• Title/Summary/Keyword: $NH_3$gas

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The Realization on GAS Sensor Module for Inteligent Wireless Communication (지능형 무선통신용 가스 센서 모듈 구현)

  • Kim, Hyo-Chan;Weon, Young-Su;Cho, Hyung-Rae
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.11 no.6
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    • pp.123-132
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    • 2012
  • Gas sensors has been used very differently that depending on following purposes; Automotive (exhaust gas, fuel mixture gas, oxygen, particulates), agriculture / food industry (fresh, stored, CO2, humidity, NH3, nitrogen oxide gas, organic gas, toxic gas emitted from pesticides and insecticides), industrial / medical (chemical gas, hydrogen, oxygen and toxic gases), military (chemical weapon), environmental measurements (CO and other air pollution consisting of sulfur and nitrogen gas), residential (LNG, LPG, butane, indoor air, humidity). The types of industrial toxic substances are known about 700 species and many of these exist in gaseous form under normal conditions. he multi-gas detection sensors will be developed for casualties that detect the most important and find easy three kinds of gases in marine plant; carbon dioxide(CO2), carbon(CO), ammonia(NH3). Package block consists of gas sensing device minor ingredient, rf front end, zigbee chip. Develope interworking technology between the sensor and zigbee chip inside a package. Conduct a performance test through test jig about prototype zigbee sensor module with rf output power and unwanted emission test. This research task available early address when poisonous gas leaked from large industrial site and contribution for workers' safety at the enclosed space.

Gas Sensing Characteristics of Ru doped-WO3 Micro Gas Sensors (루테늄이 첨가된 텅스텐 산화물을 이용한 마이크로 가스 센서의 암모니아 가스 감지 특성)

  • Lee, Hoi Jung;Yoon, Jin Ho;Kim, Bum Joon;Jang, Hyun Duck;Kim, Jung Sik
    • Korean Journal of Metals and Materials
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    • v.49 no.5
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    • pp.395-399
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    • 2011
  • In this study, micro gas sensors for ammonia gas were prepared by adopting MEMS technology and using a sol-gel process. Three types of sensors were prepared via different synthesis routes starting with W sol and Ru sol mixture. This mixture was deposited on a MEMS platform and the platform was subsegueny heated to a temperature of $350^{\circ}C$. The topography and crystal structure of the sensing film were studied using FE-SEM and XRD. The response of the gas sensor to $NH_3$ gas was examined at various operating temperatures and gas concentrations. The sensor response increased almost linearly with gas concentration and the best sensing response was obtained at $333^{\circ}C$ for 5.0 ppm $NH_3$ for the specimen prepared by coating $WO_3$ powders with the Ru sol mixture.

Structural Control of the Compound Layers formed during Nitrocarburising in NH3-Air-C3H8 Atmospheres (NH3-Air-C3H8 분위기에서 Nitrocarburisng시 형성된 Compound Layer의 조직제어)

  • Kim, Y.H.;Choi, K.W.
    • Journal of the Korean Society for Heat Treatment
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    • v.8 no.4
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    • pp.289-301
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    • 1995
  • The effect of Air/$C_3H_8$ gas addition on the compound layer growth of steels nitrocarburised in $NH_3+Air+C_3H_8$ mixed gas atmospheres was investigated. It is considered that amount of residual $NH_3$ was varied according to alternation of Air/$C_3H_8$ mixing ratio and volume content. The compound layer formed from nitrocarburising was composed of ${\varepsilon}-Fe_{2-3}$(C, N) and ${\gamma}^{\prime}-Fe_4$(C, N). According as Air/$C_3H_8$ mixing ratio increased, the superficial content of ${\gamma}^{\prime}-Fe_4$(C, N) within the compound layer was increased, at the same time the growth rate of compound layer and porous layer was increased. In the case of alloy steel at the fixed gas composition, the growth rate of compound layer and porous layer was worse than carbon steel and compound layer phase composition structure primarily consisted of E phase. As the carbon content of materials was increasing in the given gas atmospheres, the growth rate of compound layer and porous layer was increased and the superficial content of ${\varepsilon}-Fe_{2-3}$(C, N) within the compound layer was increased.

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Surface Modification of Polytetrafluoroethylene by 1 keV Argon and Hydrogen Irradiated in Nitrogen and Ammonia Gas Environment (질소와 암모니아 존재하에서 1 keV 에너지의 알곤과 수소 이온 조사에 의한 PTFE(polytetrafluoroethylene)의 표면형상 변화연구)

  • Yeu, Dae-Hwan;Kim, Ki-Hwan;Kang, Dong-Yeob;Kim, Joong-Soo;Koh, Seok-Keun;Kim, Hyun-Joo
    • Korean Journal of Materials Research
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    • v.16 no.6
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    • pp.367-372
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    • 2006
  • Polytetrafluoroethylene (PTFE) surface was modified for improving hydrophilicity by ion irradiation in environmental gas of $N_2$ and $NH_3$, respectively. The water contact angle onto the PTFE surface increased from $104{\circ}$ to over $140{\circ}$ by Ar ion irradiation in $N_2$ gas. In the case of $NH_3$ as environmental gas, there were a slight increase of contact angle from ion dose of $1{\times}10^{15}\;to\;5{\times}10^{15}\;ions/cm^2$, and its dramatic decrease to the value of 35o at the conditions of ion dose higher than $1{\times}10^{16}\;ions/cm^2$. It was found from SEM results that the surface morphology of PTFE was changed into one with filament structure after Ar ion irradiation in $N_2$ gas environments. On the contrary, Ar ion irradiation in $NH_3$ gas condition induced the PTFE surface with network structure. Hydrogen ion irradiation resulted in a little change of PTFE surface morphology, comparing with the case of Ar ion irradiation. The water contact angle of hydrogen ion irradiated PTFE surface in reactive gas decreased with increment of ion dose. Hydrogen ion irradiation could improve hydrophilicity with little change of surface morphology. It might be considered from FT-IR results that the improvement in wettability of PTFE surface by ion irradiation in $N_2$ and $NH_3$ gases could be due to the hydrophilic groups of NHx bonds.

