• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• 한국미생물·생명공학회지
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• 제25권2호
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• pp.229-234
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• 1997

Shizandra chinensis(SC) and Pinus regida(PR) showed antimicrobial activity against 3 strains(B-5, D-1, A-1) of lactic acid bacteria(LAB) isolated from kimchi among eight kinds of plant extracts such as Shizandra chinensis, Phellodendron amurense, ornus officinalis, Pinus regida, Allium tuberosum, Machilus thunbergii, Cyperus rotundus and Schizonepeta tenuifloia. The growth of LAB was inhibited apparently in modified MRS broth containing 1% Schizandra chinensis at $35^{\circ}C$. Pinus regida showed weaker inhibitory effect on the growth of isolated LAB than Shizandra chinensis. pH of SC added kimchi did not change greatly compare with control during 25 days of fermentation. Degree of titratable acidity change and ratio of reducing sugar utilization in control were more higher than in SC added kimchi during fermentation. Growth of total bacteria and lactic acid bacteria was inhibited about 1 to 2 $log_10$ cycle by addition of SC extracts during kimchi fermentation for 10 days at $10^{\circ}C$. Fermentation of kimchi was delaved about 5 to 7 days by addition of 1 or 2% of SC. extract, but sensory quality (falvor, taste and overall acceptability) of SC added kimchi was lower than that of control (p>0.05).

• 한국진공학회지
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• 제6권4호
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• pp.359-363
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• 1997

Power를 40W로 고정하고 시간을 5~120초간 변화시켜 아르곤 플라즈마로 처리시킨 n-GaAs(100)의 특성을 photoreflectance(PR) 측정으로 조사하였다. 아르곤 플라즈마 처리시 간을 증가시킴에 따라 Eo피크의 세기는 처리시간이 5초일 때 최소로 관측되었으며, 이때 표 면전기장 ($E_0$), 순수 캐리어농도(ND-NA) 및 표면상태밀도($Q_ss$)는 각각 $1.05\times10^5\textrm{V/cm},1.31\times10^{17}\textrm{cm}^{-3}$및 $1.64\times10^{-7}\textrm{C/cm}^2$로 이 값들은 bulk 시료에 비해 약 57.1, 81.4 및 56.9% 감소하였다. 반면에 5초일 때 compensation center 농도 ($N_A$)는 $5.75\times10{17}\textrm{cm}^{-3}$로 최대였다. 그리고 아르곤 플라즈마 처리시 유발된 결함들의 침투깊이는 표면에서 약450$\AA$정도였다.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제21권2호
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• pp.89-107
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• 2017

In this paper, we have proposed a modified Marker-And-Cell (MAC) method to investigate the problem of an unsteady 2-D incompressible flow with heat and mass transfer at low, moderate, and high Reynolds numbers with no-slip and slip boundary conditions. We have used this method to solve the governing equations along with the boundary conditions and thereby to compute the flow variables, viz. u-velocity, v-velocity, P, T, and C. We have used the staggered grid approach of this method to discretize the governing equations of the problem. A modified MAC algorithm was proposed and used to compute the numerical solutions of the flow variables for Reynolds numbers Re = 10, 500, and 50000 in consonance with low, moderate, and high Reynolds numbers. We have also used appropriate Prandtl (Pr) and Schmidt (Sc) numbers in consistence with relevancy of the physical problem considered. We have executed this modified MAC algorithm with the aid of a computer program developed and run in C compiler. We have also computed numerical solutions of local Nusselt (Nu) and Sherwood (Sh) numbers along the horizontal line through the geometric center at low, moderate, and high Reynolds numbers for fixed Pr = 6.62 and Sc = 340 for two grid systems at time t = 0.0001s. Our numerical solutions for u and v velocities along the vertical and horizontal line through the geometric center of the square cavity for Re = 100 has been compared with benchmark solutions available in the literature and it has been found that they are in good agreement. The present numerical results indicate that, as we move along the horizontal line through the geometric center of the domain, we observed that, the heat and mass transfer decreases up to the geometric center. It, then, increases symmetrically.

• Asian Pacific Journal of Cancer Prevention
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• 제14권7호
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• pp.4151-4155
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• 2013

Background: To compare response evaluation criteria in solid tumours (RECIST) and volumetric evaluation (VE) for colorectal cancer with liver-limited metastasis. Patients and Methods: VE of liver metastases was performed by manual contouring before and after chemotherapy on 45 pairs of computed tomography (CT) images in 36 patients who suffered from metastatic colorectal cancer (mCRC) with liver metastasis only. Cohen kappa was used to compare the agreement between VE and RECIST. Pearson correlation was performed for their comparison after cubic root transformation of the aggregate tumor volumes. Logistic regression was done to identify clinical and radiographic factors to account for the difference which may be predictive in overall response (OR). Results: There were 16 partial response (PR), 23 stable disease (SD) and 6 progressive disease (PD) cases with VE, and 14 PR, 23 SD and 8 PD with RECIST. VE demonstrated good agreement with RECIST (${\chi}$=0.779). Discordant objective responses were noted in 6 pairs of comparisons (13.3%). Pearson correlation also showed excellent correlation between VE and RECIST ($r^2$=0.966, p<0.001). Subgroup analysis showed that VE was in slightly better agreement with RECIST for enlarging lesions than for shrinking lesions ($r^2$=0.935 and $r^2$=0.780 respectively). No factor was found predictive of the difference in OR between VE and RECIST. Conclusions: VE exhibited good agreement with RECIST. It might be more useful than RECIST in evaluation shrinking lesions in cases of numerous and conglomerate liver metastases.

