• Journal of the Korean Society of Safety
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• v.23 no.5
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• pp.54-60
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• 2008

The objective of this study is to obtain the optimal process condition and the maximum decomposition efficiency by measuring the decomposition efficiency, electricity consumption, and voltage in accordance with the change of the process variables such as the frequency, maintaining time period, concentration, electrode material, thickness of the electrode, the number of windings of the electrode, and added materials etc. of the harmful atmospheric contamination gases such as NO, $NO_2$, and $SO_2$ etc. with the plasma which is generated by the discharging of the specially designed and manufactured $TiO_2$ catalysis reactor and SPCP reactor. The decomposition efficiency of the NO, the standard samples, is obtained with the plasma which is being generated by the discharge of the combination effect of the $TiO_2$ catalysis reactor and SPCP reactor with the variation of those process variables such as the frequency of the high voltage generator($5{\sim}50kHz$), maintaining time of the harmful gases($1{\sim}10.5sec$), initial concentration($100{\sim}1,000ppm$), the material of the electrode(W, Cu, Al), the thickness of the electrode(1, 2, 3mm), the number of the windings of the electrode(7, 9, 11turns), basic gases($N_2$, $O_2$, air), and the simulated gas($CO_2$) and the resulting substances are analyzed by utilizing FT-IR & GC.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.1
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• pp.120-131
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• 2016

In this paper, a 512b MTP memory IP is designed by using MTP memory cells which are written by the FN (Fowler-Nordheim) tunneling method with only MV (medium voltage) devices of 5V which uses the back-gate bias, that is VNN (negative voltage). The used MTP cell consists of a CG (control gate) capacitor, a TG (tunnel gate) transistor, and a select transistor. To reduce the size of the MTP memory cell, just two PWs (P-wells) are used: one for the TG and the select transistors; and the other for the CG capacitor. In addition, just one DNW (deep N-well) is used for the entire 512b memory cell array. VPP and VNN generators supplying pumping voltages of ${\pm}8V$ which are insensitive to PVT variations since VPP and VNN level detectors are designed by a regulated voltage, V1V (=1V), provided by a BGR voltage generator.

• Current Applied Physics
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• v.18 no.12
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• pp.1540-1545
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• 2018

SiGe alloy is widely used thermoelectric materials for high temperature thermoelectric generator applications. However, its high thermoelectric performance has been thus far realized only in alloys synthesized employing mechanical alloying techniques, which are time-consuming and employ several materials processing steps. In the current study, for the first time, we report an enhanced thermoelectric figure-of-merit (ZT) ~ 1.1 at $900^{\circ}C$ in ntype $Si_{80}Ge_{20}$ nano-alloys, synthesized using a facile and up-scalable methodology consisting of rapid solidification at high optimized cooling rate ${\sim}3.4{\times}10^7K/s$, employing melt spinning followed by spark plasma sintering of the resulting nano-crystalline melt-spun ribbons. This enhancement in ZT > 20% over its bulk counterpart, owes its origin to the nano-crystalline microstructure formed at high cooling rates, which results in crystallite size ~7 nm leading to high density of grain boundaries, which scatter heat-carrying phonons. This abundant scattering resulted in a very low thermal conductivity ${\sim}2.1Wm^{-1}K^{-1}$, which corresponds to ~50% reduction over its bulk counterpart and is amongst the lowest reported thus far in n-type SiGe alloys. The synthesized samples were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy, based on which the enhancement in their thermoelectric performance has been discussed.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.2
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• pp.319-326
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• 2020

PRNGs(Pseudorandom number generators) are essential for generating encryption keys for to secure online communication. A bitstream generated by the PRNG must be generated at high speed to encrypt the big data effectively in a symmetric key cryptosystem and should ensure the randomness of the level to pass through the several statistical tests. CA(Cellular Automata) based PRNGs are known to be easy to implement in hardware and to have better randomness than LFSR based PRNGs. In this paper, we design PRNGs based on PMLCA(Programable Maximum Length CA) that can generate effective key sequences in symmetric key cryptosystem. The proposed PRNGs generate bit streams through nonlinear control method. First, we design a PRNG based on an (m,n)-cell PMLCA ℙ with a single complement vector that produces linear sequences with the long period and analyze the period and the generating polynomial of ℙ. Next, we design an (m,n)-cell PC-MLCA based PRNG with two complement vectors that have the same period as ℙ and generate nonlinear sequences, and analyze the location of outputting the nonlinear sequence.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.2
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• pp.191-196
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• 2006

