a Hilbert space K containing H and a normal operator N in K(i.e., $N^{*}$N=N $N^*/)such that domS .subeq. domN and Sf=Nf for f .mem. domS. we will show that the Radjavi and Rosenthal theorem holds for some unbounded subnormal operators; if $S_{1}$ and $S_{2}$ are unbounded subnormal operators on H with dom $S_{1}$= dom $S^{*}$$_{1}$ and dom $S_{2}$=dom $S^{*}$$_{2}$ and A .mem. B(H) is injective, has dense range and $S_{1}$A .coneq. A $S^{*}$$_{2}$, then $S_{1}$ and $S_{2}$ are normal and $S_{1}$.iden. $S^{*}$$_{2}$.2}$.X>.