• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.760-763
• /
• 2002

Nanoparticle size of Titanium dioxide thin films was prepared by novel method. Particle size and surface structure of $TiO_2$ thin films were investigated by atomic force microscopy(AFM), scanning electron microscopy(SEM). All thin films process were prepared at room temperature. Particle size was reduced from 100 to 30nm with increasing amount of $Ti[OCH(CH_3)_2]_4$ observed by AFM images. All thin films were irradiated for 5 minutes by white light. Increasing the annealing temperature, particles size was increased. In the $TiO_2$(40%) thin films was annealed at $300^{\circ}C$ for 30minutes, the particle size was about 10nm.

• Journal of the Korean Vacuum Society
• /
• v.6 no.1
• /
• pp.69-76
• /
• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.7
• /
• pp.304-307
• /
• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Journal of Sensor Science and Technology
• /
• v.24 no.6
• /
• pp.404-411
• /
• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• ETRI Journal
• /
• v.34 no.5
• /
• pp.779-782
• /
• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• Solar Energy
• /
• v.10 no.3
• /
• pp.53-59
• /
• 1990

[ $CdSe_xTe_{1-x}$ ] ($0{\le}x{\le}1$) thin films were deposited cathodically on Ti substrates in aqueous sulfric acid solution containing 1M $CdSO_4$ and 1mM$(TeO_2+SeO_2)$. The limiting current was observed in deposition potential ranging from -0.20 to -0.65 vs.Ag/AgCl ; although its value has changed a little depending on the mole ratio x, the limiting current was almost constant in deposition potential of -0.45V in spite of the change of mole ratio x. The crystal structure of the $CdSe_xTe_{1-x}$ thin films was cubic zinc-blonde in the range of mole ratio $x=0{\sim}0.8$, and hexagonal wurtzite in the mole ratio x=1 When the mole ratio changed from x=0 to x=0.8, diffraction peaks was shifted to the larger diffraction angle.

• Progress in Superconductivity
• /
• v.13 no.2
• /
• pp.117-121
• /
• 2011

We have fabricated $FeSe_x$ superconducting thin films at much different substrate temperatures of 430 and $610^{\circ}C$ on $Al_2O_3$(0001) substrates by using a pulsed laser deposition (PLD) technique. Superconducting transitions for both films were shown around 10 K, but their transition width and growth directions of grains were different. We found that superconducting tetragonal FeSe phases and non-superconducting hexagonal FeSe phases were coexisted in the sample grown at the low temperature of $430^{\circ}C$, whereas the hexagonal FeSe phase was decreased with increasing fabrication temperatures.

• Journal of the Korean Electrochemical Society
• /
• v.13 no.2
• /
• pp.89-95
• /
• 2010

The chalcopyrite $Cu(In_xGa_{(1-x)})Se_2$ (CIGS) is considered to be one of the effective light-absorbing materials for thin film photovoltaic solar cells. We describe the electrodeposition of CIGS thin films in ambient laboratory conditions, and suggest the electrochemical conditions to prepare stoichiometric CIGS thin films of Ga/(In + Ga) = 0.3. In acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$ and $Se^{4+}$ ions, the CIGS films of different Cu/In/Ga/Se chemical compositions were electrodeposited onto Mo/Glass substrate. The structure, morphology and chemical composition of electrodeposited CIGS films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), and Energy dispersive X-ray spectroscopy (EDS), respectively.

• Applied Chemistry for Engineering
• /
• v.28 no.3
• /
• pp.290-293
• /
• 2017

In this study, the fundamental behavior of microdomains in block copolymer/nanoparticle composite thin films was examined. In this experiment, polystyrene-b-poly(2-vinylpyridine) block copolymer and CdSe nanoparticles having a noncentrosymmetric property were employed. Composite hybrid thin films were produced by a spin coating method, and changes in the internal structure of composite thin films were monitored mainly by transmission electron microscopy. In summary, nanoparticles resided inside the thin film relatively intact, however, the block copolymer microdomains rotated parallel to the electric field direction. This study will be very helpful for future research activities regarding behaviors of heterogeneous composite materials under external fields.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.7
• /
• pp.1985-1988
• /
• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.