• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.1-6
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• 2000

In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.240-240
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• 2015

본 논문에서는 플라즈마 모델링과 식각 표면 분석을 통해 가스 비율 변화에 따른 $CF_4/C_4F_8/Ar$ 유도결합 플라즈마의 특성과 Si 및 $SiO_2$의 식각 메커니즘에 대해 연구하였다.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.128-133
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• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• Solar Energy
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• v.20 no.2
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• pp.55-65
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• 2000

Better electrical and optical properties of ITO thin films were demanded for the window layer of CdS/CdTe solar cells. To match that demand, an ion beam sputtering system was used for the deposition of ITO thin films. The substrate temperature and ion beam energy were controlled to deposit high quality ITO thin films in two cases of Ar ion sputtering and Ar+$O_2$ ion sputtering. The microstructure changed from domain structure in ITO deposited by Ar ions to grain structure in ITO deposited by Ar+$O_2$ ions. The lowest resistivity of ITO films was $1.5\times10^{-4}{\Omega}cm$ at $100^{\circ}C$ substrate temperature in case of Ar ions sputtering. Transmittance in the visible range was over 80% above $100^{\circ}C$ substrate temperature.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.256-259
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• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.32-36
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• 2014

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.8-14
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• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.494-498
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• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.