• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.141-147
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• 2003

Sputter-deposited Nb-Al-Cr alloys. $3-5{\mu}m$ thick, have been prepared on quartz substrates as oxidation-and sulfidation-resistant materials at high temperatures. The oxidation or the alloys in the $Ar-O_2$ atmosphere of an oxygen partial pressure of 20 kPa follows approximately the parabolic rate law, thus being diffusion controlled. Their oxidation rates are almost the same as or even lower than those ofthc typical chromia-forming alloys. The multi-lavered oxide scales are formed on the ternary alloys. The outermost layer is composed of $Cr_2O_3$, which is"mainly responsible for the high oxidation'resistance of these alloys. In contrast to sputter-deposited Cr-Nb binary alloys reported previously, the inner layer is not porous. TEM observation as well as EDX analysis indicates that the innermost layer is a mixture of $Al_2O_3$ and niobium oxide. The dispersion of $Al_2O_3$ in niobium oxide may be attributable to the prevention of the formation of the porous oxide layer. The sulfidation rates of the present ternary alloys arc higher than those of the sputter-deposited Nb-AI binary alloys, but still several orders of magnitude lower than those of conventional high temperature alloys. Two-layered sulfide scales are formed, consisting of an outer $Al_2S_3$ layer containing chromium and an inner layer composed of $NbS_2$ and a small amount of $Cr_2S_3$. The presence of $Cr_2S_3$ in the inner protective $NbS_2$ layer may be attributed to the increase in the sulfidation rates.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.624-628
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• 1998

The aromatic organic solvents(BTX) were decomposed in the fixed bed reactor packed with a 0.5% $Pt/{\gamma}-Al_2O_3$ catalyst, then, supercritical carbon dioxide(SC-$CO_2$) was used as the reaction media. And the conversion was dependent on the inlet concentration of BTX and the molar density of SC-$CO_2$. The conversion of BTX was decreased with increasing of inlet concentration, and was increased with temperature and pressure. The maximum conversion of benzene was 98.5% at $300^{\circ}C$ and 204.1 atm, and that of toluene and xylene were 82.0 and 76.5%, respectively, at $350^{\circ}C$ and 204.1 atm. The intermediate products of partial oxidation were identified as benzaldehyde, phenol, benzenemethanol, and so on. The BTX can be effectively converted into harmless $CO_2$ and $H_2O$ at appropriate operating condition. Thus, the nontoxic recovery process was suggested as the removal method of BTX.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.657-662
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• 1999

Mn-Ni oxide thin films for NTC thermistor application were sputtered on alumina substrates at $320^{\circ}C$ Effects of various oxygen partial pressures and annealing temperatures on the microstructure, crystal phase, resistivity and B constant were investigated. In general, microstructure of the films deposited was columnar grain structure. After annealing at $700^{\circ}C$, the microstructure was begun to transform to equiaxed grain structure. Most of the phases were mixture of cubic spinel and $Mn_2$$O_3$. As the oxygen concentration increased, the resistivity and B constant were greatly decreased, and these values become low and stable after annealing between $600^{\circ}C$ and $700^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.28 no.3
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• pp.149-154
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• 1984

The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050$^{\circ}C$C and oxygen partial pressures from $1 {\times}10^{-5}\;to\;2{\times}10^{-1}$atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log $Po_2$ are found to be linear at $Po_2$'s of $10^{-5}\;to\;10^{-1}$ atm. The electrical conductivity dependences on $Po_2$ are found to be ${{\sigma}{\propto}Po_2}^{1/6}$at $850{\sim}950^{\circ}C,\;{{\sigma}{\propto}Po_2}^{3/16}$ at $950{\sim}1050^{\circ}C\;and\;{{\sigma}{\propto}Po_2}^{1/7.5}{\sim}{{\sigma}{\propto}Po_2}^{1/8.3}\;at\;650{\sim}800^{\circ}C$, respectively. The defect structures are$O_i{''}$ at $850{\sim}950^{\circ}C$ and $V_M{'''}$ at $950{\sim}1050^{\circ}C$. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.308-313
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• 2005

In this study the electrical conductivity of excess BaO in $BaTiO_3$ was measured to investigate the relationship between defects and solubility in the temperature range of $900^{\circ}C$ to $1300^{\circ}C$ under various oxygen partial pressure. First of all, quenched $BaTiO_3$ powders of various Ba/Ti ratios were analysed by X-ray diffraction to confirm whether second phase is formed or not. As the results, we observed the solubility of BaO in the temperature range of $1200^{\circ}C$ to $1400^{\circ}C$, and it was also found that the conductivity minima move to lower $PO_2$ with increasing excess BaO within solubility limit.

• Journal of Preventive Medicine and Public Health
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• v.25 no.1 s.37
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• pp.34-43
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• 1992

To investigate the effect of hyperoxia on EKG findings and to evaluate the applicability of EKG as noninvasive monitoring index of oxygen toxicity, 38 rabbits were continuously exposed to 6 different conditions-3 hyperbaric oxygenations (HBO-2.5, 3.5 and 5ATA, 100% $O_2$), normobaric oxygenation (NBO,100% $O_2$), hyperbaric aeration (HBA-5ATA, 21% $O_2$) and normobaric aeration (NBA, 21% $O_2$)-for 120 minutes and their EKG and time to dyspnea and convulsion were recorded. Dyspnea and death were observed in exposure conditions of HBO-3.5 and HBO-5 (Positive rate of dyspnea 10%, 100%, death : 10%, 25%, respectively) only, and convulsion in 4 oxygenation groups (NBO;20%, HBO-2.5;20%, HBO-3.5;20%, HBO-5;88%). Abnormal EKG findings included arrhythmia and ST-T changes and the incidences was increasing with doses(partial pressure of oxygen). In addition to EKG change, findings observed during exposure were dyspnea and convulsion in the order of appearance and when non specific ST-T change was accepted as positive(abnormal) finding, the frequency of abnormal EKG was statistically significant(p<0.01), but when it was excluded from positive results, the frequency of EKG change was not significant(p>0.05). These results suggest that the effect of hyperoxia on heart is myocardial ischemia and arrhythmia, that oxygenation more than 3.5ATA causes myocardial damage in 120 minutes exposure, and that EKG is valuable as monitoring index of oxygen toxicity.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.