• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.236-236
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• 1999

AC-PDP(Plasma display Panel)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태등에 영향을 받는다. 본 연구에서는 MgO 보호막을 열처리한 상태와 열처리 하지 않은 상태를 ${\gamma}$-FIB 장치를 이용하여 2차전자방출 계수를 측정하여 비교하였다. 또한 24시간 MgO 보호막을 대기중에 방치하여 두었을 때 MgO 보호막의 표면오염상태에 대한 2차전자방출계수값을 측정하여 MgO 보호막의 표면오염에 대한 방전 전압특성저하가 어느정도인지를 알아보았다. 실험에 사용한 혼합기체는 Ne+Xe, He+Ne+Xe 혼합기체를 사용하였고, MgO 보호막은 21inch 규격의 실제 PDP Panel의 MgO 보호막을 사용하였다.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.67-72
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• 2014

Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties, including high strength, high hardness, excellent ductility and toughness. In this study, nanopowders of $Al_2O_3$, MgO and $TiO_2$ were prepared as starting materials by high energy ball milling for the simultaneous synthesis and sintering of the nanostructured compound $Mg_4Al_2Ti_9O_{25}$ by high-frequency induction heating process. The highly dense nanostructured $Mg_4Al_2Ti_9O_{25}$ compound was produced within one minute by the simultaneous application of 80MPa pressure and induced current. The sintering behavior, grain size and mechanical properties of the $Mg_4Al_2Ti_9O_{25}$ compound were evaluated.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.106-112
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• 2010

In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1485-1487
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• 2002

The 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the 0.96Mg$TiO_3$-0.04Sr$TiO_3$ceramics with $V_2O_5$(5wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature, the grain size was increased and three types of grains were exhibited: larger circular grain, small square grain and lapth-shaped grain. In the case of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $15.24{\sim}18.55$, $22,890{\sim}42,100$GHz, -24.5${\sim}$+2.414ppm/$^{\circ}C$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.92-92
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• 1997

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.330-336
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• 1997

1:1 복합 페로스카이트 물질인 La(Mg1/2Ti1/2)O3 and La(Mg1/2Zr1/2)O3의 양이온 규칙 존재와 고주파 유전특성을 x선 회절과 회로망분석기를 사용하여 조사하였다. 기존의 연구에서는 두 물질 모두 양이온 규칙이 없으며 입방정 구조를 갖는다고 보고되었지만, 본 연구에서의 x선 분석에서는 양이온 규칙을 나타내는 초격자회절선과 비입방정 구조를 의미하는 기본회절선의 split이 발견되었다. 고주파 영역에서의 유전율은 La(Mg1/2Ti1/2)O3의 경우 29,La(Mg1/2Zr1/2)O3는 24, 품질계수(Q*f)는 각각 73000, 49000이다. 공진주파수 온도계수는 La(Mg1/2Ti1/2)O3의 경우 - 65ppm/$^{\circ}$C,La(Mg1/2Zr1/2)O3는 -80ppm/$^{\circ}$C로 음의 값을 가진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.420-420
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• 2010

AC PDP에서 유전체 보호막으로 사용되는 MgO 박막은 높은 이차전자방출계수($\gamma$)로 인해 방전전압을 낮춰주는 중요한 역할을 하고 있다. 이러한 MgO 보호막의 이차전자방출계수를 증가시키기 위해 MgO 의 Energy Band Structure 규명이 중요한 연구 주제가 되고 있다. MgO의 이차전자방출계수($\gamma$)는 Auger 중화 이론에 의해 방출 메커니즘이 설명이 되고, 그 원리는 다음과 같다. 고유의 이온화 에너지를 가진 이온이 MgO 표면에 입사 되면, Tunneling Effect에 의해 전자와 이온 사이에 중화가 일어나고, 중화가 되고 남은 에너지가 MgO Valance Band 내의 전자에게 전달되면 이때 남은 에너지(${\Delta}E$)가 MgO의 일함수(Work function) 보다 크게 되면 이차전자로 방출된다. 본 실험 에서는 $\gamma$-FIB System을 이용하여 결정 방향이 (100), (110), (111)을 갖는 Single Crystal MgO에 이온화 에너지가 24.58eV인 He Ion source를 주사 하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 MgO 내의 Energy Band Structure를 실험적으로 측정하였다. 이를 통해 MgO Single Crystal의 일함수 및 Defect Level의 분포를 확인하였다.

• Journal of Powder Materials
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• v.24 no.5
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• pp.364-369
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• 2017

Ceramic powder, such as MgO, is added as a binder to prepare the green compacts of molten salts of an electrolyte for a thermal battery. Despite the addition of a binder, when the thickness of the electrolyte decreases to improve the battery performance, the problem with the unintentional short circuit between the anode and cathode still remains. To improve the current powder molding method, a new type of electrolyte separator with porous MgO preforms is prepared and characteristics of the thermal battery are evaluated. A Spherical PMMA polymer powder is added as a pore-forming agent in the MgO powder, and an organic binder is used to prepare slurry appropriate for tape casting. A porous MgO preform with $300{\mu}m$ thickness is prepared through a binder burnout and sintering process. The particle size of the starting MgO powder has an effect, not on the porosity of the porous MgO preform, but on the battery characteristics. The porosity of the porous MgO preforms is controlled from 60 to 75% using a pore-forming agent. The batteries prepared using various porosities of preforms show a performance equal to or higher than that of the pellet-shaped battery prepared by the conventional powder molding method.

• Carbon letters
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• v.24
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• pp.82-89
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• 2017

In this study, composite PAN-based ACNFs embedded with MgO and $MnO_2$ were prepared by the electrospinning method. The resultant pristine ACNFs, ACNF/MgO and $ACNF/MnO_2$ were characterized in terms of their morphological changes, SSA, crystallinity and functional group with FESEM-EDX, the BET method, XRD and FTIR analysis, respectively. Results from this study showed that the SSA of the ACNF/MgO composite ($1893m^2g^{-1}$) is significantly higher than that of the pristine ACNFs and $ACNF/MnO_2$ which is 478 and $430m^2g^{-1}$, respectively. FTIR analysis showed peaks of 476 and $547cm^{-1}$, indicating the presence of MgO and $MnO_2$, respectively. The FESEM micrographs analysis showed a smooth but coarser structure in all the ACNFs. Meanwhile, the ACNF/MgO has the smallest fiber diameter ($314.38{\pm}62.42nm$) compared to other ACNFs. The presence of MgO and $MnO_2$ inside the ACNFs was also confirmed with EDX analysis as well as XRD. The adsorption capacities of each ACNF toward $CH_4$ were tested with the volumetric adsorption method in which the ACNF/MgO exhibited the highest $CH_4$ adsorption up to $2.39mmol\;g^{-1}$. Meanwhile, all the ACNF samples followed the pseudo-second order kinetic model with a $R^2$ up to 0.9996.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.697-700
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• 2011

Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.