• 한국식품위생안전성학회지
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• 제27권4호
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• pp.432-441
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• 2012

Wild type Listeria monocytogenes 균주에 오염된 돈육으로부터 다른 돈육, 컨베이어벨트, 스테인리스 스틸로 일정시간(30, 60, 120분)동안 접촉시킨 후 $5^{\circ}C$와 $10^{\circ}C$에서 각각의 전이율을 조하였다. $5^{\circ}C$에서 돈육에서 돈육으로 L. monocytogenes의 평균 전이율은 30분에서 120분으로 시간이 지남에 따라 0.02%에서 0.42%로 증가하였고, 평균 전이율은 0.284%로 나타났다. 돈육에서 컨베이어 벨트와 스테인리스 스틸로의 평균 전이율은 30분 후 각각 0.05%, 0.002%의 전이율을 나타냈으나 120분 후에는 더욱 감소하여 0.013%, 0.0003%를 나타내었다(p < 0.05). 두 조건 모두 30분에서 가장 높은 전이율을 보였으나 120분 후에는 감소하였다. $10^{\circ}C$에서 돈육, 컨베이어벨트, 스테인리스 스틸 모두 60분에서 가장 높은 전이율을 나타냈지만 120분에서는 감소하였다. 반면에 식품접촉면에서 돈육으로의 전이율은 돈육에서 식품접촉면으로의 전이율 보다 높게 나타났다(p < 0.01). 시간대별로는 30분이 가장 높았으며, 시간의 경과에 따라 감소하였고 컨베이어벨트가 스테인리스 스틸보다 전이율이 높았다(p < 0.05). 상기의 결과로부터 돈육 공정과정의 오염원에 대한 미생물학적 계량모델을 제시하여 예측모델을 검증한 결과, 대부분의 전이율 예측모델이 신뢰도가 높게 나타났으며, 개발된 예측 모델은 교차오염 발생을 예방할 수 있을 것으로 기대된다.

• 대한화학회지
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• 제44권2호
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• pp.95-101
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• 2000

2-hydroxy-3-hydroxymethy1-5-methylbenzaldehyde(HHMMB)와 ethylenediamine 혹은 1,3-dia-minopropane의 축합반응에 의해 6-배위 칸막이 리간드, $H_4L[A]$와 $H_4L[B]$를 각각 얻은 후에 거대비고리 리간드 착물, $Cu(H_2L[A]).H_2O$, $Cu(H_2L[B]).H_2O$, CuFe(L[A]($NO_3$).$4H_2O$, CuFe(L[B])($NO_3$).$4H_2O$, [$CuGd(H_2L[A])(NO_3)_2](NO_3).2CH_3OH$, [CuGd($H_2L$[B])($NO_3)_2$]($NO_3).2CH_3OH를 합성하였다. 2,6-diformyl-p-clesol (DFPC)로부터 합성한 Ln-거대고리([20]DOTA)착물,[Ln([20]DOTA)($NO_3)(H_2O)$]($NO_3$)2.$xH_2O${Ln(III)=Pr, Sm, Gd, Dy를 methanol 용매에 2일 정도 정치함으로써 [Ln([20]DOTA)($NO3$)($CH_3OH)]^{2+}$을 얻을 수 있다. 이 lanthanide-[20]DOTA착물에서 배위된 $CH_3OH$이 주게원자가 N 혹은 O인 두자리 보조리간드, $L_a$(=o-phenylenediamine,1,10-phenanthroline, ethylenediamine,oxalic acid, malonic acid, acethyl-acetone에 의해 치환될 때 평형상수(K)를 $25^{\circ}C\;{\mu}=0.1M\;NaClO_4$ 에서 분광학적 방법으로 결정하였다. 보조리간드의 $pK_a$는 o-Phenylenediamine < 1,10-ptlenanthroline < ehylenediamine,oxalic acid < malonic acid < acethylacetone이며, 이때 평형상수, K는 ethylenediamine < 1,10-phenanthroline < o-phenylenediamine,acethylacetone < malonic acid < oxalic acid 경향으로 변하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.153-158
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• 2003

This thesis deal with ferroelectric and ferromagnetic materials. PZT/Ferrite ceramics were made by the making process using PZT powder and garnet ferrite powder. PZT and ferrite are mixed as much 90%-10%, 50%-50%, and so on. After making samples, we are polishing samples until thickness is 0.1~0.2mm. We measured all kinds of samples in room temperature and applied magnetic field from -4500 to 4500 Oersted and conducted test of magnetical and electrical measurement using VSM and lpC resolution electrometer calibrated with RT66A pulsed tester. From this measurement, we can calculate tunability of these samples using C value obtained from P-E loop. As a result, it was able to measure magnetic characteristic when two matter had each other component ratio, and it was compound. However, it confirmed the possibility that was able to have ferroelectric characteristic with you in PZT 90% and ferrite 10%. Therefore, If this thing comes for PZT 50% and ferrite 50% have ferroelectric characteristic as him in a compound sample ore, can use this in an oscillator, supersonic waves detector in addition to a piezoelectric element. It may contribute to multipurpose of an element and demands such as a miniaturization of equipment, efficiency, reduce of a price which can use a characteristic of two components.

• 한국세라믹학회지
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• 제37권2호
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.