• 제목/요약/키워드: $O_3$ sensitivity

검색결과 694건 처리시간 0.032초

무연 (Na1,K)NbO3 계 세라믹스를 이용한 AE센서의 감도특성 (Sensitivity Characteristics of Acoustic Emission(AE) Sensor using the Lead-free (Na1,K)NbO3 Ceramics)

  • 류주현;이갑수;홍재일
    • 한국전기전자재료학회논문지
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    • 제20권3호
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    • pp.218-222
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    • 2007
  • In this study, Acoustic emission(AE) sensors were fabricated using lead-free piezoelectric ceramics for prohibiting environmental pollution. Structure of AE sensors were designed as Langvin type air backing form. Here, the piezoelectic element was used as PZT(EC-65)(AE1) and NKN(AE2), respectively. The measured resonant frequency, the maximum sensitivity frequency and sensitivity of AE sensors were as follows ; 143 kHz, 29.4 kHz and 69.3 dB in AE1 and 179 kHz, 29.4 kHz and 66.3dB in AE2, respectively.

Taguchi 실험 계획법에 의한 CH3SH 반도체 악취 가스 센서의 개발 (Development of a Semiconductor Odor Gas Sensor for the Measurement of CH3SH with Taguchi Experimental Design)

  • 김선태;최일환
    • 한국대기환경학회지
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    • 제20권6호
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    • pp.783-792
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    • 2004
  • In this study, a thick-film semiconductor odor gas sensor for the detection of $CH_3$SH was developed using SnO$_2$ as the main substrate and was investigated in terms of its sensitivity and reaction time. In the process of manufacturing the sensor, Taguchi's design of experiment (DOE) was applied to analyze the effects of a variety of parameters, including the substrate, the additives and the fabrication conditions, systematically and effectively. Eight trials of experiments could be possible using the 27 orthogonal array for the seven factors and two levels of condition, which originally demands 128 trials of experiments without DOE. The additives of Sb$_2$O$_{5}$ and PdCl$_2$ with the H$_2$PtCl$_{6}$ ㆍ6$H_2O$ catalyst were appeared to be important factors to improve the sensitivity, and CuO, TiO$_2$, V$_2$O$_{5}$ and PdO were less important. In addition, TiO$_2$, V$_2$O$_{5}$ and PdO would improve the reaction time of a sensor, and CuO, Sb$_2$O$_{5}$, PdCl$_2$ and H$_2$PtCl$_{6}$ㆍ6$H_2O$ were negligible. Being evaluated simultaneously in terms of both sensitivity and reaction time, the sensor showed the higher performance with the addition of TiO$_2$ and PdO, but the opposite results with the addition of CuO, V$_2$O$_{5}$, Sb$_2$O$_{5}$ and PdCl$_2$. The amount of additives were superior in the case of 1% than 4%. H$_2$PtCl$_{6}$ㆍ6$H_2O$ would play an important role for the increase of sensor performance as a catalyst.nce as a catalyst.

Low temperature-operating NiO-CoO butane gas sensors

  • 정동호;최순돈;민봉기
    • 센서학회지
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    • 제17권4호
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    • pp.303-307
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    • 2008
  • $NiO,\;Cu_2O,\;Mn_2O_3$ and $Cr_2O_3$ as p-type semiconductors were added in CoO with 15 wt.% ethylene glycol binder and measured the butane gas sensing characteristics. The highest sensitivity is obtained for the NiO-CoO sensors. CoO-20 at.% NiO sensor with 15 wt.% ethylene glycol binder sintered at $1100^{\circ}C$ for 24 h exhibits high sensitivity of 90 % to 5000 ppm butane gas at the sensor temperature of $250^{\circ}C$, compared to low sensitivities at the low operating temperature for commercial sensors. Response and recovery times are, respectively, within few seconds and 1min in the static flow system, indicating rapid adsorption and desorption of butane gas on sensor surface even at this low temperature.

용액 공정으로 증착된 HfOx 감지막을 갖는 Electrolyte-Insulator-Semiconductor 소자의 두께 의존성 (Thickness Dependence of Solution Deposited HfOx Sensing Membrane for Electrolyte-Insulator-Semiconductor (EIS) Structures)

  • 이인규;조원주
    • 센서학회지
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    • 제22권3호
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    • pp.233-237
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    • 2013
  • We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.

$Fe:LiNbO_3$ 도파로의 제작 및 광굴절 특성 (Fabrication of $Fe:LiNbO_3$ Waveguides and Their Photorefractive Properties)

  • 강기형
    • 한국광학회지
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    • 제4권1호
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    • pp.108-113
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    • 1993
  • 본 논문에서는 Fe를 내부확산하여 도우핑한 $Fe:LiNbO_3$ 광도파로의 광굴절 특성을 연구하였다. 먼저 $Fe:LiNbO_3$의 광굴절 특성을 Fe를 도우핑하지 않은 $LiNbO_3$ 와 비교하여 Fe를 도우핑하였을 때 회절효율과 감도가 향상되는 것을 확인하였다. 또한 분위기 가스를 달리하여 내부확산한 시료의 경우, 순수 아르곤 가스에서 내부확산한 $Fe:LiNbO_3$ 광도파로의 회절효율 및 감도가 가장 크며, 감쇠시간은 가장 짧은 결과를 얻었다. 따라서 Fe 내부확산시 아르곤 가스를 분위기 가스로 사용하는 것이 광굴절 효과를 이용한 광스위치의 좋은 특성을 얻을 수 있다.

