• Title/Summary/Keyword: $Pb(Mg_{1/2}Nb_{1/2})O_3$

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Effect of Li2O-Bi2O3 Addition on the Piezoelectric Properties of Pb(Mg1/3Nb2/3)0.65Ti0.35O3 Ceramics (Li2O-Bi2O3 첨가가 Pb(Mg1/3Nb2/3)0.65Ti0.35O3 세라믹의 압전 특성에 미치는 영향)

  • Kim, Jae Hyuk;Kim, Shi Yeon;Choi, Jeoung Sik;Yeo, Dong-Hun;Shin, Hyo-Soon;Nahm, Sahn
    • Journal of Powder Materials
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    • v.26 no.5
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    • pp.405-409
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    • 2019
  • Piezoelectric ceramic specimens with the $Pb(Mg_{1/3}Nb_{2/3})_{0.65}Ti_{0.35}O_3$ (PMN-PT) composition are prepared by the solid state reaction method known as the "columbite precursor" method. Moreover, the effects of the $Li_2O-Bi_2O_3$ additive on the microstructure, crystal structure, and piezoelectric properties of sintered PMN-PT ceramic samples are investigated. The addition of $Li_2O-Bi_2O_3$ lowers the sintering temperature from $1,200^{\circ}C$ to $950^{\circ}C$. Moreover, with the addition of >5 wt.% additive, the crystal structure changes from tetragonal to rhombohedral. Notably, the sample with 3 wt.% additive exhibits excellent piezoelectric properties ($d_{33}=596pC/N$ and Kp = 57%) and a sintered density of $7.92g/cm^3$ after sintering at $950^{\circ}C$. In addition, the sample exhibits a curie temperature of $138.6^{\circ}C$ at 1 kHz. Finally, the compatibility of the sample with a Cu electrode is examined, because the energy-dispersive X-ray spectroscopy data indicate the absence of interdiffusion between Cu and the ceramic material.

Waveguides Fabrication for Optical Integrated Devices Application on Relaxor-ferroelectric $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_3$Single Crystal (완화형 강유전체$Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_3$ 단결정의 광 집적소자 응용을 위한 도파로 제작)

  • Yang, Woo-Seok;Lee, Sang-Goo;Koo, Kyoung-Hwan;Huh, Hyun;Yoon, Dae-Ho;Lee, Han-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.546-547
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    • 2002
  • Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

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Effect of Residual Binder on Grain Growth during Sintering of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$

  • Yun, Jung-Yeul;Jang, Wook-Kyung;Jeon, Jae-Ho;L.Kang, Suk-Joong
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.209-210
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    • 2006
  • Organic binders are usually pre-mixed with ceramic powders to enhance the formability during the shape forming process. These binders, however, must be eliminated before sintering in order to avoid pore formation and unusual grain growth during sintering. The present work was performed to investigate the effects of residual binder on grain growth behavior during sintering of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ piezoelectric ceramics. The microstructures of sintered samples were examined for various thermal processes and atmosphere at debinding. Addition of binder seems to promote abnormal grain growth especially in incompletely debinded regions and to make the grain shape change from corner-rounded to faceted.

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Effect of Electrical Field on the Phase Transformation of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Single Crystals (단결정 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 의 상전이에 미치는 전장의 영향)

  • Lee, Eun-Gu
    • Korean Journal of Materials Research
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    • v.23 no.6
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    • pp.329-333
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    • 2013
  • The structural phase transformations of $0.7Pb(Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) were studied using high resolution x-ray diffraction (HRXRD) as a function of temperature and electric field. A phase transformational sequence of cubic (C)${\rightarrow}$tetragonal (T)${\rightarrow}$rhombohedral (R) phase was observed in zero-field-cooled conditions; and a $C{\rightarrow}T{\rightarrow}$monoclinic $(M_C){\rightarrow}$ monoclinic ($M_A$) phase was observed in the field-cooled conditions. The transformation of T to $M_A$ phase was realized through an intermediate $M_C$ phase. The results also represent conclusive and direct evidence of a $M_C$ to $M_A$ phase transformation in field-cooled conditions. Beginning from the zero-field-cooled condition, a $R{\rightarrow}M_A{\rightarrow}M_C{\rightarrow}T$ phase transformational sequence was found with an increasing electric field at a fixed temperature. Upon removal of the field, the $M_A$ phase was stable at room temperature. With increasing the field, the transformation temperature from T to $M_C$ and from $M_C$ to $M_A$ phase decreased, and the phase stability ranges of both T and $M_C$ phases increased. Upon removal of the field, the phase transformation from R to $M_A$ phase was irreversible, but from $M_A$ to $M_C$ was reversible, which means that $M_A$ is the dominant phase under the electric field. In the M phase region, the results confirmed that lattice parameters and tilt angles were weakly temperature dependent over the range of investigated temperatures.

