• 상하수도학회지
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• 제25권4호
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• pp.605-610
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• 2011

The objectives of this study are to investigate a bromate behaviour in the processes of advanced water treatment system (AWTS: preozonation, coagulator-settler, rapid sand filter, postozonation, biological activated carbon (BAC) beds) and to investigate the effects of ozonation, pH and ammonia nitrogen on bromate (${BrO^-}_3$) formation. As a result, $BrO_3$ was not detected in the processes of the AWTS without ozonation, while it was detected in a preozonated and postozonated water. For $BrO_3$ formation during June to November, the $BrO_3$ concentration of <9.4${\mu}g/L$ was observed in postozonated water, while it was reduced to about 46% by BAC beds. When applied ozone dosage and ozone contact time for influent with $Br^-$ of <0.3mg/L were 0.5-2.0mg/L.min and 10 min., $BrO_3$ concentration increased with increasing ozone dosage. Longer contact time and lower ozone level also was needed to inhibit the formation of $BrO_3$. At ozone dosage of 1.4 mg/L.min, the formation rate of $BrO_3$ increased with increase of pH value. When $NH_4-N$ concentration increased from 0.1mg/L to 0.4mg/L, $BrO_3$ concentration decreased to about 38%. These results revealed that $BrO_3$ concentration increased with increasing Br level, ozone dosage, and pH value, while it decreased with increase of $NH_4-N$ concentration.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국재료학회지
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• 제32권10호
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• pp.435-441
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• 2022

We report the synthesis and gas sensing properties of bare and ZnO decorated TeO₂ nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO₂ NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO₂ NWs with desired phase and morphology. NO₂ gas sensing studies were performed at different temperatures ranging from 50 to 400 ℃ towards 50 ppm NO₂ gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 ℃, while ZnO decorated TeO₂ NWs sensor showed much better sensitivity towards NO₂ relative to a bare TeO₂ NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO₂ NWs sensor was attributed to the formation of ZnO (n)/ TeO₂ (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

• 태양에너지
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• 제8권1호
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• pp.49-56
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• 1988

Thermally treated Korean ilmenite was characterized and used for water splitting to obtain hydrogen by photo-catalytic reaction. Experiments on specific surface area, X-ray diffraction and EDS showed that the formation of FeO, $Fe_2O_3$ and $TiO_2$ ilmenite crystal surface increased the specific surface area with maximum value, phase change of $TiO_2$ at $600^{\circ}C$ and hetrogeneity. The hydrogen evolved in caustic soda solution on these ilmenites indicated that there was a maximum yield point at about $600^{\circ}C$. This point was explained with the change of the surface area due to sintering of newly formed FeO, $Fe_2O_3$ and $TiO_2$, as well as crystal phase change of anatase to rutile at $600^{\circ}C$. Produced hydrogen increased also as the concentration of caustic soda, but become constant at the near 1N solution.

• 한국재료학회지
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• 제30권5호
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• 전자공학회논문지A
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• 제32A권11호
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.524-527
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• 2007

이온 빔 스퍼터법을 이용하여 저속성장으로 동시 증착에 의해 $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) 박막을 제작하였다. Bi 2212 상은 기판온도 $750\sim795^{\circ}C$의 범위에서 나타났으며, $750^{\circ}C$보다 저온 측에서는 Bi 2201의 단일강이 존재하였나. 그러나, 조성과 관계되는 $PO_3$에 대해서 크게 변하지 않았다. 그리고 임계온도(Tc)가 $45\sim90K$ 가지는 c축 배향한 고품질의 Bi 2212 박막을 얻었다. 소수의 박막에서는 소량의 CuO가 불순물로 관찰되었으며, 얻어진 모든 박막에서 $CaCuO_2$의 불순물 상은 관찰되지 않았다.

• 대한화학회지
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• 제29권2호
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• pp.151-157
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• 1985

클로로포름 용액에서 1,10-diaza-4,7,13,16-tetraoxacyclooctadecane(cryptand 22), 1,7-diaza-4,10,13-trioxacyclopentadecane(cryptand 21), 1,12,15-triaza-5,8-dioxa-3,4:9,10-dibenzocycloheptadecane ($N_3O_2$) 및 1,12-diaza-5,8-dioxa-3,4:9,10-dibenzocyclotetradecane ($N_2O_2$)의 분자간 수소결합을 $^1H$-nmr 분광법으로 여러 온도에서 조사하였다. 묽은 용액에서 이 화합물들은 -NH기를 통한 수소결합에 의하여 이합체를 형성한다. 수소결합형성에 대한 평형상수 값의 크기는 cryptand 22 > cryptand 21 > $N_3O_2$ > $N_2O_2$의 순위이었다. 이 평형에는 분자구조의 대칭성과 분자내의 -NH기의 수와 위치가 영향을 미치고 있었다.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.199-203
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• 2004

Superconducting B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin films were prepared by single target DC-magnetron sputtering. And, that was compared with the B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=1～3) thin film fabricated by using the ion beam sputtering. Phase intergrowth among n=2-3, 3-4 and 4-5 phases was observed. The molar fraction of each phase in the mixed crystal of the deposited films was determined by x-ray diffraction analyses and investigated as a function of $O_2$ gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. Also, the thin film surface observation was carried out by atomic force microscope. The images show the average particle size decreases, and the distribution density of particles on the film surface was to increase with lower gas pressures. The fabrication conditions for selective growth of the single n=2, 3 and 4 phases in BiSrC $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin film are discussed.e discussed.ussed.

• Bulletin of the Korean Chemical Society
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• 제25권6호
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• pp.796-800
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• 2004

The structure of [Cu(tpen)]$(ClO_4)_2$ (tpen = N,N,N',N'-tetrakis(2-pyridylmethyl)-1,2-ethanediamine) has been identified by X-ray crystallography. The copper(II) ion is surrounded by two amine N atoms and three pyridine N atoms of the ligand, making a distorted trigonal-bipyramid. Among the six potential N donor atoms (two amine N and four pyridine N atoms), only one pyridine N atom remains uncoordinated. We examined structural changes on addition of $Cl^-$ to $[Cu(tpen)]^{2+}$(1). The addition of $Cl^-$ in methanol resulted in the formation of a novel dinuclear copper(II) complex $[Cu_2Cl_2(tpen)](ClO_4)_2{\cdot}H_2O$. The structure of the dinuclear complex was verified by X-ray crystallography. Each copper(II) ion in the dinuclear complex showed a distorted square planar geometry with two pyridine N atoms, one amine N atom and one $Cl^-$ ion.