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http://dx.doi.org/10.6111/JKCGCT.2011.21.4.164

Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films  

Park, Jong-Cheon (Department of Nano Fusion Technology, Pusan National University)
Cho, Hyun (Department of Nanomechatronics Engineering, Pusan National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.21, no.4, 2011 , pp. 164-168 More about this Journal
Abstract
Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.
Keywords
Etch selectivity; $SnO_2$; ZnO; Mask material; ICP etching; Nano gas sensors;
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