• 제목/요약/키워드: $K^+$ ion source

검색결과 633건 처리시간 0.03초

Characterization of SiC/C Nanocomposite Powders Synthesized by Arc-Discharge

  • Zhou, Lei;Yu, Jie Yi;Gao, Jian;Wang, Dong Xing;Gan, Xiao Rong;Xue, Fang Hong;Huang, Hao;Dong, Xing Long
    • Applied Microscopy
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    • 제45권4호
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    • pp.242-248
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    • 2015
  • In this paper, three carbon sources, i.e., solid graphite, gaseous CH4 and liquid ethanol, and one solid silicon source were employed to synthesize SiC/C nanocomposite powders by arc-discharge plasma. The processing conditions such as the component ratios of raw materials, atmospheric gases, etc. were adjusted for controllable synthesis of the nanopowders. It is indicated that both of solid graphite and silicon can be co-evaporated and reacted to form nanophases of cubic ${\beta}$-SiC with ~50 nm in mean size and a little free graphite; the carbon atoms decomposed from gaseous $CH_4$ favor to combine with the evaporated silicon atoms to form the dominant SiC nanophase; liquid carbon source of ethanol can also be used to harvest the main ${\beta}$-SiC and minor 6H-SiC phases in the assembly of nanoparticles. The as-prepared SiC/C nanocomposite powders were further purified by a heat-treatment in air and their photocatalytic performances were then greatly improved.

LC/TSP/MS에 의한 이온종들의 생성에 관한 연구 (The Study of Generation of Adduct and Fragment Ions by LC/TSP/MS)

  • 김연제
    • 분석과학
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    • 제9권1호
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    • pp.1-12
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    • 1996
  • 열에 불안정하면서 -OH기를 함유하는 미지의 화합물은 LC/TSP/MS에서 [${MNH_4}^+$] 이온, [$MH^+$] 이온, 그리고 [$MH^+-OH$] 이온의 생성이 가능하며, 이들 이온의 m/z값의 차이가 17로서 같기 때문에 이들의 생성 정도에 따라 분자량 추정에 혼란이 일어날 수가 있었다. 따라서 다른 보완 가능한 실험결과가 요구되며 $CF_3COOD+NH_4OH$ 이온화 용액을 사용하여 그 유용성을 검토하였다. 또한 LC/TSP/MS에서 생성되는 토막이온들이 필라멘트의 전자살에 의해 생성되는 것인지 아니면 다른 어떤 생성기전이 존재하는지를 검토하였다.

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Fragmentation Behavior Studies of Chalcones Employing Direct Analysis in Real Time (DART)

  • Motiur Rahman, A.F.M.;Attwa, Mohamed W.;Ahmad, Pervez;Baseeruddin, Mohammad;Kadi, Adnan A.
    • Mass Spectrometry Letters
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    • 제4권2호
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    • pp.30-33
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    • 2013
  • Chalcones are naturally occurring, biologically active molecules generating interest from a wide range of research applications including synthetic methodology development, biological activity investigation and studying fragmentation patterns. In this article, a series of chalcones has been synthesized and their fragmentation behavior was studied using modern ambient ionization technique Direct Analysis in Real Time (DART). DART ion source connected with an ion trap mass spectrometer was used for the fragmentation of various substituted chalcones. The chalcones were introduced to the DART source using a glass capillary without sample preparation step. All the chalcones showed prominent molecular ion peaks $[M]^{{\cdot}+}$ corresponding to the structures. Multistage mass spectral data $MS^n$ ($MS^2$ and $MS^3$) were collected for all the chalcones studied. The chalcones with substitutions at 3, 4 or 5 positions gave product ion peaks with the loss of a phenyl radical ($Ph^{\cdot}$) by radical initiated ${\alpha}$-cleavage, while substitution at 2 position of chalcone in the A-ring gave a product ion peak with the loss of substituted styryl radical (PhCH = $CH^{\cdot}$). In case of the chalcones with the substituent at 4 positions in A and B rings gave both types of fragmentation patterns. In conclusion, chalcones can be easily characterized using modern DART interface in very short time and efficiently without any cumbersome sample pretreatment.

Characteristics of electric field in the liquid metal ion source with a suppressor

  • Min, Boo-Ki;Cho, Byeong-Seong;Oh, Hyun-Joo;Kang, Seung-Oun;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.283-283
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    • 2010
  • The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness and low ion energy spread. Most FIB systems use LMIS because the ion beam spot size of LMIS is smaller than other ion sources. LMIS is basically emitted by an extractor but the new electrode called the suppressor is able to control the emission current. We investigated characteristics LMIS with a suppressor, the function of the suppressor in LMIS, the change of the electric field by the suppressor and the advantages of using the suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). The emission current increases as the suppressor voltage decreases because the suppressor voltage which restrains the electric field goes down, The threshold voltage increases as the suppressor voltage increases. We can explain characteristics and functions of LMIS with a suppressor using the electric field.

