• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.140-145
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• 2002

We measured the absorption rate of a Nd:YVO$_4$crystal with a thickness of 1 mm and the output power characteristics of a cw Nd:YVO$_4$/KTP laser with respect to the change of wavelength and the polarizations of a tunable Ti:sapphire pump laser with a linewidth of 0.2 nm. In the case of S-polarization (E┴$\pi$) and P-polarization (E∥$\pi$) of a pump laser, the maximum absorption rate of the crystal was 82% at 809.4 nm and 98% at 808.8 nm, and slope efficiencies for the output power of the Nd:YVO$_4$laser (1064 nm) were 43% and 52%, respectively. The maximum Nd:YYO$_4$laser output power of 516 mW was obtained from the P-polarization pump laser of 1000 mW. As a result of an intracavity frequency-doubling, slope efficiency for the output power of the Nd:YVO$_4$/KTP green laker (532nm) was 23% and the maximum output power of 205 mW with the beam quality (M$^2$) of 1.42 was obtained from the P-polarization pump laser of 1000 mW.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.260-264
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• 2002

We developed LD Pumped Nd:$VVO_4$ microchip laser with the cavity length of 1mm. The microchip laser output was 87.5㎽ at the wavelength of 1063.9nm with the input power of 241㎽ at the wavelength of 809nm. The slope efficiency was 40.7% and the threshold input power was 31.1㎽. We have also defined input power limit for the single longitudinal mode operation theoretically. It was 2.5 times larger than that of threshold input intensity. According to the results of simulation, the Nd:YVO$_4$ microchip laser can be operated with the maximum output of 15㎽ for the single longitudinal mode up to the input power of 77.75㎽.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.493-494
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• 2007

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.276-280
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• 2009

A Cr:YAG crystal was used as a saturable absorber for passive Q-switching of a Nd:$YVO_4$ laser which was pumped by a 1-W continuous wave laser diode. The first surface of the Cr:YAG was high-reflection coated for the pump wavelength. The high-reflection coating improved the absorption efficiency of the pump beam in the Nd:$YVO_4$ through double pass absorption. It also prevented pump beam induced partial bleaching of the Cr:YAG. The peak-to-peak pulse fluctuation of passively Q-switched laser output was approximately 4 %. The minimum pulse-width was measured to be 7.11 ns. Also, the average pulse repetition rate was 9 kHz and the maximum output power was 16.27 mW.

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.110-111
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1368-1371
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• 2007

Laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. When the laser ablation was applied in the fabrication of PDP panel, the laser-ablated ITO patterns showed a higher sustaining voltage than that of chemically wet-etched ITO.

• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.167-174
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• 2013

Purpose: This study was conducted to evaluate the roughness and surface alternations of three differently blasted titanium discs treated by $Nd:YVO_4$ Laser irradiation in different conditions. Materials and methods: Thirty commercially pure titanium discs were prepared and divided into three groups. Each group was consisted of 10 samples and blasted by $ZrO_2$ (zirconium dioxide), $Al_2O_3$ (aluminum oxide), and RBM (resorbable blasted media). All the samples were degreased by ultrasonic cleaner afterward. Nine different conditions were established by changing scanning speed (100, 300, 500 mm/s) and repetition rate (5, 15, 35 kHz) of $Nd:YVO_4$ Laser (Laser Pro D-20, Laserval $Korea^{(R)}$, Seoul, South Korea). After laser irradiation, a scanning electron microscope, X-ray diffraction analysis, energy dispersive X-ray spectroscopic analysis, and surface roughness analysis were used to assess the roughness and surface alternations of the samples. Results: According to a scanning electron microscope (SEM), titanium discs treated with laser irradiation showed characteristic patterns in contrast to the control which showed irregular patterns. According to the X-ray diffraction analysis, only $Al_2O_3$ group showed its own peak. The oxidation tendency and surface roughness of titanium were similar to the control in the energy dispersive X-ray spectroscopic analysis. The surface roughness was inversely proportional to the scanning speed, whereas proportional to the repetition rate of $Nd:YVO_4$. Conclusion: The surface microstructures and roughness of the test discs were modified by the radiation of $Nd:YVO_4$ laser. Therefore, laser irradiation could be considered one of the methods to modify implant surfaces for the enhancement of osseointegration.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.8-12
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• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1765-1771
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• 2010

In the case of micro.electro-mechanical system (MEMS) devices, the quality of punched via hole is one of the most important factors governing the performance of the device. The common features that affect the laser micromachining of via holes drilled by using Nd:$YVO_4$ laser are described, and efficient optimization methods to measure them are presented. The analysis methods involving an orthogonal array, analysis of variance (ANOVA), and response surface optimization are employed to determine the main effects and to determine the optimal laser process parameters. The significant laser process parameters were identified and their effects on the quality of via holes were studied. Finally, an experiment in which the optimal levels of the laser process parameters were used was carried out to demonstrate the effectiveness of the optimization method.