• Title/Summary/Keyword: $O_2/Ar+O_2$

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Electrical and Optical Properties of ZnO : Al Films Prepared by the DC Magnetron Sputtering System (직류 Magnetron Sputter 법으로 제막된 ZnO : Al 박막의 전기광학 특성)

  • 김의수;유세웅;유병석;이정훈
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.799-808
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    • 1995
  • Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

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Characterization of Ga-doped ZnO thin films prepared by RF magnetron sputtering method (RF 마그네트론 스퍼터링법으로 합성된 Ga-doped ZnO 박막의 특성평가)

  • Yun, Young-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.2
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    • pp.73-77
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    • 2021
  • Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.

Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films (가스 센서용 ZnO, SnO2 박막의 이방성 식각을 위한 mask 재료의 식각 선택도 조사)

  • Park, Jong-Cheon;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.164-168
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    • 2011
  • Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.

A Study on the Etching Mechanism of $(Ba, Sr)TiO_3$ thin Film by High Density $BCl_3/Cl_2/Ar$ Plasma ($BCl_3/Cl_2/Ar$ 고밀도 플라즈마에 의한 $(Ba, Sr)TiO_3$ 박막의 식각 메커니즘 연구)

  • Kim, Seung-Bum;Kim, Chang-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.11
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    • pp.18-24
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    • 2000
  • (Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

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A Study on the Etching Characteristics of $CeO_2$ Thin Films using inductively coulped $Cl_2/Ar$ Plasma (유도 결합 플라즈마($Cl_2/Ar$)를 이용한 $CeO_2$ 박막의 식각 특성 연구)

  • 오창석;김창일;권광호
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.29-32
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    • 2000
  • Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

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A Study on the Etching Characteristics of $CeO_2$ Thin Films using inductively coupled $Cl_2$/Ar Plasma (유도 결합 플라즈마($Cl_2$/Ar)를 이용한 $CeO_2$ 박막의 식각 특성 연구)

  • 오창석;김창일;권광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.29-32
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    • 2000
  • Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

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Surface Reactions after the Etching of CeO$_2$ Thin films using Inductively Coupled C1$_2$/CF$_4$/Ar Plasmas (유도결합 C1$_2$/CF$_4$/Ar 플라즈마를 이용한 CeO$_2$ 박막 식각후 표면반응)

  • 이병기;김남훈;장윤성;김경섭;김창일;장의구
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.2
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    • pp.27-31
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    • 2002
  • In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.

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High density plasma etching of novel dielectric thin films: $Ta_{2}O_{5}$ and $(Ba,Sr)TiO_{3}$

  • Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.5
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    • pp.231-237
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    • 2001
  • Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

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A Study of the Etched ZnO Thin Films Surface by Reactive Ion in the Cl2/BCl3/Ar Plasma (Cl2/BCl3/Ar 플라즈마에서 반응성 이온들에 의해 식각된 ZnO 박막 표면 연구)

  • Woo, Jong-Chang;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.10
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    • pp.747-751
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    • 2010
  • In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

An Investigation on the Surface Reactions after the Etching of $CeO_2$ Thin Films using High Denstity Inductively Coupled $C1_2CF_4Ar$Ar Plasmas (고밀도 유도결합 $C1_2CF_4Ar$ 플라즈마를 이용한 $CeO_2$ 박막 식각후 표면반응에 관한 연구)

  • 장윤성;김남훈;김경섭;이병기;엄준철;김태형;장의구
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.05a
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    • pp.255-258
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    • 2002
  • In this study, $CeO_2$thin films were etched with an addition of $Cl_2$gas to $Ar/CF_4$gas mixing in an inductively coupled plasma(ICP) etcher. The surface reactions of the etched $_CeO2$thin films were investigated by X-ray photoelectron spectroscopy(XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$or $CeO_3$compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_{x}$ compounds.

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