• 제목/요약/키워드: $MnO_2$doping

검색결과 119건 처리시간 0.02초

Effects of Sr Contents on Structural Change and Electrical Conductivity in Cu-doped LSM ($La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$)

  • 류지승;노태민;김진성;정철원;이희수
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.33.1-33.1
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    • 2011
  • Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

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Effect of $Mg^{2+}$ co-doping on luminescent properties of $ZnGa_2O_4:Mn^{2+}$

  • Singh, Binod Kumar;Bartwal, Kunwar Singh;Ryu, Ho-Jin
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.29-32
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    • 2007
  • Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

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$MnO_2$ 첨가에 따른 Pb($Mg_{1/3}Nb_{2/3}$)$O_3$계 완화형 강유전체에서의 전기적 물성변화 (Effect of $MnO_2$ Addition on the Electric Properties in Pb($Mg_{1/3}Nb_{2/3}$)$O_3$ Relaxor Ferroelectrics)

  • 박재환
    • 한국전기전자재료학회논문지
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    • 제14권7호
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    • pp.562-566
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    • 2001
  • The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.

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직류 전계에 의한 Acceptor 첨가 BaTiO3의 유전특성 열화 현상 (Capacitance Aging Behavior of Acceptor-Doped BaTiO3 under DC Electrical Field)

  • 한동우;한영호
    • 한국세라믹학회지
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    • 제46권2호
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    • pp.219-223
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    • 2009
  • Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.

Sb/Bi비에 따른 5원계 바리스터의 소결거동 및 전기적 특성(I) : ZnO-Bi2O3-Sb2O3-Mn3O4-Cr2O3 (Sintering and Electrical Properties According to Sb/Bi Ratio(I) : ZnO-Bi2O3-Sb2O3-Mn3O4-Cr2O3 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국재료학회지
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    • 제22권12호
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    • pp.675-681
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    • 2012
  • We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

Ga 도핑된 $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn 녹색 형광체의 발광특성 (Photoluminescent Properties of $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn Green Phosphors doped with Ga)

  • 박응석;장호정;조태환
    • 한국재료학회지
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    • 제8권9호
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    • pp.860-864
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    • 1998
  • 고상 반응법에 의해 제조된 $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ 녹색 형광체에 Ga 원소를 치환시켜 소성온도 및 Ga의 첨가량에 따른 발광특성과 결정특성을 조사하였으나, $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ 형광체에 있어서 Ga을 첨가했을 경우가 첨가하지 않은 샘플에 비해 발광특성이 개선되었으며, 8mol%(x=0.08) Ga을 첨가했을 때 발광세기와 색순도에서 가장 우수한 특성을 보였다. $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ 형광체(x=0.08)에 대해서 소성온도를 $1100^{\circ}C$에서 $1400^{\circ}C$로 증가함에 따라 결정성이 개선되었으며 발광강도 역시 약 7배 이상 크게 증가하였다. 잔광시간은 Ga 첨가량에 관계없이 약 24 ms로 거의 변화가 없었다. 입도분석 결과 1-3$\mu\textrm{m}$의 작은 입자가 주로 관찰되었으며 10$\mu\textrm{m}$이상의 큰 응집입자도 소량 존재하였다.

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Yttrium-doped and Conductive Polymer-Coated High Nickel Layered Cathode Material with Enhanced Structural Stability

  • Shin, Ji-Woong;Lee, Seon-Jin;Nam, Yun-Chae;Son, Jong-Tae
    • Journal of Electrochemical Science and Technology
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    • 제12권2호
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    • pp.272-278
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    • 2021
  • In this study, high nickel layered LiNi0.8Co0.1Mn0.1O2 cathode materials for lithium-ion batteries were modified by yttrium doping and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) coating. The effects of yttrium doping and PEDOT:PSS coating on the structural and electrochemical properties of the LiNi0.8Co0.1Mn0.1O2 cathode material were investigated and compared. The substitution of nickel with an electrochemically inert yttrium was confirmed to be successful in stabilizing the layered structure framework. Moreover, coating the surfaces of the LiNi0.8Co0.1Mn0.1O2 particles with a conductive polymer, PEDOT:PSS, improved the capacity retention, thermal stability, and impedance of the cathode material by increasing its ionic and electric conductivities.

고발광 ${Zn_2}{SiO_4}$:Mn 형광체의 제조 및 특성 (Synthesis and Characterization of High Luminance ${Zn_2}{SiO_4}$:Mn Phosphors)

  • 성부용;정하균;박희동;김대수
    • 한국세라믹학회지
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    • 제37권8호
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    • pp.774-780
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    • 2000
  • In order to improve luminescence prperty of phosphors, we have synthesized Zn2SiO4:Mn phosphors by a new chemical synthetic route, i.e., the homogeneous precipitation method. This method has featured that the formation of phosphoris completed at relatively low temperature of 105$0^{\circ}C$ and the particle morphology exhibits spherical shape to be well-dispersed and uniform size. At all the Mn concentration explored, phosphors prepared by this method have exhibited the improved emission intensities. In particular, the emission intensities of phosphors with Mn doping contents between 1 at% and 3.5 at% were higher about 40% than that of commercial phosphor. On the other hand, the decay time has been decreased from 23 ms to 11 ms with increasing Mn concentration. In addition, the phosphor composition containing 3 at% Mn has displayed the most saturated color.

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Al이 첨가된$ZnGa_2$$O_4$:Mn 형광체의 발광특성 (The luminescent characteristics of Al codoped $ZnGa_2$$O_4$:Mn phosphors)

  • 박용규;한정인;곽민기;한종근;주성후
    • E2M - 전기 전자와 첨단 소재
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    • 제10권1호
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    • pp.33-38
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    • 1997
  • The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

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ZnO-Bi2O3-Mn3O4-Co3O4 바리스터의 결함과 전기적 특성 (Defects and Electrical Properties of ZnO-Bi2O3-Mn3O4-Co3O4 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국전기전자재료학회논문지
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    • 제25권12호
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    • pp.961-968
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    • 2012
  • In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).