• 한국안전학회지
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• 제23권5호
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• pp.54-60
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• 2008

The objective of this study is to obtain the optimal process condition and the maximum decomposition efficiency by measuring the decomposition efficiency, electricity consumption, and voltage in accordance with the change of the process variables such as the frequency, maintaining time period, concentration, electrode material, thickness of the electrode, the number of windings of the electrode, and added materials etc. of the harmful atmospheric contamination gases such as NO, $NO_2$, and $SO_2$ etc. with the plasma which is generated by the discharging of the specially designed and manufactured $TiO_2$ catalysis reactor and SPCP reactor. The decomposition efficiency of the NO, the standard samples, is obtained with the plasma which is being generated by the discharge of the combination effect of the $TiO_2$ catalysis reactor and SPCP reactor with the variation of those process variables such as the frequency of the high voltage generator($5{\sim}50kHz$), maintaining time of the harmful gases($1{\sim}10.5sec$), initial concentration($100{\sim}1,000ppm$), the material of the electrode(W, Cu, Al), the thickness of the electrode(1, 2, 3mm), the number of the windings of the electrode(7, 9, 11turns), basic gases($N_2$, $O_2$, air), and the simulated gas($CO_2$) and the resulting substances are analyzed by utilizing FT-IR & GC.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 한국정보전자통신기술학회논문지
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• 제9권1호
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• pp.120-131
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• 2016

본 논문에서는 back-gate bias 전압인 VNN (Negative Voltage)을 이용하여 5V의 MV (Medium Voltage) 소자만 이용하여 FN (Fowler-Nordheim) tunneling 방식으로 write하는 MTP cell을 사용하여 512비트 MTP IP를 설계하였다. 사용된 MTP cell은 CG(Control Gate) capacitor, TG(Tunnel Gate) transistor와 select transistor로 구성되어 있다. MTP cell size를 줄이기 위해 TG transistor와 select transistor를 위한 PW(P-Well)과 CG capacitor를 위한 PW 2개만 사용하였으며, DNW(Deep N-Well)은 512bit MTP cell array에 하나만 사용하였다. 512비트 MTP IP 설계에서는 BGR을 이용한 voltage regulator에 의해 regulation된 V1V (=1V)의 전압을 이용하여 VPP와 VNN level detector를 설계하므로 PVT variation에 둔감한 ${\pm}8V$의 pumping 전압을 공급할 수 있는 VPP와 VNN 발생회로를 제안하였다.

• Current Applied Physics
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• 제18권12호
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• pp.1540-1545
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• 2018

SiGe alloy is widely used thermoelectric materials for high temperature thermoelectric generator applications. However, its high thermoelectric performance has been thus far realized only in alloys synthesized employing mechanical alloying techniques, which are time-consuming and employ several materials processing steps. In the current study, for the first time, we report an enhanced thermoelectric figure-of-merit (ZT) ~ 1.1 at $900^{\circ}C$ in ntype $Si_{80}Ge_{20}$ nano-alloys, synthesized using a facile and up-scalable methodology consisting of rapid solidification at high optimized cooling rate ${\sim}3.4{\times}10^7K/s$, employing melt spinning followed by spark plasma sintering of the resulting nano-crystalline melt-spun ribbons. This enhancement in ZT > 20% over its bulk counterpart, owes its origin to the nano-crystalline microstructure formed at high cooling rates, which results in crystallite size ~7 nm leading to high density of grain boundaries, which scatter heat-carrying phonons. This abundant scattering resulted in a very low thermal conductivity ${\sim}2.1Wm^{-1}K^{-1}$, which corresponds to ~50% reduction over its bulk counterpart and is amongst the lowest reported thus far in n-type SiGe alloys. The synthesized samples were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy, based on which the enhancement in their thermoelectric performance has been discussed.

• 한국전자통신학회논문지
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• 제15권2호
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• pp.319-326
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• 2020

PRNG(Pseudorandom number generator)는 안전한 온라인 통신을 위한 암호화 키 생성에 있어서 필수적이다. PRNG에 의해 생성되는 비트 스트림은 대칭키 암호 시스템에서 빅 데이터를 효과적으로 암호화할 수 있도록 고속으로 생성되어야 하며 또한 여러 통계적 테스트를 통과할 수준의 랜덤성을 확보해야 한다. CA(Cellular Automata) 기반의 PRNG는 하드웨어로 구현이 용이하고, LFSR기반의 PRNG보다 렌덤성이 우수하다고 알려져 있다. 본 논문에서는 대칭키 암호시스템에서 효과적인 키 수열을 생성할 수 있는 PMLCA(Programmable Maximum Length CA)기반의 PRNG를 설계한다. 제안하는 PRNG는 비선형 제어 방식을 통해 비트 스트림을 생성한다. 먼저 주기가 긴 선형 수열을 생성하는 단일 여원벡터를 갖는 (m,n)-셀 PMLCA ℙ 기반의 PRNG를 설계하고 주기와 생성다항식을 분석한다. 또한 ℙ와 주기가 같으면서 비선형 수열을 생성하는 두 개의 여원벡터를 갖는 (m,n)-셀 PC-MLCA기반의 PRNG를 설계하고 비선형 수열이 출력되는 위치를 분석한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• 대한환경공학회지
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• 제28권2호
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• pp.191-196
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• 2006