The injection of ozone, produced by dielectric barrier discharge, into the exhaust gas gives rise to a rapid oxidation of NO that is the main component of nitrogen oxides($NO_x$) in most practical exhaust gases. Once NO is converted into $NO_2$, it on readily be reduced to $N_2$ in the next step by a reducing agent such as sodium sulfide and sodium sulfite. The reducing agents used ca also remove $SO_2$ effectively, which makes it possible to treat $NO_x\;and\;SO_2$ simultaneously. The present two-step process made up of an ozonizing chamber and an absorber containing a reducing agent solution was able to remove about 95% of the $NO_x$ and 100% of the $SO_2$, initially contained in the simulated exhaust gas. The formation of $H_2S$ from sodium sulfide was prevented by using a strong basic reagent(NaOH) together with the reducing agent. The removal of $NO_x$\;and\;SO_2$ was more effective for $Na_2S$ than $Na_2SO_3$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.74-80
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• 2009

This paper describes a $2{\sim}6GHz$ CMOS frequency synthesizer that employs only one LC-tank voltage controlled oscillator (VCO). For wide-band operation, optimized LO signal generator is used. The LC-tank VCO oscillating in $6{\sim}8GHz$ provides the required LO frequency by dividing and mixing the VCO output clocks appropriately. The frequency synthesizer is based on a fractional-N phase locked loop (PLL) employing third-order 1-1-1 MASH type sigma-delta modulator. Implemented in a $0.18{\mu}m$ CMOS technology, the frequency synthesizer occupies the area of $0.92mm^2$ with of-chip loop filter and consumes 36mW from a 1.8V supply. The PLL is completed in less than $8{\mu}s$. The phase noise is -110dBC/Hz at 1MHz offset from the carrier.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.4
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• pp.56-62
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• 2008

A synthetic gas reformed from hydrocarbon-based fuels consists of $H_2$, CO and $N_2$. Hydrogen contained in the synthetic gas is a very useful species in chemical processes, due to its wide flammability range and fast burning speed. The ESGI (Exhaust Synthetic Gas Injection) technology is developed to shorten the light-off time of three way catalysts through combustion of the synthetic gas in the exhaust manifold during the cold start period of SI engines. Before the ESGI technology is applied to the test engine, the authors set a test rig that consists of gas temperature and composition controllers, an exhaust pulse generator and an exhaust manifold with a visualization window, in order to optimize the point and conditions of injection of the synthetic gas. Through measuring burned gas temperatures and taking photographs of synthetic gas combustion at the outlet of the exhaust manifold, the authors tried to find the optimal injection point and conditions. Analysis of burned gas composition has been performed for various $O_2$ concentrations. As a result, when the synthetic gas is injected at the port outlet of the cylinder No. 4 and $O_2$ concentration exceeds 4%, combustion of the synthetic gas is strong and effective in the exhaust manifold.

• The Korean Journal of Physiology and Pharmacology
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• v.21 no.4
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• pp.371-376
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• 2017

The caudal subnucleus of the spinal trigeminal nucleus (medullary dorsal horn; MDH) receives direct inputs from small diameter primary afferent fibers that predominantly transmit nociceptive information in the orofacial region. Recent studies indicate that reactive oxygen species (ROS) is involved in persistent pain, primarily through spinal mechanisms. In this study, we aimed to investigate the role of xanthine/xanthine oxidase (X/XO) system, a known generator of superoxide anion ($O_2{^-}$), on membrane excitability in the rat MDH neurons. For this, we used patch clamp recording and confocal imaging. An application of X/XO ($300{\mu}M/30mU$) induced membrane depolarization and inward currents. When slices were pretreated with ROS scavengers, such as phenyl N-tert-butylnitrone (PBN), superoxide dismutase (SOD), and catalase, X/XO-induced responses decreased. Fluorescence intensity in the DCF-DA and DHE-loaded MDH cells increased on the application of X/XO. An anion channel blocker, 4,4-diisothiocyanatostilbene-2,2-disulfonic acid (DIDS), significantly decreased X/XO-induced depolarization. X/XO elicited an inward current associated with a linear current-voltage relationship that reversed near -40 mV. X/XO-induced depolarization reduced in the presence of $La^{3+}$, a nonselective cation channel (NSCC) blocker, and by lowering the external sodium concentration, indicating that membrane depolarization and inward current are induced by influx of $Na^+$ ions. In conclusion, X/XO-induced ROS modulate the membrane excitability of MDH neurons, which was related to the activation of NSCC.