Synthesis of Boron-Nitride Film by Plasma Assisted Chemical Vapor Deposition Using $BCl3-NH3-Ar$ Mixed Gas ($BCl3-NH3-Ar$계의 플라즈마화학증착공정을 이용한 질화붕소막의 합성)

  • 박범수;백영준;은광용
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.249-256
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    • 1997
  • The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

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Electrical Conductivity Modulation in TaNx Films Grown by Plasma Enhanced Atomic Layer Deposition (플라즈마 강화 원자층 증착법에 의한 TaNx 박막의 전기 전도도 조절)

  • Ryu, Sung Yeon;Choi, Byung Joon
    • Korean Journal of Materials Research
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    • v.28 no.4
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    • pp.241-246
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    • 2018
  • $TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

Composting Characteristics of a Continuous Aerated Pilot-scale Reactor Vessel for Commercial Composting (상업용 퇴비화를 위한 연속 통기식 파이로트 규모 반응조의 퇴비화 특성)

  • 홍지형;최병민
    • Journal of Animal Environmental Science
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    • v.4 no.2
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    • pp.149-160
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    • 1998
  • Hog manure slurry amended with sawdust was composted in pilot-scale reactor vessels using continuous aeration nuder different C/N ratios and pH conditions during composting high rate (decomposition) process. For each material two replicated piles were built and monitored over a period of three weeks. The compost piles had an initial volume of 0.18 ㎥. In this study we evaluated the temperature in compost O2 and CO2 evolution, aeration rate, NH3 concentration etc. and investigated the stability of compost during composting high rate process. According to measured results, while the maximum NH3 concentration during composting high rate process. According to measured results, while the maximum NH3 concentration during composting high rate was in the range of 213 to 412 ppm on 5th day which was near the optimum C/N(22∼24) and pH(7.5∼7.9). And then, the NH3 concentration reduced to between 22∼26 ppm by 13th day. The maximum NH3 concentration for the lower C/N(18∼19) and pH value of 6 reached 574∼1,063 ppm by the 16th through 11th days and the NH3 concentration during continuous aerated composting high rate process, it was more important to manage NH3 gas so that compost odor is reduced.

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$NH_3$ Gas Sensor Based on ZnO Nanowires as Sensing Material

  • No, Im-Jun;Sin, Baek-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.378-379
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    • 2012
  • ITO 만큼 높은 전도성과 광학적 투과성을 갖는 Al-doped ZnO (AZO) 박막을 DC-Pulse magnetron sputtering을 이용하여 40 nm 두께로 증착 후 리소그라피 공정을 통해 $30{\mu}m$ 간격으로 패터닝 하였다. 간격 30 ${\mu}m$로 배열된 AZO를 촉매층으로 하는 수열합성법을 리사이클 공정을 반복하여 수행하여 ZnO 나노선을 성장시켰다. 이와 같이 AZO 전극 사이에 길이 $30{\mu}m$의 ZnO 나노선이 래터럴 구조로 연결된 소자의 $NH_3$ 가스감지 특성을 조사하였다. 합성된 나노선의 전기적, 광학적, 구조적인 특성을 분석하여 높은 가스 감지도를 예상할 수 있는 특성을 확인하였다. 제작된 가스센서를 진공 챔버에 설치 후 양 전극간에 동작전압(Operating voltage)을 1 V로 인가하여 고정한 후에 $NH_3$를 주입(Injection)과 퍼지(Purge)를 반복하며 그 주입량(10 ppm, 20 ppm, 40 ppm, 60 ppm)에 변화를 주었고, 그에 따른 전류변화를 관찰하여 $NH_3$ 가스감지특성을 평가하였다.

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A Study on the Flue Gas Mixing for the Performance Improvement of De-NOx plant (배연탈질설비의 성능향상을 휘한 가스혼합에 관한 연구)

  • 류병남
    • Journal of Advanced Marine Engineering and Technology
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    • v.23 no.4
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    • pp.462-472
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    • 1999
  • De-NOx facility using Selective Catalytic Reduction method is the most widely applied one that removes NOx from flue gas emitted from combustion facility such as boiler for power generation engine incinerator etc. Reductant $NH_3\;or\;NH_4OH$ is sprayed into flue gas to convert NOx into $H_2O$ and $N_2.$ Good mixing between flue gas and $NH_3$ is the most important factor to increase reduction in catalytic layer and to reduce unreacted NH3 slip. Therefore the development of mixer device for mixing effect is one of the important part for SCR facility. Objectives of this study are to investigate the relation between flow and concentration field by observation at the wake of delta-wing type mixer. At the first stage qualitative measurement of flow field is conducted by flow visualization using laser light sheet in lab. scale wind tunnel. Also we have conducted the quantitative analysis by comparing flow field measurement using LDV with numerical simulation. On the basis of qualitative and quantitative analysis we investigate the dis-tribution of flow and concentration in flow model facility. The results of an experimental and compu-tational examination of the vortex structures shed from delta wing type vortex generator having $40^{\circ}$ angle of attack are presented, The effects of vortex structure on the gas mixing is discussed, too.

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Growth and Characteristics of TiN Thin Films by Atomic Layer Epitaxy (Atomic Layer Epitaxy 법에 의한 TiN 박막의 성장과 그 특성)

  • 이종화;김동진
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.581-584
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    • 1998
  • TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

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