Phase Transformation and Dielectric Properties of <001> 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Single Crystals (<001> 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 단결정의 상변화 및 유전 특성)

  • Lee, Eun-Gu;Lee, Jae-Gab
    • Korean Journal of Materials Research
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    • v.21 no.7
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    • pp.391-395
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    • 2011
  • The structure and dielectric properties of poled <001>-oriented 0.7Pb($Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.

Design and Fabrication of Thin Microwave Absorbers of ITO/Dielectric Structures Used for Mobile Telecommunication Frequency Bands (ITO박막/세라믹유전체 구조의 이동통신 주파수대역용 박형 전파흡수체의 설계 및 제조)

  • Yoon, Yeo-Choon;Kim, Sung-Soo
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.259-265
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    • 2003
  • For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

Dielectric and Piezoelectric Properties of 0.125PMN-0.435PT-0.44PZ Ceramics for Ultrasonic footer Applications (초음파 전동기용 0.125PMN-0.435PT-0.44PZ 세라믹스의 유전 및 압전특성)

  • Kim, Jin-Soo
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.392-399
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    • 1997
  • In this study, the effect of the sintering temperature on the dielectric and piezoelectric properties of 0.5 wt% $MnO_{2}$-doped $0.125Pb(Mg_{1/2}Nb_{2/3})O_{3}-0.435PbTiO_{3}-0.44PbZrO_{3}$ ceramics were investigated aiming at ultrasonic motor applications. From experimental result, it was found that the optimal sintering temperature condition was at $1270^{\circ}C$. The sample sintered at $1270^{\circ}C$ had density of $7.72\;g/cm^{3}$, dielectric constant of 570, dielectric loss of 0.82%, remanent polarization of $19.18{\mu}C/cm^{2}$, coercive field of 9.63 kV/cm, electromechanical coupling factor of radial mode of 55.1%, mechanical quality factor of 886. Temperature and frequency dependence of dielectric constant and dielectric loss of the sintered sample at $1270^{\circ}C$ was also investigated.

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Dielectric Properties of the PFN-PFW-PMN Ceramics for the MLCC (MLCC용 PFN-PFW-PMN 세라믹의 유전 특성)

  • Park, In-Gil;Ryu, Ki-Won;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.747-749
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    • 1992
  • In this study, $0.45Pb(Fe_{1/2}Nb_{1/2})O_3-(0.55-x)Pb(Fe_{2/3}W_{1/3})O_3-xPb(Mg_{1/3}Nb_{2/3})O_3(x=0.20, 0.25, 0.30)$ (x=0.20, 0.25, 0.30) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 950-990[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with the composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. To improve the dielectric loss, specimens doped with $MnO_2$, (0$\sim$2.0 [mol%] ) were fabricated and their dielectric properties were studied. With increasing the amount of $MnO_2$, dielectric constant was decreased and transition temperature was increased. Dielectric constant and dielectric loss of the 0.45PFN-0.30PFW-0.25PMN+$MnO_2$(1.0[mol.%]specimen(970[$^{\circ}C$]) had a good properties of 11,227, 1.3[%].

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Effect of CuO Additions on Microstructures and Piezoelectric Properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ Ceramics (CuO 첨가에 따른 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ 세라믹스의 압전특성과 미세조직의 변화)

  • Jeon, So-Hyun;Kim, Min-Soo;Jeong, Soon-Jong;Kim, In-Sung;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.194-194
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    • 2008
  • Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

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