• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.151-151
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• 2003

열화학기상증착법(Thermal-CVD)을 이용하여 SOI(snilicon-on-insulator)기판과 실리콘기판 상에 단결정 3C-SiC 이종박막을 동시에 성장하고, 그 특성을 비교 분석하였다. 결정성 평가로는 X-선 회절(XRD)분석과 Raman 산란 분광분석, 그리고 투과전자현미경을 이용하였고, 잔류 웅력 비교 분석으로는 laser scanning 방법 과 Raman 산란 분광분석의 3C-SiC LO peak의 위치변화, 그리고 X-선 회절분석의 3C-SiC(004) peak의 위치변화를 이용하였다. 그 결과 SOI 기판과 실리콘 기판상에 고품위의 단결정 3C-SiC 박막이 성장됨을 확인하였고, SOI 기판을 사용한 경우 실리콘 기판에 비해 성장된 3C-SiC 이종박막의 잔류 응력이 실제로 감소됨을 확인하였다.

• Animal Bioscience
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• v.34 no.7
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• pp.1210-1220
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• 2021

Objective: Unlike mammals, goose fatty liver shows a strong tolerance to fatty acids without obvious injury. Stearyl-coenzyme A desaturase 1 (SCD1) serves crucial role in desaturation of saturated fatty acids (SAFs), but its role in the SAFs tolerance of goose hepatocytes has not been reported. This study was conducted to explore the role of SCD1 in regulating palmitic acid (PA) tolerance of goose primary hepatocytes. Methods: 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide was examined to reflect the effect of PA on hepatocytes viability, and quantitative polymerase chain reaction was used to detect the mRNA levels of several genes related to endoplasmic reticulum (ER) stress, inflammation, and apoptosis, and the role of SCD1 in PA tolerance of goose hepatocytes was explored using RNA interfere. Results: Our results indicated that goose hepatocytes exhibited a higher tolerant capacity to PA than human hepatic cell line (LO2 cells). In goose primary hepatocytes, the mRNA levels of fatty acid desaturation-related genes (SCD1 and fatty acid desaturase 2) and fatty acid elongate enzyme-related gene (elongase of very long chain fatty acids 6) were significantly upregulated with 0.6 mM PA treatment. However, in LO2 cells, expression of ER stress-related genes (x box-binding protein, binding immunoglobulin protein, and activating transcription factor 6), inflammatory response-related genes (interleukin-6 [IL-6], interleukin-1β [IL-1β], and interferon-γ) and apoptosis-related genes (bcl-2-associated X protein, b-cell lymphoma 2, Caspase-3, and Caspase-9) was significantly enhanced with 0.6 mM PA treatment. Additionally, small interfering RNA (siRNA) mediated downregulation of SCD1 significantly reduced the PA tolerance of goose primary hepatocytes under the treatment of 0.6 mM PA; meanwhile, the mRNA levels of inflammatory-related genes (IL-6 and IL-1β) and several key genes involved in the phosphoinositide 3-kinase (PI3K)/protein kinase B (AKT), forkhead box O1 (FoxO1), mammalian target of rapamycin and AMPK pathways (AKT1, AKT2, FoxO1, and sirtuin 1), as well as the protein expression of cytochrome C and the apoptosis rate were upregulated. Conclusion: In conclusion, our data suggested that SCD1 was involved in enhancing the PA tolerance of goose primary hepatocytes by regulating inflammation- and apoptosis-related genes expression.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.712-718
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• 2003

The effects of nitrogen ion implantation on vacuum evaporated cadmium sulphide (CdS) thin films were investigated by X-ray diffraction, optical transmittance spectra, and Raman scattering studies. The as-deposited CdS films have a hexagonal structure with preferential (0 0 2) orientation. Formation of Cd metallic clusters was observed in ion implanted films from the XRD patterns. The band gap of N+ implanted films decreased, whereas the optical absorption coefficient values increased with the increase of implantation dose. The Raman peak position appeared at 299 cm-1 and the FWHM increased with the ion dose. A decrease in the area of Raman peak of CdS Al(LO) mode is seen on implantation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Journal of Magnetics
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• v.8 no.1
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• pp.1-6
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• 2003

The new class of $Gd_5(Si_xGe_{1-x})_4$ compounds undergoes a simultaneous magnetic/structural phase transition giving a high level of strain that can be induced either by change in temperature or by application of a magnetic field. Profound changes of structural, magnetic, and electronic changes occur in the $Gd_5(Si_xGe_{1-x})_4$ system lead to extreme behavior of the material such as the giant magnetocaloric effect, colossal magnetostriction, and giant magnetoresistance. These unique material characters can be utilized for various applications including magnetic solid refrigerants, sensors, and actuators.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Journal of the Korean Society for information Management
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• v.17 no.4
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• pp.137-155
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• 2000

The purpose of ihis study 1s lo prov~de gu~delme or webslle deslgn for utilization of academic library websile. The evaluauon criteria of wcb resource and the design c~ileria of library websile are reviewed, and analysis criteria for tllis study x e selected 23 wcbsilcs of academic library are selected and analyzed for h e view 01 authorily, rnformat~on content, fui~diou, and design There arc several problems in menu systcm, casiness of access, and design. The result 01 ihis study suggesls the guideline ior design of academic librlvy wcbsile.

• Journal of the Korean Statistical Society
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• v.25 no.3
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• pp.347-358
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• 1996

A new test for goodness-of-fit is presented. It is a modification of a test of LaRiccia (1991). These tests are applicable to continuous lo-cation/scale models. The new test statistic is based on a few selected order statistics taken from the sample, while the LaRiccia test is based directly on the full sample. Each test embeds the hypothesized model in a larger linear model and proceeds to test the goodness-of-fit hy-pothesis by testing the coefficients of this linear model appropriately. The general theory is presented. The tests are compared via computer simulation to a related test of Ali and Umbach (1989) for distributions that could be used as lifetime models. An important aspect of all these tests is that only standard $X_2$ tables are used. Selection of the spacings of the order statistics is discussed.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2019.06a
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• pp.178-181
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• 2019

포인트 클라우드 콘텐츠는 3D 포인트 집합으로 이루어진 3D 데이터로, 일반적으로 3D 포인트 클라우드는 하나의 객체를 표현하기 위하여 수십, 수백만 개의 3차원 포인트(Point) 데이터가 필요하며, 각 포인트 데이터는 3차원 좌표계의 (x, y, z)좌표와 포인트의 색(color), 반사율(reflectance), 법선벡터(normal) 등과 같은 속성(attribute)으로 구성되어 있다. 따라서 기존 2D영상보다 한 단계 높은 차원과 다양한 속성으로 구성된 포인트 클라우드를 사용자에게 제공하기 위해서는 고효율의 인코딩/디코딩 기술 연구가 필요하며, 다양한 대역폭, 장치 및 관심 영역에 따라 차별화된 서비스를 제공하기 위한 품질 확장성 기능의 개발이 요구된다. 이에 본 논문에서는 포인트 클라우드 압축에 사용되는 V-PCC에서 3차원 미디어인 포인트 클라우드의 3D 공간 내 포인트 간의 밀도를 변경하여, 새로운 품질 변화를 달성하고 비트전송률 변경을 추가 지원하는 방법을 제시하였다.