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CuO가 첨가된 WO3 후막 가스센서 특성 연구 (Characteristics of CuO doped WO3 Thick Film for Gas Sensors)

  • 유일;이돈규;신덕진;유윤식
    • 전기학회논문지
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    • 제59권9호
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    • pp.1621-1625
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    • 2010
  • Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

저온동작용 $Co_{3}O_{4}$ 부탄가스 감지 소자(I) ($Co_{3}O_{4}$ butane gas sensor operating at low temperature (I))

  • 정진환;최순돈
    • 센서학회지
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    • 제5권6호
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    • pp.7-14
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    • 1996
  • 저온에서 동작 가능한 센서를 개발하기 위하여 $Co_{3}O_{4}$ 후막 소자를 제조하였다. $Co_{3}O_{4}$ 분말은 질산코발트 수용액으로부터 침전하여 얻었으며 binder인 ethylene glycol과 혼합하여 알루미나 기판상에 후막을 인쇄하였다. 제조된 후막에 대해 binder 함량 및 열처리 조건에 따른 부탄가스의 감도 및 회복성을 조사하였다. 동작 온도 $250^{\circ}C$에서 15% ethylene glycol을 함유한 $Co_{3}O_{4}$ 분말을 $300^{\circ}C$ 에서 24시간 동안 열처리한 소자가 부탄가스에 대하여 최고의 감도를 나타내었다. 감도는 500ppm 부탄가스에 대하여 1.1 정도로, 동작 온도 $350{\sim}400^{\circ}C$에서 상용 $SnO_{2}$ 가스 감지 소자의 감도 $0.8{\sim}0.85$와 비교할 때 매우 높았다. 응답 특성은 매우 좋았으나 회복성은 나쁜 것으로 나타났다.

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SnO2 나노 분말의 합성 및 가스 감응 특성 (Gas Sensing Characteristics and Preparation of SnO2 Nano Powders)

  • 이지영;유윤식;유일
    • 한국전기전자재료학회논문지
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    • 제24권7호
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    • pp.589-593
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    • 2011
  • [ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

초미량의 이산화질소가스 감지를 위한 텅스텐산화물계 반도체 가스 센서의 제조 및 $NO_X$ 감응 특성 (The Fabrication and $NO_X$-sensing characteristics of $WO_3$-based semiconductor gas sensor for detecting sub-ppm level of $NO_X$)

  • 이대식;임준우
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.601-604
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    • 1998
  • NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

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DNA 템플릿을 활용한 전이금속 칼코겐화합물 트랜지스터 기반 바이오센서 연구

  • 오애리;강동호;박진홍
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.213.1-213.1
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    • 2015
  • Field effect transistors (FETs)를 기반으로 한 바이오센서는 빠른 응답속도, 저비용, label-free 등을 이유로 각광받고 있다. 그러나 3D 구조를 기반으로 한 FETs 바이오센서의 낮은 sensitivity의 한계점을 지니며, 이를 극복하기 위해 1D 구조의 나노튜브 등을 활용하였으나 여전히 높은 sensitivity의 확보는 힘들다. 최근에는 이러한 문제점을 극복하기 위해 이차원 반도체 물질 중 하나인 Transition metal dichalcogenide (TMD)를 이용하여, 700 이상의 sensitivity를 지니는 pH센서 및 100 이상의 sensitivity를 지니는 바이오센서가 보고되었다. 하지만 이보다 더 높은 정확성 및 반응성을 높이기 위한 연구는 부족한 실정이다. 우리는 DNA 템플릿을 이용하여, TMD FET 기반 pH 및 바이오센서의 반응성을 극대화시키는 연구를 선보인다. DNA는 7~8정도의 유전상수 (K)를 가지는 물질로 기존 $SiO_2$(K=3.9)보다 높은 유전상수를 가지며 두께를 0.7 nm로 매우 얇게 형성할 수 있는 장점이 있다. 이는 FET 기반 바이오센서의 표면 캐패시턴스를 높여 sensitivity를 극대화할 수 있으며, 기존에 사용된 high-k 기반 바이오센서와 비교하여도 약 10배 이상의 sensitivity 향상을 노릴 수 있다. 또한, TMD 물질로 우리는 $WSe_2$를 선택하였으며, pH 용액의 receptor로써 우리는 3-Aminopropyltriethoxysilane (APTES)를 활용하였고, 템플릿으로 사용된 DNA는 DX tile 및 Ring type의 두 가지를 사용하였다. 추가로, DNA의 phosphate backbone을 중성화시키고 DNA의 base pairing의 charge 안정화를 위해 구리 이온($Cu^{2+}$) 및 란타넘족($Tb^{3+}$)을 추가하였다. 완성된 바이오센서의 pH 센싱을 위해 우리는 pH 6,7,8의 표준 용액을 사용하였으며, 재현성 및 반복성의 확인하였다.

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