유전체장벽방전에 의해 발생된 오존을 배기가스에 주입하면 질소산화물의 주성분인 NO가 빠르게 $NO_2$로 산화된다. 일단 NO가 $NO_2$로 산화되면 다음 단계에서 황화나트륨이나 아황산나트륨과 같은 환원제에 의해 쉽게 $N_2$로 환원될 수 있다. 본 연구에 사용된 환원제들은 $SO_2$도 효과적으로 제거시킬 수 있으므로 $NO_x$와 $SO_2$를 동시에 처리하는 것이 가능하다. 오존처리실과 흡수환원반응기로 구성된 본 연구의 2단계 공정은 모사 배기가스에 포함된 $NO_x$를 95%, $SO_2$를 100% 제거시킬 수 있었다. 환원제인 황화나트륨으로부터 발생되는 황화수소는 강염기인 수산화나트륨을 환원제와 함께 사용함으로써 방지할 수 있었다. $NO_x$와 $SO_2$를 동시에 처리하기 위한 환원제로 $Na_2SO_3$보다 $Na_2S$가 더 우수한 성능을 보여주었다.

• 대한전자공학회논문지SD
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• 제46권9호
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• pp.74-80
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• 2009

본 논문은 싱글의 LC-탱크 전압제어발진기(VCO)를 사용한 $2{\sim}6GHz$의 CMOS 주파수 합성기에 관하여 기술하였다. 광대역에서 동작하는 주파수 합성기 설계를 위해 최적화된 로컬발진기(LO) 신호 발생기를 사용하였다. LO 신호 발생기는 LC-탱크 VCO와 이 신호를 분주하고 혼합하는 방법으로 광대역의 주파수에서 동작하도륵 구현하였다. 주파수 합성기는 3차 1-1-1 MASH 타입의 시그마-델타 모듈레이터(SDM)를 사용한 소수 분주 위상잠금루프(PLL)에 기초로 설계되었다. 제안한 주파수 합성기는 $0.18{\mu}m$ CMOS 공정기술을 사용하여 설계하였고, off-chip 루프 필터를 가지고 $0.92mm^2$의 칩 면적을 차지하며, 1.8V 전원에서 36mW 이하의 전력을 소모한다. PLL은 $8{\mu}s$보다 적은 시간에서 록킹을 완료한다. 위상 잡음은 중심 주파수 신호로부터 1MHz 오프셋에서 -110dBc/Hz보다 작다.

• 한국자동차공학회논문집
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• 제16권4호
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• pp.56-62
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• 2008

A synthetic gas reformed from hydrocarbon-based fuels consists of $H_2$, CO and $N_2$. Hydrogen contained in the synthetic gas is a very useful species in chemical processes, due to its wide flammability range and fast burning speed. The ESGI (Exhaust Synthetic Gas Injection) technology is developed to shorten the light-off time of three way catalysts through combustion of the synthetic gas in the exhaust manifold during the cold start period of SI engines. Before the ESGI technology is applied to the test engine, the authors set a test rig that consists of gas temperature and composition controllers, an exhaust pulse generator and an exhaust manifold with a visualization window, in order to optimize the point and conditions of injection of the synthetic gas. Through measuring burned gas temperatures and taking photographs of synthetic gas combustion at the outlet of the exhaust manifold, the authors tried to find the optimal injection point and conditions. Analysis of burned gas composition has been performed for various $O_2$ concentrations. As a result, when the synthetic gas is injected at the port outlet of the cylinder No. 4 and $O_2$ concentration exceeds 4%, combustion of the synthetic gas is strong and effective in the exhaust manifold.

• The Korean Journal of Physiology and Pharmacology
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• 제21권4호
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• pp.371-376
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• 2017

The caudal subnucleus of the spinal trigeminal nucleus (medullary dorsal horn; MDH) receives direct inputs from small diameter primary afferent fibers that predominantly transmit nociceptive information in the orofacial region. Recent studies indicate that reactive oxygen species (ROS) is involved in persistent pain, primarily through spinal mechanisms. In this study, we aimed to investigate the role of xanthine/xanthine oxidase (X/XO) system, a known generator of superoxide anion ($O_2{^-}$), on membrane excitability in the rat MDH neurons. For this, we used patch clamp recording and confocal imaging. An application of X/XO ($300{\mu}M/30mU$) induced membrane depolarization and inward currents. When slices were pretreated with ROS scavengers, such as phenyl N-tert-butylnitrone (PBN), superoxide dismutase (SOD), and catalase, X/XO-induced responses decreased. Fluorescence intensity in the DCF-DA and DHE-loaded MDH cells increased on the application of X/XO. An anion channel blocker, 4,4-diisothiocyanatostilbene-2,2-disulfonic acid (DIDS), significantly decreased X/XO-induced depolarization. X/XO elicited an inward current associated with a linear current-voltage relationship that reversed near -40 mV. X/XO-induced depolarization reduced in the presence of $La^{3+}$, a nonselective cation channel (NSCC) blocker, and by lowering the external sodium concentration, indicating that membrane depolarization and inward current are induced by influx of $Na^+$ ions. In conclusion, X/XO-induced ROS modulate the membrane excitability of MDH neurons, which was related to the activation of NSCC.