• Applied Biological Chemistry
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• v.48 no.4
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• pp.326-330
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• 2005

In the catalytic hydrolysis of 2',3'-cAMP by the Cu(II) complexes of 2,9-(N,N-dimethylethylenediamino)-1,10-phenanthroline (A) and 2,9-(N,N-dimethylethylenediaminomethyl)-1,10-phenanthroline (B) that are designed as a new ligand molecule of artificial DNase, due to the four intramolecular H-bonds forming between amino groups of ligand molecule and phosphoryl group of 2',3'-cAMP. It is anticipated that Cu(II) complexes of (A) and (B) are able to promote a rate that is as much as seventy thousand times faster than the catalytic hydrolysis rate of 2',3'-cAMP by Cu(II) complexes of 2,9-dimethyl-o-phenanthroline.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.31-36
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• 1999

The $CaSiN_2:Eu$ and $CaSiN_2:Tb$ phosphors were synthesized and analyzed to develop new nitride compound phosphors. $Ca_3N_2$, $Si_3N_4$ and $EuF_3$(or $TbF_3$) powders were mixed, cold-pressed, and sintered to synthesize $CaSiN_2:Eu$ and $CaSiN_2:Tb$ phosphors. Photoluminescence(PL) and electroluminescence(EL) characteristics of the synthesized phosphors were measured and found to be similar to general emission spectra of 뗘 and Tb ion, respecticely. Threshold voltage($V_{th)$) and luminance of the $CaSiN_2:Eu$ TFEL device fabricated by sputtering were 90 V and 1.62 $cd/m^2$ at 280 V, respectively. The charge-voltage(Q-V) and transferred charge-phosphor field($Q_t-F_p$) characteristics of the TFEL devices were also measured.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2001.11a
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• pp.187-191
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• 2001

In this paper, the ac breakdown characteristics of Ar/$N_2$and Kr/$N_2$gas mixtures with gas pressure range of 58.8~137.3[kPa] under uniform and non-uniform fields were investigated. Summarizing the experimental results, the breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of pure $N_2$gas. In case of Ar(85%)/$N_2$(15%) and Ar(70%)/$N_2$(30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$(15%) and Kr(70%)/$N_2$(30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times.

• Journal of the Korea Society of Computer and Information
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• v.18 no.8
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• pp.87-93
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• 2013

A baby-step giant-step algorithm divides n by n blocks that possess $m={\lceil}\sqrt{n}{\rceil}$ elements, and subsequently computes and stores $a^x$ (mod n) for m elements in the 1st block. It then calculates mod n for m blocks and identifies each of them with those in the 1st block of an identical elemental value. This paper firstly proposes a modified baby-step giant-step algorithm that divides ${\lceil}m/2{\rceil}$ blocks with m elements applying $a^{{\phi}(n)/2}{\equiv}1(mod\;n)$ and $a^x(mod\;n){\equiv}a^{{\phi}(n)+x}$ (mod n) principles. This results in a 50% decrease in the process of the giant-step. It then suggests a reverse baby-step giant step algorithm that performs and saves ${\lceil}m/2{\rceil}$ blocks firstly and computes $a^x$ (mod n) for m elements. The proposed algorithm is found to successfully halve the memory and search time of the baby-step giant step algorithm.

• Journal of applied mathematics & informatics
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• v.20 no.1_2
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• pp.75-96
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• 2006

Let m, n be positive integers. We denote by R(m,n) (respectively P(m,n)) the class of all groups G such that, for every n subsets $X_1,X_2\ldots,X_n$, of size m of G there exits a non-identity permutation $\sigma$ such that $X_1X_2{\cdots}X_n{\cap}X_{\sigma(1)}X_{/sigma(2)}{\cdots}X_{/sigma(n)}\neq\phi$ (respectively $X_1X_2{\cdots}X_n=X_{/sigma(1)}X_{\sigma(2)}{\cdots}X_{\sigma(n)}$). Let G be a non-abelian group. In this paper we prove that (i) $G{\in}P$(2,3) if and only if G isomorphic to $S_3$, where $S_n$ is the symmetric group on n letters. (ii) $G{\in}R$(2, 2) if and only if ${\mid}G{\mid}\geq8$. (iii) If G is finite, then $G{\in}R$(3, 2) if and only if ${\mid}G{\mid}\geq14$ or G is isomorphic to one of the following: SmallGroup(16, i), $i\in$ {3, 4, 6, 11, 12, 13}, SmallGroup(32, 49), SmallGroup(32, 50), where SmallGroup(m, n) is the nth group of order m in the GAP [13] library.