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NDLC박막에 DuoPIGatron 이온소스를 사용한 IPS cell의 전기광학특성 (Electro-Optical Performances of In plane Switching(IPS) Cell on the Inorganic Thin Film by DuoPIGatron Ion Source)

  • 김상훈;김종환;강동훈;김영환;황정연;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.453-454
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    • 2006
  • We studied the nematic liquid crystal (NLC) alignment capability by the IB(Ion bean) alignment method on a NDLC(Nitrogen Diamond Like Carbon) as a-C:H thin film. and investigated electro-optical performances of the IBaligned IPS(In plane switching)cell with NDLC surface. A good LC alignment by IB exposure on a NDLC surface was achieved. Monodomain alignment of the IB aligned IPS cell can be observed. The goodelectro-optical (EO) characteristics of the IB aligned IPS cell was observed with oblique IBexposure on the NDLC as a-C:H thin film for 1 min.

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소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화 (Influence of Dose on the Property of Cobalt Silicides in Source/Drain Area)

  • 정성희;송오성;김민성
    • 한국재료학회지
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    • 제13권1호
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    • pp.43-47
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    • 2003
  • As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{+}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{+}$ , while little variation was observed in $CoSi_2$$p^{+}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{+}$ / and $CoSi_2$/$p^{+}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

Characteristics of Polymer irradiated by Low energy Ion Beam

  • sung Han;Yoon, Ki-Hyun;Jung, Hyung-Jin;Koh, Seok-Keun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.109-109
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    • 1999
  • Recently, low energy ion beam irradiation has been adopted for surface modification. Low energy ion beam irradiation has many advantages in polymer engineering such as weak damage, good adhesion, noticeably-enhanced wettability(less than 15 degree), good reproducibility and so on. In this experiment, chemical reactions between free radicals and environment gas species have been investigated using angle-resolved XPS and TRIM code. In the case of low ion beam energy (around 1 keV), energy loss in polymer is mainly originated from atomic collisions instead of electronic interference. Atomic collisions could generated displaced atoms and free radicals. Cold cathode-ion source equipped with 5cm convex grid was used in an O2 environment. Base and working pressure were 5$\times$10-6 and 2.3$\times$10-4 Torr. Flow rates of argon and oxygen were fixed at 1.2 and 8 sccm. target materials are polyethylene polyvinyidenefluoride and polytetrafluoroethylene.

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금속이온 주입기에서의 Co 이온의 인출 특성 연구 (The Characteristic Study on the Extraction of a Co Ion in the Metal Ion Implanter)

  • 이화련;홍인석;티투안;조용섭
    • 한국진공학회지
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    • 제18권3호
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    • pp.236-243
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    • 2009
  • 양성자기반공학기술개발사업단에서는 설치된 금속이온주입기를 이용하여 금속이온의 인출 시험 중에 있으며 120keV의 금속 이온주입이 가능하다. 현재 코발트 이온 주입의 타당성 확인을 위한 특성시험을 수행하고 있다. 이온원에 알루미나 도가니를 설치하여 분말 코발트 염화물을 고온($648^{\circ}C$) 가열에 의한 증기화로 인하여 플라즈마 방전이 되도록 하였다. 아크전압 120V, EHC 출력 250W에서 코발트 이온을 인출하기 위한 플라즈마를 발생하고 유지할 수 있었다. 코발트 이온 빔 전류는 플라즈마 내 아크전류에 의존하였으며 0.18A일 때 최대 빔전류 $100{\mu}A$를 얻을 수 있었다. 질량분리전자석에 의해서 $Co^+$$CoCl^+$, $Cl^+$ 이온의 첨두 빔 전류 비율을 확인하였고 전체 이온 대비 $Co^+$ 이온의 비율이 70% 수준을 유지함을 알 수 있었다. $Co^+$ 이온을 알루미늄 시료에 빔전류 $10{\mu}A$, 90분 동안 이온주입 하여 RBS(Rutherford Backscattering Spectrometry)분석법으로 $1.74{\times}10^{17}#/cm^2$의 이온량을 확인하였다.

The Study of the Charge Transport on the Surface Layer of the Patterned Vertical Alignment(PVA) Mode

  • Choi, Nak-Cho;You, Jae-Yong;Jung, Ji-Young;Rhie, Kung-Won;Shin, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.571-573
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    • 2007
  • It is known that the main source of the area image sticking is the ion charge adsorption on the alignment layer. We found out that the adsorption of the ion charge of the liquid crystal in the cell was physisorption, which takes place between all molecules on any surface providing the adsorption force is small.

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Characteristics of electric field in the liquid metal ion source with a suppressor

  • Cho, Byeong-Seong;Oh, Hyun-Joo;Song, Ki-Baek;Kang, Seung-Oun;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.88-88
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    • 2010
  • The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness, and low ion energy spread. Most FIB systems use LMIS because the beam spot size of LMIS is smaller than of gas field ionization sources(GFIS). LMIS basically consists of a emitter(needle, anode), a reservoir(gallium) and a extractor(cathode). But several LMIS have new electrode called the suppressor. We investigated characteristics of LMIS with a suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). We can explain characteristics of LMIS with a suppressor using the electric field.

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