• 한국세라믹학회지
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• 제40권8호
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• 한국분말재료학회지
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• 제24권6호
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• pp.431-436
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• 2017

SiAlON-based ceramics are some of the most typical oxynitride ceramic materials, which can be used as cutting tools for heat-resistant super-alloys (HRSA). SiAlON can be fabricated by using gas-pressure reactive sintering from the raw materials, nitrides and oxides such as $Si_3N_4$, AlN, $Al_2O_3$, and $Yb_2O_3$. In this study, we fabricate $Yb_{m/3}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$ (m=0.3, n=1.9, 2.3, 2.7) ceramics by using gas-pressure sintering at different sintering temperatures. Then, the densification behavior, phase formation, microstructure, and hardness of the sintered specimens are characterized. We obtain a fully densified specimen with ${\beta}$-SiAlON after gas-pressure sintering at $1820^{\circ}C$ for 90 min. under 10 atm $N_2$ pressure. These SiAlON ceramic materials exhibited hardness values of ~92.9 HRA. The potential of these SiAlON ceramics for cutting tool application is also discussed.

• 한국재료학회지
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• 제9권3호
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• pp.269-273
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• 1999

일반적으로 LPCVD 방법에 의한 다결정 실리콘 박막은 $SiH_4$가스를 열분해하여 증착한다. 본 실험에서는 다결정 실리콘 박막속에 포함된 산소농도를 낮추기 위하여 실리콘 웨이퍼를 반응로 안으로 장착할 때, 20slm의 $N_2$가스를 반응로의 위에서부터 아래로 flow하였으며 박막의 산소농도를 측정하기 위하여 두께가 $1000\AA$인 박막을 증착한 다음 SIMS로 분석한 결과 반응로의 hatch에 있는 짧은 injector를 통하여 20slm의 $N_2$가스를 flow한 경우보다 박막의 산소농도가 ~30배 정도 낮아짐을 알 수 있었다. 긴 injector를 사용하여 증착된 박막의 두께 균일도, particle 및 Rs를 측정하여 박막증착의 재현성이 있음을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.303-304
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• 2008

Al, N-codoped ZnO(ZnO:N,Al) thin films were deposited on n-type Si(100) substrate at $450^{\circ}C$ with various conditions of ambient gas$(N_2:O_2)$ by DC magnetron sputtering method using ZnO:$Al_2O_3$(2wt%) as a target, and then were annealed at 500, 700, $800^{\circ}C$ in $N_2$ gas for one hour. XRD patterns showed that all of the ZnO:N,Al thin films annealed at $80^{\circ}C$ grew with two peaks, which means poor crystallinity of the thin films deposited. Hall effects in Van der Pauw configuration proved that after annealing the films deposited showed low resistivity and high carrier concentration. While the films annealed at $800^{\circ}C$ showed low resistivity of $\sim10^{-2}\Omega$ cm and high carrier concentration of $\sim10^{19}cm^{-3}$.

• Journal of Mechanical Science and Technology
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• 제18권12호
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• pp.2303-2309
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• 2004

Flue gas recirculation (FGR) is a method widely adopted to control NOx in combustion system. The recirculated flue gas decreases flame temperature and reaction rate, resulting in the decrease in thermal NO production. Recently, it has been demonstrated that the recirculated flue gas in fuel stream, that is, the fuel induced recirculation (FIR), could enhance a much improved reduction in NOx per unit mass of recirculated gas, as compared to the conventional FGR in air. In the present study, the effect of FGR/FIR methods on NOx reduction in turbulent swirl flames by using N$_2$ and CO$_2$ as diluent gases to simulate flue gases. Results show that CO$_2$ dilution is more effective in NO reduction because of large temperature drop due to the larger specific heat of CO$_2$ compared to N$_2$ and FIR is more effective to reduce NO emission than FGR when the same recirculation ratio of dilution gas is used.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.188-195
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• 1996

The AlSi etching process using the MERIE type reactor carried out with different process parameters such as C1$_{2}$ and N$_{2}$ gas flow rate, RF power and chamber pressure. The etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. As the N2 gas flow rate is increased, the AlSi etch rate is decreased and uniformity has remained constant within .+-.5%. The etch rate is increased and uniformity is decreased, according to increment of the C1$_{2}$ gas flow rate, RF power and chamber pressure. Selective etching of TEOS with respect to AlSi is decreased as the RF power is increased while it is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, on the other hand, selective etching of photoresist with respect to AlSi is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, it is decreased as the N$_{2}$ gas flow rate is increased.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.21-26
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• 1995

Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

• 한국진공학회지
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• 제7권3호
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• pp.214-220
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• 1998

낮은 평형압력을 가진 TDEAT 증착원을 이용하여 TiN증착을 실시한 실험에서 TiN 증착률에 영향을 주는 인지들에 대하여 연구를 실시하였다. TiN성장률은 bubbler 온도, 증 착온도, 운반기체관의 conductance, 운반기체 종류에 따라 큰 영향을 받고 있었다. 또한 bubbler로 유입되는 운반기체관의 가열에 의하여도 증착률 증가가 적은 범위에서 이루어지 고 있음이 관찰되었다. 이와함께 chamber내로 유입되는 운반관을 $90^{\circ}C$로부터 $120^{\circ}C$로 가열 한 실험에 의하면 운반관 가열이 TiN 성장 증가를 일으키고 있으며, 온도에 대한 TiN 성장 은 약0.2eV의 활성화에너지를 가진 Arrehenius형태로 증가되고 있었다.

• Journal of Welding and Joining
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• 제5권4호
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• pp.12-21
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• 1987

To investigate the suitability of nitrogen gas as an internal purging gas, various properties of GTA welded joints of duplex, 316L stainless steel, Cu-Ni alloy pipe using nitrogen purging gas were evaluated with reference to onew purged with argon gas. Mechanical properties evaluated by the tensile, bending test, and hardness value of welded joints with nitrogen gas purging did not show any difference those with argon gas. General and local corrosion rates of each welded joint prepared by nitrogen gas purging also showed no difference with those prepared by argon gas. Based on the present test results it is confirmed that nitrogen is a suitable purging gas for GTA welding of stainless steels and nonferrous piping systems, which can be used at lower cost instead of argon.

• 한국가스학회지
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• 제24권4호
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• pp.39-47
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• 2020

배기가스 재순환(flue gas recirculation, 이하 FGR)은 질소산화물 저감에 효과적인 연소 기법으로 저공해 연소 분야에 다양하게 응용되고 있다. 이전 연구에 이어서 메탄/공기 대향류 예혼합화염에 FGR 기법 적용 시 나타나는 화염의 특성 변화 및 NOx 생성기구를 파악하기 위한 수치해석이 진행되었다. 배출되는 질소산화물(NOx)은 4가지 주요 반응경로(열적 NO, prompt NO, N₂H 및 N₂O)로 구분하여 배기가스 재순환율에 따른 각 NO 생성률을 상대적으로 나타내었다. 그 결과 열적 NO가 전체 NO 형성에 가장 크게 차지한 반면 N₂H의 영향은 미미하였다. 또한, 열적 NO의 기여를 검토하기 위하여 본 연구에 사용된 반응기구(UC San Diego mechanism)를 수정하여 재순환율 증가에 따른 NO 배출지수(EINO)를 비교하였다.