• Journal of the Korean Society for Heat Treatment
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• v.2 no.4
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• pp.11-18
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• 1989

To investigate the influence of $TiCl_4$, $N_2$ inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of $TiCl_4/N_2/H_2$ by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various $TiCl_4$, $N_2$ inlet fractions. The results showed that the film thickness was increased with $TiCl_4$ inlet fraction. However, while the thickness was increased with $N_4$ inlet fraction under 0.4 the thickness was decreased with increasing $N_2$ inlet fraction over 0.4. The density of deposited films was varied as $TiCl_4$, $N_2$ inlet fraction and its maximum value was about $5.6g/cm^3$. The contents of chlorine were increased with increasing $TiCl_4$ inlet fraction and nearly constant with increasing $N_2$ inlet fraction.

• Korean Journal of Mathematics
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• v.16 no.3
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• pp.323-334
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• 2008

We define injective and projective representations of quivers with two vertices with n arrows. In the representation of quivers we denote n edges between two vertices as ${\Rightarrow}$ and n maps as $f_1{\sim}f_n$, and $E{\oplus}E{\oplus}{\cdots}{\oplus}E$ (n times) as ${\oplus}_nE$. We show that if E is an injective left R-module, then $${\oplus}_nE{\Longrightarrow[50]^{p_1{\sim}p_n}}E$$ is an injective representation of $Q={\bullet}{\Rightarrow}{\bullet}$ where $p_i(a_1,a_2,{\cdots},a_n)=a_i,\;i{\in}\{1,2,{\cdots},n\}$. Dually we show that if $M_1{\Longrightarrow[50]^{f_1{\sim}f_n}}M_2$ is an injective representation of a quiver $Q={\bullet}{\Rightarrow}{\bullet}$ then $M_1$ and $M_2$ are injective left R-modules. We also show that if P is a projective left R-module, then $$P\Longrightarrow[50]^{i_1{\sim}i_n}{\oplus}_nP$$ is a projective representation of $Q={\bullet}{\Rightarrow}{\bullet}$ where $i_k$ is the kth injection. And if $M_1\Longrightarrow[50]^{f_1{\sim}f_n}M_2$ is an projective representation of a quiver $Q={\bullet}{\Rightarrow}{\bullet}$ then $M_1$ and $M_2$ are projective left R-modules.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.2
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• pp.69-74
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• 2010

AlN thin films were deposited by using a two-facing-targets type sputtering system (TFTS), and their deposition characteristics, microstructure and texture were investigated. Total gas pressure was kept constant at 0.4 Pa and the partial pressures of nitrogen, $PN_2$ (($N_2$ pressure)/($Ar+N_2$ pressure)) varied from 0 to 0.4 Pa. The texture of the film cross-sections and surface morphology were observed by field emission scanning electron microscope (FE-SEM). The crystallographic orientation of the films were analyzed by X-ray diffraction (XRD). Deposition of AlN film depends on $N_2$ partial pressure. The best preferred oriented AlN thin films can be deposited at a nitrogen partial pressure of $PN_2$ = 0.52. As-deposited AlN films show preferred orientation and columnar structure, and the grAlN size of AlN films increases with increasing sputtering current.

• Journal of Surface Science and Engineering
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• v.40 no.1
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• pp.39-43
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• 2007

The pure CrN powders oxidized to $Cr_2O_3$ noticeably above $850^{\circ}C$ in air. When these powders were sintered into bulk samples at $1500^{\circ}C$ under 40 atm of $N_2$ pressure, the CrN phase partly changed into the $Cr_2N$ phase, owing to the partial loss of nitrogen from CrN. When the bulk sample was heated at $1000-1200^{\circ}C$ for 100 hr under vacuum, the CrN phase also progressively changed into $Cr_2N$. At the same time, a relatively thin $Cr_2O_3$ layer formed on the bulk sample due to the reaction of chromium with residual oxygen in vacuum.

• Tribology and Lubricants
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• v.4 no.2
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.